Kutheni kufuneka ubhitye?

Kwinqanaba lenkqubo ye-back-end, iiqhekezana lesonka (ilitye le-siliconkunye neesekethe ngaphambili) kufuneka icuthwe ngasemva ngaphambi kokudaywa okulandelayo, ukuwelda kunye nokupakishwa ukunciphisa ukuphakama kwephakheji, ukunciphisa umthamo wephakheji ye-chip, ukuphucula ukusebenza kakuhle kokusasazwa kobushushu be-chip, ukusebenza kombane, iipropathi zoomatshini kunye nokunciphisa inani le-chip. ukudayiva. Ukugaya ngasemva kuneenzuzo zokusebenza okuphezulu kunye neendleko eziphantsi. Ithathe indawo yenkqubo yokurhabula emanzi yemveli kunye ne-ion etching ukuze ibe yeyona teknoloji ibalulekileyo yokuthoba umva.

Isonka esicandiweyo

Indlela yokunciphisa?

Inkqubo ephambili ye-wafer thinning kwinkqubo yokupakisha yemveli

Amanyathelo athile eiqhekezana lesonkaUkubhitya kukubophelela isicangca esisicaba ukuze sisetyenziswe kwifilimu ebhityileyo, kwaye emva koko usebenzise ivacuum ukubhengeza ifilimu ebhityileyo kunye netshiphu ekuyo kwitafile yewafer yeceramic eneporous, lungelelanisa imigca yephenyane engaphakathi nangaphandle esetyhula kumbindi womsebenzi womhlaba. Ivili lokusila ledayimani elimile okwekomityi ukuya embindini we-silicon wafer, kunye ne-silicon wafer kunye nevili lokusila lijikeleza ii-axes zabo zokusika-ekusilani. Ukusila kubandakanya amanqanaba amathathu: ukugaya ngokurhabaxa, ukucolwa kakuhle kunye nokupolisha.

I-wafer ephuma kumzi-mveliso we-wafer igaya ngasemva ukuze ibhitye ibe yingqimba efunekayo yokupakishwa. Xa ugaya i-wafer, i-tape kufuneka isetyenziswe ngaphambili (iNdawo eSebenzayo) ukukhusela indawo yesiphaluka, kwaye i-back side iphantsi ngexesha elifanayo. Emva kokugaya, susa i-tape kwaye ulinganise ubukhulu.
Iinkqubo zokusila eziye zasetyenziswa ngempumelelo ekulungiseleleni i-silicon wafer ziquka ukucola itafile ejikelezayo,ilitye le-siliconukugaya ukujikeleza, ukugaya ngamacala amabini, njl njl. Ngophuculo olongezelelweyo lweemfuno zomgangatho ophezulu we-crystal crystal wafers, ubugcisa obutsha bokugaya buhlala bucetywayo, njenge-TAIKO yokugaya, i-chemical mechanical grinding, i-polish grinding kunye ne-planetary disc grinding.

Ukusila kwitafile ejikelezayo:
Ukusila kwetafile ejikelezayo (ukusila kwetafile ejikelezayo) yinkqubo yokusila kwangoko esetyenziswa kulungiselelo lwe-silicon wafer kunye nokucuthwa komqolo. Umgaqo wayo uboniswe kwi-Figure 1. I-wafers ye-silicon igxininiswe kwiikomityi zokufunxa zetafile ejikelezayo, kwaye ijikeleze i-synchronously iqhutywe yitafile ejikelezayo. Iintsimbi ze-silicon ngokwazo azijikelezi kwi-axis yazo; ivili lokusila lityiswa nge-axially ngelixa lijikeleza ngesantya esiphezulu, kwaye ububanzi bevili lokusila bukhulu kunobubanzi be-silicon yangaphandle. Zimbini iindidi zokusila itafile ejikelezayo: ukucola ngobuso kunye nokusila ngobuso. Ebusweni bokusila, ububanzi bevili lokusila bukhulu kunobubanzi be-silicon yafer, kwaye i-spindle yevili lokusila isondla ngokuqhubekayo ecaleni kwendlela yayo ye-axial de kube kugqitywe ukugqithiswa, kwaye emva koko i-silicon wafer ijikeleziswa phantsi kwetafile ejikelezayo; ebusweni ukugaya i-tangential, ivili lokusila litya ecaleni kwendlela yalo ye-axial, kwaye i-silicon wafer ijikeleza ngokuqhubekayo phantsi kwe-drive yediski ejikelezayo, kwaye ukugaya kugqitywe ngokutya okuphindaphindiweyo (ukuphindaphinda) okanye ukutya okukhasayo (i-creepfeed).

Umzobo we-1, umzobo we-schematic we-rotary table grinding (ubuso be-tangential) umgaqo

Xa kuthelekiswa nendlela yokugaya, ukugaya itafile ejikelezayo kunenzuzo yezinga eliphezulu lokususa, umonakalo omncinci wendawo, kunye nokuzenzekelayo okulula. Nangona kunjalo, indawo yokugaya yokwenyani (ukusila okusebenzayo) B kunye ne-angle yokusikwa θ (i-engile phakathi kwesangqa esingaphandle sevili lokusila kunye nesangqa esingaphandle se-silicone wafer) kwinkqubo yokugaya utshintsho kunye nokutshintsha kwendawo yokusika. yevili lokusila, okubangela amandla okugaya angazinzanga, okwenza kube nzima ukufumana ukuchaneka kwendawo efanelekileyo (ixabiso eliphezulu le-TTV), kwaye kulula ukubangela iziphene ezifana nokudilika komphetho kunye nokudilika komphetho. Itekhnoloji ejikelezayo yokusila itekhnoloji isetyenziselwa ikakhulu ukusetyenzwa kwee-wafers ze-silicon enye engaphantsi kwe-200mm. Ukonyuka kobukhulu beekristale ze-silicon zafers kubeke phambili iimfuno eziphezulu zokuchaneka komphezulu kunye nokuchaneka kwentshukumo yebhentshi yesixhobo sokusebenza, ngoko ke ukucola kwetafile okujikelezayo akufanelanga ukugaya ii-wafers ze-silicon enye-crystal ngaphezulu kwe-300mm.
Ukuze kuphuculwe ukusebenza kakuhle kokusila, isixhobo sokugaya i-tangential plane yorhwebo sidla ngokuthatha isakhiwo sevili lokugaya. Ngokomzekelo, isethi yamavili okusila arhabaxa kunye neseti yamavili acolekileyo okusila axhotyiswe kwisixhobo, kwaye itafile ejikelezayo ijikeleza isangqa esinye ukugqiba ukucola nokucoleka ngokulandelelanayo. Olu hlobo lwezixhobo lubandakanya i-G-500DS yeNkampani ye-GTI yaseMelika (Umfanekiso 2).

Umfanekiso 2, G-500DS isixhobo sokusila itafile ejikelezayo yeNkampani yeGTI eMelika.

I-Silicon wafer rotation yokusila:
Ukuze kuhlangatyezwane neemfuno zobungakanani obukhulu bokulungiswa kwe-silicon yewafer kunye nokucutshungulwa ngasemva, kwaye ufumane ukuchaneka komphezulu ngexabiso elilungileyo le-TTV. Ngo-1988, umphengululi waseJapan uMatsui wenze isiphakamiso se-silicon yafer wafer rotation yokusila (in-feedgrinding). Umgaqo wayo uboniswe kuMfanekiso 3. I-crystal silicon wafer enye kunye ne-cup-shaped diamond grinding wheel adsorbed kwi-workbench ejikelezayo ejikeleze i-axes yazo, kunye nevili lokusila lihlala lisondliwa ngokuqhubekayo kwicala le-axial ngaxeshanye. Phakathi kwazo, ububanzi bevili lokusila likhulu kunobubanzi be-silicone wafer esetyenzisiweyo, kwaye i-circumference yayo idlula embindini we-silicon wafer. Ukunciphisa amandla okusila kunye nokunciphisa ubushushu bokusila, ikomityi yokufunxa ivacuum ikholisa ukuchetywa ibe yiconvex okanye imilo econcave okanye i-angle phakathi kwevili lokusila kunye ne-axis yokufunxa ikomityi yokuphotha iyahlengahlengiswa ukuqinisekisa ukucola okuncinci phakathi ivili lokusila kunye ne-silicon wafer.

Umzobo 3, umzobo weSchematic wesilicon wafer rotary umgaqo wokusila

Xa kuthelekiswa nokusila kwetafile ejikelezayo, ukucola kwesilicon yafer rotary kunale mingenelo ilandelayo: ① Ixesha elinye lokusila le-wafer lingenza iipali zesilicon zobukhulu obungaphezulu kwe-300mm; ② Eyona ndawo yokugaya B kunye ne-angle yokusika θ ihlala ihleli, kwaye amandla okugaya azinzile; ③ Ngokulungelelanisa i-engile yokuthambekela phakathi kwe-axis yevili lokusila kunye ne-silicon wafer axis, imilo engaphezulu yecrystal silicon wafer enye inokulawulwa ngokusebenzayo ukufumana ukuchaneka komphezulu ongcono. Ukongeza, indawo yokugaya kunye ne-angle yokusika θ ye-silicon wafer rotary grinding nayo inenzuzo yokugaya i-margin enkulu, ukutyeba okulula kwe-intanethi kunye nokukhangela umgangatho womgangatho ophezulu kunye nokulawula umgangatho, ukwakheka kwezixhobo ezidibeneyo, ukuguqa okudibeneyo kwezikhululo ezininzi, kunye nokusebenza kakuhle kokugaya.
Ukuze kuphuculwe ukusebenza kakuhle kwemveliso kunye nokuhlangabezana neemfuno zemigca yemveliso ye-semiconductor, izixhobo zokusila ezirhwebayo ezisekelwe kumgaqo we-silicon wafer rotary grinding yamkela i-multi-spindle multi-station structure, enokugqiba ukugaya kunye nokugaya okulungileyo ekulayisheni nasekukhupheni enye. . Idityaniswe nezinye izibonelelo ezincedisayo, inokuqonda ukugaya okuzenzekela ngokupheleleyo kweecrystal crystal wafers "dry-in/dry-out" kunye "necassette to cassette".

Ukusila okumacala amabini:
Xa i-silicon wafer rotary sicola isenza indawo ephezulu nangaphantsi ye-silicon, i-workpiece kufuneka iguqulwe kwaye iqhutywe ngamanyathelo, anciphisa ukusebenza kakuhle. Kwangaxeshanye, i-silicon wafer rotary grinding inempazamo yomphezulu wokukopa (ikhutshelwe) kunye namanqaku okusila (i-grindingmark), kwaye akunakwenzeka ukususa ngokufanelekileyo iziphene ezinje nge-waviness kunye ne-taper kumphezulu we-crystal silicon wafer emva kokusikwa kocingo. (i-multi-saw), njengoko kubonisiwe kwi-Figure 4. Ukoyisa ezi ziphene zingentla, iteknoloji yokugaya emacala amabini (i-doublesidegrinding) yavela kwi-1990s, kwaye umgaqo wayo uboniswe kuMfanekiso 5. crystal silicon wafer kwiringi yogcino kwaye ujikelezise kancinane eqhutywa yirola. Ipere yamavili okusila edayimani amile okwekomityi abekwe kumacala omabini ecrystal silicon wafer. Iqhutywa ngumoya ojikelezayo wombane, ijikeleza kumacala achaseneyo kwaye yondla i-axially ukufezekisa ukucola okuphindwe kabini kwe-crystal silicon wafer enye. Njengoko kunokubonwa kumzobo, ukugaya okumacala amabini kunokususa ngokufanelekileyo i-waviness kunye ne-taper kumphezulu we-crystal silicon wafer emva kokusika ucingo. Ngokolwalathiso lwelungiselelo le-axis yevili lokusila, ukucola okumacala amabini kunokuthe tye kwaye ngokuthe nkqo. Phakathi kwazo, ukucola okuthe tyaba okuphindwe kabini kunokunciphisa ngokufanelekileyo impembelelo ye-silicon wafer deformation okubangelwa ubunzima obufileyo be-silicon wafer kumgangatho wokugaya, kwaye kulula ukuqinisekisa ukuba iimeko zenkqubo yokusila kumacala omabini e-silicon enye yekristale. I-wafer iyafana, kwaye amasuntswana abrasive kunye neechips zokusila akukho lula ukuhlala kumphezulu we-crystal silicon wafer enye. Yeyona ndlela ifanelekileyo yokugaya.

Umzobo 4, "Ikopi yempazamo" kwaye unxibe iziphene zamanqaku kwi-silicon wafer rotation grilling

Umzobo we-5, umzobo weskimu somgaqo-mbini wokusila

Itheyibhile yoku-1 ibonisa uthelekiso phakathi kokusila kunye namacala amabini okusila kwezi ntlobo zintathu zingentla ze-crystal silicon wafers. Ukusila okumacala amabini kusetyenziswa ikakhulu ukusetyenzwa kwe-silicon wafer ngaphantsi kwe-200mm, kwaye kunesivuno esikhulu se-wafer. Ngenxa yokusetyenziswa kwamavili okusila abrasive asisigxina, ukusila kwee-crystal silicon wafers kunokufumana umgangatho ophezulu kakhulu womhlaba kunowokusila ngamacala amabini. Ke ngoko, zombini ukucola okujikelezayo kwesilicon kunye nokusila okumacala amabini kunokuhlangabezana neemfuno zomgangatho wokusetyenzwa kwee-300mm ze-silicon wafers, kwaye ngoku zezona ndlela zibalulekileyo zokulungisa umcaba. Xa ukhetha indlela yokusetyenzwa kwe-silicon wafer flattening, kuyafuneka ukuba kuqwalaselwe ngokubanzi iimfuno zobukhulu bobukhulu, umgangatho womphezulu, kunye netekhnoloji yokupholisha iwafer ye-wafer ye-silicon enye. Umqolo obhityileyo wewafer unokukhetha kuphela indlela yokucutshungulwa kwicala elinye, enje ngesilicon wafer rotary grinding method.

Ukongeza ekukhetheni indlela yokugaya kwi-silicon yafer wafer, kuyafuneka ukuba ukhethe ukhetho lweeparamitha zenkqubo ezifanelekileyo ezinje ngoxinzelelo olulungileyo, ubungakanani bevili lokusila, ivili lokusila, isantya sevili lokugaya, isantya se-silicon, isantya se-silicon, i-viscosity yokugaya kunye umyinge wokuhamba, njl., kwaye umisele indlela yenkqubo efanelekileyo. Ngokwesiqhelo, inkqubo yokugaya ecandekileyo ibandakanya ukugaya okurhabaxa, ukugqibezela ukugqiba, ukugqiba ukugawula, ukugawula okungenantlantsi kunye nokuxhaswa okucothayo kusetyenziselwa ukufumana iifuleti ze-crystal ze-silicon ezinomgangatho ophezulu wokusebenza, ukugcwala okuphezulu komhlaba kunye nomonakalo ophantsi womphezulu.

Itekhnoloji entsha yokugaya inokubhekisa kuncwadi:

Umzobo we-5, umzobo oqingqiweyo we-TAIKO umgaqo wokugaya

Umzobo 6, umzobo wesikimu somgaqo wokugaya idiski yeplanethi

Itekhnoloji yokusila ebhityileyo kakhulu:
Kukho itekhnoloji yokugaya i-wafer carrier kunye neteknoloji yokusila edge (Umfanekiso 5).