I-Silicon Carbide egqunywe ngeGraphite Substrate yeSemiconductor, i-MOCVD Susceptor

I-Silicon Carbide Coated Graphite Substrate yeSemiconductor, i-MOCVD Susceptor Umfanekiso obonakalayo

Inkcazelo emfutshane:

I-VET Energy SiC Coated Susceptor yimveliso ephezulu yokusebenza eyilelwe ukubonelela ngokusebenza okungaguquguqukiyo nokuthembekileyo kwithuba elide. Inokumelana nobushushu obuhle kakhulu kunye nokufana kwe-thermal, ukucoceka okuphezulu, ukuxhathisa ukhukuliseko, kuyenza ibe sisisombululo esifanelekileyo sokusetyenzwa kwe-wafer.

Indawo yemvelaphi:E-Zhejiang, eTshayina (eMaphandleni)

Inombolo yoMfanekiso:Inombolo yoMfanekiso:

Ukuqulunqwa kwemichiza:I-SiC eqatywe igraphite

Amandla e-Flexural:470Mpa

I-Thermal conductivity:300 W/mK

Umgangatho:Igqibelele

Umsebenzi:CVD-SiC

Isicelo:Semiconductor / Photovoltaic

Ubuninzi:3.21 g/cc

Ukwandiswa kweThermal:4 10-6/K

Uthuthu: <5ppm

Isampulu:Iyafumaneka

Ikhowudi ye-HS:6903100000

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-VET Energy SiC Coated Susceptorsisisombululo esisebenza ngokuphezulu esenziwe ngobuchule ukunikezela ukusebenza okuthembekileyo, okungaguquguqukiyo kubo bonke ubomi obandisiweyo, ukuhlangabezana neemfuno eziqatha zokwenziwa kwesemiconductor. Ibandakanya ukumelana nobushushu obukhethekileyo, ukufana okuphezulu kwe-thermal, kunye nokucoceka okuphezulu, le mveliso ilungele abathwali be-MOCVD wafer kunye nezinye izicelo zokusetyenzwa kwe-wafer ezifuna uzinzo kunye nokuchaneka. Ukumelana kwayo nokukhukuliseka okuqinileyo kuyenza ibe lukhetho lweprimiyamu kwindawo apho ukuqina kunye nokuqina kweekhemikhali kubalulekile.

YethuI-SiC Coated Graphite Susceptorimi njengenxalenye ebalulekileyo kwinkqubo yokwenziwa kwe-semiconductor, ukusebenzisa iteknoloji eyodwa ye-VET Energy enelungelo elilodwa lomenzi wechiza ukuphumeza ubunyulu obuphezulu ngokugqithisileyo, ukufana okuphezulu kokwambathisa, kunye nozinzo olumangalisayo lobushushu. I-coating iphakamisa i-graphite substrate kunye nokuchasana kweekhemikhali eziphezulu kunye nobomi obuninzi benkonzo. Ukuzinikezela kwe-VET Energy kumgangatho kubangele i-susceptor egqunywe nge-SiC ehlangabezana neemfuno eziguquguqukayo zemarike ye-graphite wafer carrier, ibeka umgangatho ophezulu we-SiC-coated graphite susceptors ezisetyenziswaIinkqubo ze-MOCVD.

Iimpawu eziphambili zee-SiC Coated Susceptors:

1. Ukumelana ne-Oxidation yobushushu obuphezulu:Imelana namaqondo obushushu ukuya kuthi ga kwi-1700℃, iyenza ilungele iimeko zokusetyenzwa kakhulu.

2. Ukucoceka okuphezulu kunye nokuFaniswa kweThermal:Uqinisekisa iziphumo ezifanayo, kubalulekileI-MOCVD susceptorskunye nezinye izicelo ezichanekileyo.

3. Ukuxhathisa okugqwesileyo kokuCorrosion:Ukumelana ne-asidi, i-alkali, ityuwa, kunye nee-reagents ezahlukeneyo zezinto eziphilayo.

4. Ubulukhuni boMphezulu obongezelelweyo:Umphezulu obambeneyo onamasuntswana amahle anika ukuqina okuphezulu kunye nobomi obude.

5. Ubomi Benkonzo Eyandisiweyo:Yenzelwe ukusebenza okuzinzileyo, ukugqwesa i-silicon carbide-coated-coated susceptors kwiindawo ezinzima zokusetyenzwa.

Njengomvelisi ohamba phambili, iVET Energy igxile kwigraphite elungiselelweyo kunyeiimveliso ze-silicon carbidengeendlela ezahlukeneyo zokwaleka, kuqukaUkwaleka kweSiC, TaC ukutyabeka, iglasi ikhabhoni ukutyabeka, kunye ne-pyrolytic carbon coating. Ngokuzingca sikhonza i-semiconductor kunye ne-photovoltaic amashishini, sihambisa i-silicon carbide coated graphite susceptors ezihlangabezana neemfuno ezithile zokusebenza.

Iqela lethu lobuchwephesha, elinamava avela kumaziko aphezulu ophando lwasekhaya, lizinikele ekuqhubeleni phambili izisombululo zemathiriyeli kwiimfuno eziphuhlayo zeI-SiC-coated graphite susceptorimarike. Ngenkqubo yethu enelungelo lobunikazi, i-VET Energy iphuhlise iteknoloji ekhethekileyo ephucula kakhulu amandla ebhondi phakathi kwe-silicon carbide coating kunye ne-substrate, ukunciphisa umngcipheko wokutshatyalaliswa kunye nokuphucula ukuthembeka kwexesha elide.

Izicelo kunye nezinto eziluncedo kwiSemiconductor Processing

ISiC ukutyabeka for MOCVDyenzai-graphite susceptorAmacandelo okugcina ingqibelelo phantsi kobushushu obuphezulu kunye nemekobume eyonakalisayo, ebaluleke kakhulu kwimveliso ye-semiconductor echanekileyo. La malungu egraphite agqunywe nge-SiC axatyiswe ngokukodwa kwiinkqubo ezifuna i-silicon carbide-coated susceptorsabathwali be-graphite wafer, efuna ukuzinza okuphezulu kwe-thermal, ukucoceka, kunye nokuchasana nokukhukuliseka kweekhemikhali.

Ngobuchule bethu obuphambili bokugquma be-silicon carbide, iVET Amandla iyaqhubeka nokuxhasa imakethi ye-graphite wafer carrier ngokuzisa ngokwezifiso, ukusebenza okuphezulu.I-SiC-coated graphite susceptorsezijongana nemingeni ethile kwishishini, ukusuka kwiinkqubo ze-MOCVD ukuya kwizicelo ezicocekileyo kakhulu kwintsimi ye-semiconductor.