Silicon Carbide SSIC RBSIC SiC Tube Silicon Tube

Inkcazelo emfutshane:

I-silicon carbide engenaxinzelelo (SSIC)iveliswa kusetyenziswa umgubo we-SiC ocolekileyo kakhulu oqulethe izongezo ze-sintering. Icutshungulwa kusetyenziswa iindlela zokubumba eziqhelekileyo kwezinye iiseramics kwaye i-sintered kwi-2,000 ukuya kwi-2,200 ° C kwi-atmosphere ye-inert yegesi.Kwakunye neenguqulelo ezicokisekileyo, ezinobukhulu obuziinkozo <5 um, iinguqulelo ze-coarse-grained kunye nobukhulu beenkozo ukuya kwi-1.5. mm ziyafumaneka


Iinkcukacha zeMveliso

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Silicon Carbide SSIC RBSIC SiC Tube Umbhobho weSilicon

I-silicon carbide engenaxinzelelo (SSIC)iveliswa kusetyenziswa umgubo we-SiC ocolekileyo kakhulu oqulethe izongezo ze-sintering. Icutshungulwa kusetyenziswa iindlela zokubumba eziqhelekileyo kwezinye iiseramics kwaye i-sintered kwi-2,000 ukuya kwi-2,200 ° C kwi-atmosphere ye-inert yegesi.Kwakunye neenguqulelo ezicokisekileyo, ezinobukhulu obuziinkozo <5 um, iinguqulelo ze-coarse-grained kunye nobukhulu beenkozo ukuya kwi-1.5. mm ziyafumaneka.

I-SSIC yohlulwa ngamandla aphezulu ahlala phantse ngokuthe rhoqo ukuya kumaqondo obushushu aphezulu kakhulu (malunga ne-1,600° C), egcina loo mandla ixesha elide!

 

Iinzuzo zemveliso:

Ukumelana ne-oxidation yobushushu obuphezulu

Uxhathiso olugqwesileyo lweCorrosion

Ukuxhathisa okulungileyo kweAbrasion

I-coefficient ephezulu yokushisa ukushisa
Ukuzithambisa, ukuxinana okuphantsi
Ukuqina okuphezulu
Uyilo olulungiselelweyo.

 

Iimpawu zobugcisa:

Izinto Iyunithi Idatha
Ukuqina HS ≥110
Inqanaba le-Porosity % <0.3
Ukuxinana g/cm3 3.10-3.15
Ukucinezela MPa >2200
Ukomelela Kweqhekeza MPa >350
I-Coefficient yokwandiswa 10/°C 4.0
Umxholo weSic % ≥99
I-Thermal conductivity W/mk >120
Imodyuli ye-elastic GPA ≥400
Ubushushu °C 1380

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Silicon Carbide SSIC RBSIC SiC Tube Silicon Tube

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Silicon Carbide SSIC RBSIC SiC Tube Silicon Tube


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