CVD sic coating cc intonga edibeneyo, isilicon carbide carbon-carbon composite intonga, Sic coated cc intonga edibeneyo

Inkcazelo emfutshane:


Iinkcukacha zeMveliso

Iithegi zeMveliso

Ingcaciso yeMveliso

ICVD SiC CoatingI-CC Composite Rod,ISilicon yeCarbide yeCarbon-Carbon Composite Rod, I-SiC Coated CC Composite Rod evela kwi-vet-china idibanisa iimpawu ezikhethekileyo zecarbon-carbon (CC) imidibanisongesikhuseloI-CVD SiC (iSilicon Carbide) yokugquma. Le ntonga ephucukileyo yenzelwe usetyenziso oluphezulu olufuna ukuzinza okuphezulu kwe-thermal, amandla omatshini, kunye nokuxhathisa imichiza. I-carbon-carbon core ibonelela ngokuqina okugqwesileyo kunye neempawu ezikhaphukhaphu, ngelixa i-SiC coating ikhulisa ukuxhathisa ukunxiba, i-oxidation, kunye namaqondo obushushu aphezulu.

I-coating ye-CVD SiC inikeza ukhuseleko oluqinileyo, oluvumela intonga ukuba imelane neemeko ezinzima, iyenze ilungele ukuveliswa kwe-semiconductor, i-aerospace, kunye neenkqubo zoshishino. i-vet-china iqinisekisa ukubaCVD SiC CoatingI-CC Composite Rod inokusingatha amaqondo okushisa angaphezu kwe-1600 ° C, inika ukuthembeka kwiindawo ezifuna ukuchaneka kunye nokuphila ixesha elide.

Intonga edibeneyo ye-vet-china yenzelwe ukwenza kwiimeko ezinzima kakhulu, ukuqinisekisa ukuzinza kunye nokwandisa ixesha lokuphila kwamacandelo kumashishini afuna kakhulu. Indibaniselwano ye-CVD SiC yokugquma kunye nolwakhiwo oluhlanganisiweyo lweCC lukhokelela kwimveliso engekhaphukhaphu kuphela kodwa eyomelele kakhulu kwaye ixhathise ukunxitywa nokukrazuka.

 Ukusetyenzwa kwe-SiC yokwambathisa kumphezulu wegraphite MOCVD susceptors

Iimpawu eziphambili:

1. Ukumelana nobushushu obuphezulu be-oxidation:

Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.

2. Ukucoceka okuphezulu: okwenziwe nge-chemical vapour deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.

3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.

4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye nee-reagents eziphilayo.

 

IiNgcaciso eziPhambili ze-CVD-SIC yoMtyaliso:

SiC-CVD

Ukuxinana

(g/cc)

3.21

Amandla e-Flexural

(Mpa)

470

Ukwandiswa kweThermal

(10-6/K)

4

I-Thermal conductivity

(W/mK)

300

Imifanekiso eneenkcukacha

Ukusetyenzwa kwe-SiC yokwambathisa kumphezulu wegraphite MOCVD susceptorsUkusetyenzwa kwe-SiC yokwambathisa kumphezulu wegraphite MOCVD susceptorsUkusetyenzwa kwe-SiC yokwambathisa kumphezulu wegraphite MOCVD susceptorsUkusetyenzwa kwe-SiC yokwambathisa kumphezulu wegraphite MOCVD susceptorsUkusetyenzwa kwe-SiC yokwambathisa kumphezulu wegraphite MOCVD susceptors

Ulwazi lweNkampani

111

Izixhobo zoMzi-mveliso

222

Indawo yokugcina impahla

333

Iziqinisekiso

Iziqinisekiso22

 


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