Ezinye izinto eziphilayo kunye ne-inorganic ziyafuneka ukuba zithathe inxaxheba kwimveliso ye-semiconductor. Ukongezelela, ekubeni inkqubo isoloko iqhutyelwa kwigumbi elicocekileyo kunye nokuthatha inxaxheba kwabantu, i-semiconductoramaqebengwanangokuqinisekileyo zingcoliswe bubumdaka obahlukeneyo.
Ngokomthombo kunye nendalo yezinto ezingcolileyo, zinokuthi zihlulwe ngokufanelekileyo zibe ngamacandelo amane: amasuntswana, izinto eziphilayo, i-ion zetsimbi kunye ne-oxides.
1. Amanqaku:
Amalungu ubukhulu becala zezinye iipolymers, photoresists kunye ne-etching ukungcola.
Ungcoliseko olunjalo ludla ngokuxhomekeke kumandla e-intermolecular ukuba adsorb kumphezulu we-wafer, echaphazela ukwakheka kwamanani ejometri kunye neeparamitha zombane zenkqubo ye-photolithography yesixhobo.
Ungcoliseko olunjalo lususwa ikakhulu ngokunciphisa ngokuthe ngcembe indawo yabo yokunxibelelana nomphezulu weiqhekeza lesonkangokusebenzisa iindlela eziphathekayo okanye zekhemikhali.
2. Izinto eziphilayo:
Imithombo yokungcola kwezinto eziphilayo ibanzi, njengeoli yesikhumba somntu, ibhaktheriya, ioli yomatshini, igrisi yokucoca, i-photoresist, i-solvents yokucoca, njl.
Ungcoliseko olunjalo luhlala lwenza ifilimu yezinto eziphilayo kumphezulu we-wafer ukukhusela ulwelo lokucoca ukuba lufikelele kumphezulu we-wafer, okubangela ukucocwa okungaphelelanga komgangatho we-wafer.
Ukukhutshwa kokungcola okunjalo kudla ngokuqhutyelwa kwinqanaba lokuqala lenkqubo yokucoca, ngokukodwa kusetyenziswa iindlela zeekhemikhali ezifana ne-sulfuric acid kunye ne-hydrogen peroxide.
3. Iiyoni zentsimbi:
Ukungcola okuqhelekileyo kwesinyithi kubandakanya isinyithi, ubhedu, i-aluminium, i-chromium, isinyithi esityhidiweyo, i-titanium, i-sodium, i-potassium, i-lithium, njl njl. Imithombo ephambili yezixhobo ezahlukeneyo, imibhobho, i-reagents yeekhemikhali, kunye nongcoliseko lwesinyithi oluveliswa xa ukudibanisa kwesinyithi kwenziwa ngexesha lokucubungula.
Olu hlobo lokungcola luhlala lususwa ngeendlela zeekhemikhali ngokuqulunqwa kwee-ion complexes zetsimbi.
4. Ioksidi:
Xa isemiconductoramaqebengwanazibonakaliswe kwindawo equkethe i-oksijini kunye namanzi, umgca we-oxide wendalo uya kwenza phezu komhlaba. Le filimu ye-oxide iya kuthintela iinkqubo ezininzi kwimveliso ye-semiconductor kwaye iqulethe ukungcola okuthile kwesinyithi. Ngaphantsi kweemeko ezithile, baya kwenza iziphene zombane.
Ukususwa kwale filimu ye-oxide idla ngokugqitywa ngokucwiliswa kwi-dilute hydrofluoric acid.
Ukulandelelana kokucoca ngokubanzi
Ukungcola adsorbed kumphezulu semiconductoramaqebengwanazinokwahlulwa zibe ziindidi ezintathu: imolekyuli, i-ayoni kunye neathomu.
Phakathi kwazo, amandla e-adsorption phakathi kokungcola kweemolekyuli kunye nomphezulu we-wafer buthathaka, kwaye olu hlobo lwamasuntswana okungcola lulula ukususa. Ubuninzi bezinto ezingcolileyo ezinamafutha kunye neempawu ze-hydrophobic, ezinokubonelela ngokufihla ukungcola kwe-ionic kunye ne-athomu engcolisa umphezulu we-semiconductor wafers, engabandakanyi ukukhutshwa kwezi ntlobo zimbini zokungcola. Ngoko ke, xa ucoca iikhemikhali ze-semiconductor wafers, ukungcola kwee-molecular kufuneka kususwe kuqala.
Ngoko ke, inkqubo jikelele ye-semiconductoriqhekeza lesonkainkqubo yokucoca yile:
I-De-molecularization-deionization-de-atomization-deionized ukuhlanjululwa kwamanzi.
Ukongeza, ukuze kususwe umaleko we-oxide wendalo kumphezulu we-wafer, inyathelo lokufunxa i-amino acid kufuneka longezwe. Ngoko ke, ingcamango yokucoca kukuqala ukususa ukungcola kwezinto eziphilayo phezu komhlaba; uze unyibilikise i-oxide layer; ekugqibeleni ukususa amasuntswana kunye nokungcoliseka metal, kwaye passivate umphezulu ngexesha elinye.
Iindlela zokucoca eziqhelekileyo
Iindlela zekhemikhali zihlala zisetyenziselwa ukucoca ii-wafers ze-semiconductor.
Ukucocwa kweekhemikhali kubhekisa kwinkqubo yokusebenzisa ii-reagents ezahlukeneyo zeekhemikhali kunye nezinyibilikisi zendalo ukusabela okanye ukunyibilikisa ukungcola kunye namabala e-oyile kumphezulu we-wafer ukutshabalalisa ukungcola, kwaye emva koko uhlanjululwe ngobuninzi bobunyulu obuphezulu bamanzi ashushu kunye abandayo adiyoniweyo ukufumana. indawo ecocekileyo.
Ukucocwa kweekhemikhali kunokwahlulwa ngokucocwa kweekhemikhali ezimanzi kunye nokucoca imichiza eyomileyo, phakathi kwayo ukucocwa kweekhemikhali ezimanzi kusekho.
Ukucoca imichiza emanzi
1. Ukucoca imichiza emanzi:
Ukucocwa kweekhemikhali ezimanzi ikakhulu kubandakanya ukuntywiliselwa kwisisombululo, ukukhuhla ngoomatshini, ukucocwa kwe-ultrasonic, ukucocwa kwe-megasonic, ukutshiza ngokujikelezayo, njl.
2. Ukuntywiliselwa kwisisombululo:
Ukuntywiliselwa kwesisombululo yindlela yokususa ukungcoliseka komphezulu ngokuntywilisela i-wafer kwisisombululo sekhemikhali. Yeyona ndlela isetyenziswa ngokuqhelekileyo ekucoceni iikhemikhali ezimanzi. Izisombululo ezahlukeneyo zingasetyenziselwa ukususa iintlobo ezahlukeneyo zokungcola kumphezulu we-wafer.
Ngokuqhelekileyo, le ndlela ayikwazi ukususa ngokupheleleyo ukungcola kumphezulu we-wafer, ngoko ke imilinganiselo yomzimba efana nokufudumeza, i-ultrasound, kunye nokuvuselela ihlala isetyenziswa xa intywiliselwa.
3. Ukukhuhla ngoomatshini:
I-Mechanical scrubbing isoloko isetyenziselwa ukususa amaqhekeza okanye iintsalela zezinto eziphilayo kumphezulu we-wafer. Ngokuqhelekileyo inokwahlulwa ibe ziindlela ezimbini:ukukhuhla ngesandla kunye nokukhuhla ngesisuli.
Ukukhuhla ngesandlayeyona ndlela ilula yokukhuhla. Ibrashi yensimbi engenastainless isetyenziselwa ukubamba ibhola efakwe kwi-ethanol ye-anhydrous okanye ezinye izinyibilikisi eziphilayo kwaye uhlikihle ngobunono umphezulu we-wafer kwicala elifanayo ukususa ifilimu ye-wax, uthuli, i-glue eseleyo okanye amanye amasuntswana aqinileyo. Le ndlela kulula ukubangela imikrwelo kunye nongcoliseko olukhulu.
I-wiper isebenzisa ujikelezo lomatshini ukuhlikihla umphezulu we-wafer ngebrashi yoboya ethambileyo okanye ibrashi exutyiweyo. Le ndlela inciphisa kakhulu imikrwelo kwi-wafer. I-wiper yoxinzelelo oluphezulu ayiyi kukrazula i-wafer ngenxa yokungabikho kwe-friction yomatshini, kwaye inokususa ukungcola kwi-groove.
4. Ukucoca nge-ultrasonic:
Ukucocwa kwe-ultrasonic yindlela yokucoca esetyenziswa ngokubanzi kwishishini le-semiconductor. Iingenelo zayo zisiphumo esihle sokucoca, ukusebenza okulula, kwaye kunokucoca izixhobo ezintsonkothileyo kunye nezikhongozeli.
Le ndlela yokucoca iphantsi kwesenzo samaza anamandla e-ultrasonic (i-frequency esetyenziswa ngokuqhelekileyo ye-ultrasonic yi-20s40kHz), kwaye iindawo ezinqabileyo kunye ezixineneyo ziya kuveliswa ngaphakathi kwendawo yamanzi. Indawo enqabileyo iya kuvelisa iqamza eliphantse libe livacuum. Xa iqamza lomgodi linyamalala, uxinzelelo oluqinileyo lwendawo luya kuveliswa kufutshane nalo, luqhekeza iibhondi zekhemikhali kwiimolekyuli zokunyibilikisa ukungcola kwindawo enqabileyo. Ukucocwa kwe-Ultrasonic yeyona nto isebenzayo ekususeni ii-residues ze-flux ezinganyibilikiyo okanye ezingenayo.
5. Ukucoca iMegasonic:
Ukucoca i-Megasonic ayinayo kuphela inzuzo yokucoca i-ultrasonic, kodwa iphinda inqobe iintsilelo zayo.
Ukucoca i-Megasonic yindlela yokucoca i-wafers ngokudibanisa i-high-energy (850kHz) i-frequency vibration effect kunye neekhemikhali zokucoca iikhemikhali. Ngexesha lokucoca, iimolekyuli zesisombululo zikhawuleziswa ngamaza e-megasonic (isantya esiphezulu esikhawulezayo sinokufikelela kwi-30cmVs), kwaye i-high-speed wave wave ichaphazela umphezulu we-wafer, ukuze ungcoliseko kunye namasuntswana amahle ancanyathiselwe kumphezulu we-wafer. i-wafer isuswe ngenkani kwaye ifake isisombululo sokucoca. Ukongeza i-acidic surfactants kwisisombululo sokucoca, kwelinye icala, sinokufezekisa injongo yokususa iincinci kunye ne-organic matter kwi-polish surface ngokusebenzisa i-adsorption of surfactants; ngakolunye uhlangothi, ngokudityaniswa kwe-surfactants kunye ne-acidic environment, inokufezekisa injongo yokususa ukungcola kwesinyithi ebusweni bephepha lokupholisha. Le ndlela inokudlala ngaxeshanye indima yokucoca ngoomatshini kunye nokucoca imichiza.
Okwangoku, indlela yokucoca i-megasonic ibe yindlela esebenzayo yokucoca amaphepha okucoca.
6. Indlela yokutshiza ngokujikeleza:
Indlela yokutshiza ejikelezayo yindlela esebenzisa iindlela zoomatshini ukujikelezisa iwafer ngesantya esiphezulu, kwaye ngokuqhubekayo itshiza ulwelo (ubunyulu obuphezulu bamanzi adityanisiweyo okanye olunye ulwelo lokucoca) kumphezulu wewafer ngexesha lenkqubo yokujikeleza ukususa ukungcola umphezulu we-wafer.
Le ndlela isebenzisa ungcoliseko olukumphezulu wewafer ukunyibilika kulwelo olutshiziweyo (okanye ngokwekhemikhali isabela ngayo ukuze inyibilike), kwaye isebenzisa isiphumo secentrifugal sokujikeleza ngesantya esiphezulu ukwenza ulwelo oluqulethe ukungcola lwahluke kumphezulu we-wafer. ngexesha.
Indlela yokutshiza ejikelezayo ineenzuzo zokucocwa kweekhemikhali, ukucocwa komatshini wolwelo, kunye nokukhuhla ngoxinzelelo oluphezulu. Ngexesha elifanayo, le ndlela inokudibaniswa kunye nenkqubo yokomisa. Emva kwexesha lokucocwa kokutshiza kwamanzi, ukutshiza kwamanzi kumisiwe kwaye kusetyenziswe igesi yokutshiza. Ngexesha elifanayo, isantya sokujikeleza sinokunyuswa ukwandisa amandla e-centrifugal ngokukhawuleza ukucima umphezulu we-wafer.
7.Ukucoca imichiza eyomileyo
Ukucoca okomileyo kubhekisela kwiteknoloji yokucoca engasebenzisi izisombululo.
Ubuchwephesha bokucoca okomileyo obusetyenziswa ngoku bubandakanya: iteknoloji yokucoca i-plasma, iteknoloji yokucoca isigaba segesi, iteknoloji yokucoca i-beam, njl.
Iinzuzo zokucoca okomileyo ziyinkqubo elula kwaye akukho ngcoliseko yokusingqongileyo, kodwa ixabiso liphezulu kwaye ububanzi bokusetyenziswa abukho bukhulu okwangoku.
1. Itekhnoloji yokucoca iplasma:
Ukucocwa kweplasma kudla ngokusetyenziswa kwinkqubo yokususa ifotoresist. Inani elincinci le-oksijini lingeniswa kwinkqubo yokusabela kwi-plasma. Ngaphantsi kwesenzo sentsimi yombane enamandla, i-oksijini ivelisa i-plasma, ekhawuleza i-oxidize i-photoresist ibe yimeko yegesi eguquguqukayo kwaye ikhutshwe.
Le teknoloji yokucoca ineenzuzo zokusebenza okulula, ukusebenza kakuhle okuphezulu, indawo ecocekileyo, akukho mikrwelo, kwaye ifanelekile ekuqinisekiseni umgangatho wemveliso kwinkqubo ye-degumming. Ngaphezu koko, ayisebenzisi i-acids, i-alkali kunye ne-solvents ye-organic, kwaye akukho zingxaki ezifana nokulahlwa kwenkunkuma kunye nokungcoliswa kwendalo. Ngoko ke, ixatyiswa ngakumbi ngabantu. Nangona kunjalo, ayikwazi ukususa i-carbon kunye nezinye izinto ezingcolileyo zetsimbi okanye i-metal oxide.
2. Itekhnoloji yokucoca isigaba segesi:
Ukucocwa kwesigaba segesi kubhekiselele kwindlela yokucoca esebenzisa isigaba segesi esilinganayo sento ehambelanayo kwinkqubo yolwelo ukusebenzisana nento engcolileyo kumphezulu we-wafer ukufezekisa injongo yokususa ukungcola.
Ngokomzekelo, kwinkqubo ye-CMOS, ukucocwa kwe-wafer kusebenzisa intsebenziswano phakathi kwesigaba segesi ye-HF kunye nomphunga wamanzi ukususa i-oxides. Ngokuqhelekileyo, inkqubo ye-HF equkethe amanzi kufuneka ihambisane nenkqubo yokususa i-particle, ngelixa ukusetyenziswa kwe-gas phase HF yokucoca iteknoloji ayifuni inkqubo yokususa i-particle elandelayo.
Iinzuzo ezibaluleke kakhulu xa kuthelekiswa nenkqubo ye-HF enamanzi incinci kakhulu i-HF yokusetyenziswa kweekhemikhali kunye nokusebenza kakuhle kokucoca.
Wamkelekile nabaphi na abathengi abavela kwihlabathi liphela ukuba basindwendwele kwingxoxo eyongezelelekileyo!
https://www.vet-china.com/
https://www.facebook.com/people/Ningbo-Miami-Advanced-Material-Technology-Co-Ltd/100085673110923/
https://www.linkedin.com/company/100890232/admin/page-posts/published/
https://www.youtube.com/@user-oo9nl2qp6j
Ixesha lokuposa: Aug-13-2024