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4 yeebhiliyoni! I-SK Hynix ibhengeza utyalo-mali lokupakisha oluphucukileyo lwe-semiconductor kwiPaki yoPhando lwasePurdue
I-West Lafayette, e-Indiana - i-SK hynix Inc. ibhengeze izicwangciso zokutyala imali ephantse ibe yi-4 yeebhiliyoni zeerandi ukuze kwakhiwe imveliso yokupakisha ephucukileyo kunye neziko le-R&D yeemveliso zobukrelekrele bokwenziwa ePurdue Research Park. Ukuseka ikhonkco eliphambili kwikhonkco lokubonelela nge-semiconductor yase-US eWest Lafayett...Funda ngokugqithisileyo -
Itekhnoloji yeLaser ikhokelela kutshintsho lwe-silicon carbide substrate processing technology
1. Isishwankathelo se-silicon carbide substrate processing technology Amanyathelo okucubungula akhoyo e-silicon carbide substrate abandakanya: ukugaya isangqa sangaphandle, ukusika, ukuhlambalaza, ukugaya, ukupolisha, ukucoca, njl.Funda ngokugqithisileyo -
Izinto eziphambili ze-thermal field: C / C izinto ezidibeneyo
I-carbon-carbon composites luhlobo lwe-carbon fiber composites, kunye ne-carbon fiber njengento yokuqinisa kunye nekhabhoni efakwe njenge-matrix. I-matrix ye-C / C ye-composites yikhabhoni. Kuba iphantse yaqulunqwa ngokupheleleyo yi-carbon elemental, inokumelana nobushushu obuphezulu ...Funda ngokugqithisileyo -
Iindlela ezintathu eziphambili zokukhula kwekristale ye-SiC
Njengoko kubonisiwe kumfanekiso wesi-3, kukho iindlela ezintathu eziphambili ezijolise ekuboneleleni i-crystal eyodwa ye-SiC kunye nomgangatho ophezulu kunye nokusebenza kakuhle: i-epitaxy yesigaba solwelo (i-LPE), ukuthuthwa komphunga womzimba (PVT), kunye ne-high-temperature ye-chemical vapor deposition (HTCVD). I-PVT yinkqubo esekwe kakuhle yokuvelisa isono se-SiC...Funda ngokugqithisileyo -
I-semiconductor yesizukulwana sesithathu i-GaN kunye ne-epitaxial technology ehambelanayo nentshayelelo emfutshane
1. Ii-semiconductors zesizukulwana sesithathu I-teknoloji ye-semiconductor yesizukulwana sokuqala yaphuhliswa ngokusekelwe kwizinto ze-semiconductor ezifana ne-Si kunye ne-Ge. Yisiseko sezinto eziphathekayo zokuphuhliswa kwee-transistors kunye neteknoloji yesekethe edibeneyo. Izixhobo ze-semiconductor zesizukulwana sokuqala zibeka...Funda ngokugqithisileyo -
23.5 billion, Suzhou super unicorn uya IPO
Emva kweminyaka eli-9 yoshishino, i-Innoscience inyuse ngaphezulu kwe-6 yeebhiliyoni zeeyuan kwinkxaso-mali iyonke, kwaye ixabiso layo lifikelele kwi-23.5 yeebhiliyoni zeeyuan. Uluhlu lwabatyali-mali lude kangangeenkampani ezininzi: iFukun Venture Capital, i-Dongfang State-owned Assets, iSuzhou Zhanyi, iWujian...Funda ngokugqithisileyo -
Iimveliso ezigqunywe nge-tantalum carbide zikonyusa njani ukuxhathisa kokubola kwemathiriyeli?
I-Tantalum carbide coating yitekhnoloji yonyango ehlala isetyenziswa ngaphezulu enokuphucula kakhulu ukuxhathisa kokubola kwezixhobo. I-Tantalum carbide coating inokudityaniswa kumphezulu we-substrate ngeendlela ezahlukeneyo zokulungiselela, ezifana ne-chemical deposition deposition, i-physica ...Funda ngokugqithisileyo -
Intshayelelo kwisizukulwana sesithathu semiconductor GaN kunye neteknoloji ye-epitaxial ehambelanayo
1. Ii-semiconductors zesizukulwana sesithathu I-teknoloji ye-semiconductor yesizukulwana sokuqala yaphuhliswa ngokusekelwe kwizinto ze-semiconductor ezifana ne-Si kunye ne-Ge. Yisiseko sezinto eziphathekayo zokuphuhliswa kwee-transistors kunye neteknoloji yesekethe edibeneyo. Izixhobo ze-semiconductor zesizukulwana sokuqala zibeka i...Funda ngokugqithisileyo -
Uphononongo lwamanani lokulinganisa kwisiphumo segraphite eneporous ekukhuleni kwecrystal carbide crystal
Inkqubo esisiseko yokukhula kwe-crystal ye-SiC ihlukaniswe ibe yi-sublimation kunye nokubola kwezinto ezibonakalayo kwiqondo lokushisa eliphezulu, ukuthuthwa kwezinto zesigaba segesi phantsi kwesenzo se-gradient yeqondo lokushisa, kunye nokukhula kwakhona kwezinto zesigaba segesi kwi-crystal yembewu. Ngokusekelwe koku, i...Funda ngokugqithisileyo
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