CVD sic coating cc intonga edibeneyo, isilicon carbide carbon-carbon composite intonga, Sic coated cc intonga edibeneyo

Inkcazelo emfutshane:


Iinkcukacha zeMveliso

Iithegi zeMveliso

Ingcaciso yeMveliso

ICVD SiC CoatingI-CC Composite Rod,ISilicon yeCarbide yeCarbon-Carbon Composite Rod, I-SiC Coated CC Composite Rod evela kwi-vet-china idibanisa iimpawu ezikhethekileyo zecarbon-carbon (CC) imidibanisongesikhuseloI-CVD SiC (iSilicon Carbide) yokugquma. Le ntonga ephucukileyo yenzelwe usetyenziso oluphezulu olufuna ukuzinza okuphezulu kwe-thermal, amandla omatshini, kunye nokuxhathisa imichiza. I-carbon-carbon core ibonelela ngokuqina okugqwesileyo kunye neempawu ezikhaphukhaphu, ngelixa i-SiC coating ikhulisa ukuxhathisa ukunxiba, i-oxidation, kunye namaqondo obushushu aphezulu.

I-coating ye-CVD SiC inikeza ukhuseleko oluqinileyo, oluvumela intonga ukuba imelane neemeko ezinzima, iyenze ilungele ukuveliswa kwe-semiconductor, i-aerospace, kunye neenkqubo zoshishino. i-vet-china iqinisekisa ukubaCVD SiC CoatingI-CC Composite Rod inokusingatha amaqondo obushushu angaphezu kwe-1600 ° C, inika ukuthembeka kwiindawo ezifuna ukuchaneka kunye nokuphila ixesha elide.

Intonga edibeneyo ye-vet-china yenzelwe ukwenza kwiimeko ezinzima kakhulu, ukuqinisekisa ukuzinza kunye nokwandisa ixesha lokuphila kwamacandelo kumashishini afuna kakhulu. Indibaniselwano ye-CVD SiC yokugquma kunye nolwakhiwo oluhlanganisiweyo lweCC lukhokelela kwimveliso engekhaphukhaphu kuphela kodwa eyomelele kakhulu kwaye ixhathise ukunxitywa nokukrazuka.

 SiC ukutyabeka processing kwigraphite umphezulu MOCVD susceptors

Iimpawu eziphambili:

1. Ukumelana nobushushu obuphezulu be-oxidation:

Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.

2. Ukucoceka okuphezulu: okwenziwe nge-chemical vapour deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.

3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.

4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye ne-organic reagents.

 

IiNgcaciso eziPhambili ze-CVD-SIC yoMtyaliso:

SiC-CVD

Ukuxinana

(g/cc)

3.21

Amandla e-Flexural

(Mpa)

470

Ukwandiswa kweThermal

(10-6/K)

4

I-Thermal conductivity

(W/mK)

300

Imifanekiso eneenkcukacha

SiC ukutyabeka processing kwigraphite umphezulu MOCVD susceptorsSiC ukutyabeka processing kwigraphite umphezulu MOCVD susceptorsSiC ukutyabeka processing kwigraphite umphezulu MOCVD susceptorsSiC ukutyabeka processing kwigraphite umphezulu MOCVD susceptorsSiC ukutyabeka processing kwigraphite umphezulu MOCVD susceptors

Ulwazi lweNkampani

111

Izixhobo zoMzi-mveliso

222

Indawo yokugcina impahla

333

Iziqinisekiso

Iziqinisekiso22

 


  • Ngaphambili:
  • Okulandelayo:

  • Incoko ka-WhatsApp kwi-Intanethi!