Imithombo yongcoliseko kunye nothintelo kwishishini lemveliso ye-semiconductor

Ukuveliswa kwesixhobo se-semiconductor ikakhulu kubandakanya izixhobo ezidityanisiweyo, iisekethe ezidibeneyo kunye neenkqubo zabo zokupakisha.
Imveliso ye-Semiconductor inokwahlulwa ibe ngamanqanaba amathathu: imveliso yomzimba wemveliso, imvelisoiqhekezana lesonkaimveliso kunye nokudibanisa isixhobo. Phakathi kwazo, olona ngcoliseko lunobuzaza linqanaba lokwenziwa kwe-wafer yemveliso.
Izinto ezingcolisayo zahlulwe kakhulu zibe ngamanzi amdaka, igesi emdaka kunye nenkunkuma eqinileyo.
Inkqubo yokwenziwa kweChip:
Isiqwenga se-siliconemva kokusila kwangaphandle - ukucoca - i-oxidation - iyunifomu yokumelana - i-photolithography - uphuhliso - i-etching - i-diffusion, i-ion implantation - i-chemical vapour deposition - i-chemical mechanical polishing - i-metallization, njl.

Amanzi amdaka
Isixa esikhulu samanzi amdaka senziwa kwinqanaba ngalinye lenkqubo yokwenziwa kwe-semiconductor kunye novavanyo lokupakisha, ikakhulu amanzi amdaka asekelwe kwiasidi, amanzi amdaka ane-ammonia kunye namanzi amdaka aphilayo.

1. Amanzi amdaka aneFluorine:
I-Hydrofluoric acid iba sesona sinyibilikisi siphambili esisetyenziswa kwi-oxidation kunye neenkqubo ze-etching ngenxa ye-oxidizing kunye neempawu ezidliwayo. Amanzi amdaka aqulathe i-Fluorine kwinkqubo ikakhulu avela kwinkqubo yokusasazwa kunye nenkqubo yokupholisa ngamachiza ekhemikhali kwinkqubo yokwenziwa kwetshiphu. Kwinkqubo yokucoca i-silicon wafers kunye nezixhobo ezinxulumene nazo, i-hydrochloric acid iphinda isetyenziswe ngamaxesha amaninzi. Zonke ezi nkqubo zigqityezelwa kwiitanki ezikhethekileyo zokuvala okanye kwizixhobo zokucoca, ukuze amanzi amdaka anefluorine akhutshwe ngokuzimeleyo. Ngokutsho koxinaniso, lunokwahlulwa lube ngamanzi amdaka ane-fluorine ane-high-concentration kunye ne-low-concentration ye-ammonia equkethe amanzi amdaka. Ngokuqhelekileyo, ukuxinwa kwamanzi amdaka aqukethe i-ammonia ephezulu kunokufikelela kwi-100-1200 mg / L. Uninzi lweenkampani ziphinda zisebenzise le ndawo yamanzi amdaka kwiinkqubo ezingadingi mgangatho ophezulu wamanzi.
2. Amanzi amdaka anesiseko se-Acid:
Phantse yonke inkqubo kwinkqubo yokuvelisa isekethe edibeneyo ifuna ukuba i-chip ihlambuluke. Okwangoku, i-asidi ye-sulfuric kunye ne-hydrogen peroxide zezona ziqhelekileyo zisetyenziselwa ukucoca ulwelo kwinkqubo yokwenziwa kwesekethe edibeneyo. Ngexesha elifanayo, i-acid-base reagents ezifana ne-nitric acid, i-hydrochloric acid kunye namanzi e-ammonia nawo asetyenziswa.
Amanzi amdaka e-acid-base yenkqubo yokuvelisa ikakhulu avela kwinkqubo yokucoca kwinkqubo yokwenziwa kwe-chip. Kwinkqubo yokupakisha, i-chip iphathwa ngesisombululo se-acid-base ngexesha le-electroplating kunye nohlalutyo lweekhemikhali. Emva konyango, kufuneka ihlanjwe ngamanzi acocekileyo ukuvelisa amanzi amdaka asetyenzisiweyo. Ukongeza, ii-acid-base reagents ezifana ne-sodium hydroxide kunye ne-hydrochloric acid nazo zisetyenziswa kwisikhululo samanzi esicocekileyo ukuhlaziya i-anion kunye ne-cation resins ukuvelisa amanzi amdaka ahlaziyiweyo. Amanzi okuhlamba umsila nawo aveliswa ngexesha lenkqubo yokuhlamba igesi yenkunkuma ene-asidi. Kwiinkampani ezidityanisiweyo zokwenziwa kweesekethe, ubungakanani bamanzi amdaka asekelwe kwi-asidi bukhulu kakhulu.
3. Amanzi amdaka endalo:
Ngenxa yeenkqubo ezahlukeneyo zokuvelisa, inani lezinto ezinyibilikayo ezisetyenziswa kwishishini le-semiconductor lihluke kakhulu. Nangona kunjalo, njengeearhente zokucoca, izinyibilikisi ze-organic zisasetyenziswa ngokubanzi kwiikhonkco ezahlukeneyo zokupakisha. Ezinye izinyibilikisi ziba kukukhupha kwamanzi amdaka.
4. Amanye amanzi amdaka:
Inkqubo ye-etching yenkqubo yokuvelisa i-semiconductor iya kusebenzisa isixa esikhulu se-ammonia, i-fluorine kunye namanzi ahlambulukileyo aphezulu ukuze kuhlanjululwe ukungcola, ngaloo ndlela kuvelise ukukhutshwa kwamanzi amdaka aqukethe i-ammonia ephezulu.
Inkqubo ye-electroplating iyadingeka kwinkqubo yokupakishwa kwe-semiconductor. I-chip idinga ukucocwa emva kwe-electroplating, kwaye i-electroplating yokucoca amanzi amdaka iya kuveliswa kule nkqubo. Ekubeni ezinye iintsimbi zisetyenziselwa i-electroplating, kuya kubakho ukukhutshwa kwe-ion yensimbi kumanzi amdaka okucoca i-electroplating, njengelothe, i-tin, i-disc, i-zinc, i-aluminium, njl.

Inkunkuma yegesi
Kuba inkqubo ye-semiconductor ineemfuno eziphezulu kakhulu zokucoceka kwegumbi lokusebenza, iifeni zihlala zisetyenziselwa ukukhupha iintlobo ngeentlobo zeegesi zenkunkuma eziguquguqukayo ngexesha lenkqubo. Ke ngoko, ukukhutshwa kwerhasi yenkunkuma kwishishini le-semiconductor kubonakaliswa ngumthamo omkhulu wokukhupha kunye noxinzelelo oluphantsi lokukhutshwa. Ukukhutshwa kwerhasi eyinkunkuma nako kuchaphazeleka kakhulu.
Oku kukhutshwa kwegesi eyinkunkuma kunokohlulwa ikakhulu ngokweendidi ezine: irhasi eneasidi, irhasi yealkaline, irhasi yenkunkuma ephilayo kunye negesi eyityhefu.
1. Irhasi yenkunkuma ene-Acid:
I-asidi-base gas yenkunkuma ivela ikakhulu ekusasazeni,CVD, I-CMP kunye neenkqubo ze-etching, ezisebenzisa isisombululo se-acid-base sokucoca ukucoca i-wafer.
Okwangoku, i-solvent esetyenziswa ngokuqhelekileyo yokucoca kwinkqubo yokuvelisa i-semiconductor ngumxube we-hydrogen peroxide kunye ne-sulfuric acid.
Irhasi yenkunkuma eveliswa kwezi nkqubo ibandakanya iigesi ezineasidi ezifana ne-asidi ye-sulfuric, i-hydrofluoric acid, i-hydrochloric acid, i-nitric acid kunye ne-phosphoric acid, kunye negesi ye-alkaline i-ammonia.
2. Irhasi yenkunkuma:
Irhasi yenkunkuma yendalo iphuma ikakhulu kwiinkqubo ezinje ngefotografi, uphuhliso, i-etching kunye nokusasazwa. Kwezi nkqubo, isisombululo se-organic (njenge-isopropyl alcohol) sisetyenziselwa ukucoca umphezulu we-wafer, kwaye i-gas yenkunkuma eyenziwa yi-volatilization yenye yemithombo ye-organic waste gas;
Kwangaxeshanye, ifotoresist (photoresist) esetyenziswa kwinkqubo yephotolithography kunye ne-etching iqulethe izinyibilikisi eziguquguqukayo zezinto eziphilayo, ezifana ne-acetate ye-butyl, eguqukayo kwi-atmosfera ngexesha lenkqubo yokucwangcisa i-wafer, engomnye umthombo werhasi yenkunkuma ephilayo.
3. Irhasi yenkunkuma enetyhefu:
Irhasi yenkunkuma enetyhefu ikakhulu ivela kwiinkqubo ezinjenge-crystal epitaxy, i-etching eyomileyo kunye ne-CVD. Kwezi nkqubo, iintlobo ngeentlobo iigesi ezikhethekileyo ezikhethekileyo zisetyenziselwa ukucubungula i-wafer, njenge-silicon (SiHj), i-phosphorus (PH3), i-carbon tetrachloride (CFJ), i-borane, i-boron trioxide, njl. Ezinye iigesi ezikhethekileyo zinetyhefu, iyaphefumla kwaye iyadleka.
Ngexesha elifanayo, kwinkqubo yokucoca eyomileyo kunye nenkqubo yokucoca emva kokufakwa komphunga wekhemikhali kwimveliso ye-semiconductor, igesi enkulu ye-oxide (PFCS) iyadingeka, njenge-NFS, i-C2F & CR, i-C3FS, i-CHF3, i-SF6, njl. Ezi zixhobo ze-perfluorinated Yiba nokufunxa okuqinileyo kwindawo yokukhanya kwe-infrared kwaye uhlale emoyeni ixesha elide. Ngokuqhelekileyo zijongwa njengowona mthombo uphambili wempembelelo yegreenhouse yehlabathi.
4. Inkqubo yokupakishwa kwenkunkuma yegesi:
Xa kuthelekiswa nenkqubo yokuvelisa i-semiconductor, irhasi yenkunkuma eveliswa yinkqubo yokupakisha ye-semiconductor ilula, ikakhulu igesi ene-asidi, i-epoxy resin kunye nothuli.
Irhasi yenkunkuma eneAcidic iveliswa ikakhulu kwiinkqubo ezifana ne-electroplating;
Ukubhaka igesi yenkunkuma kuveliswa kwinkqubo yokubhaka emva kokuncamathiswa kwemveliso kunye nokutywinwa;
Umatshini wokudayela uvelisa irhasi yenkunkuma equlathe uthuli lwe-silicon ngexesha lenkqubo yokusika i-wafer.

Iingxaki zokungcoliseka kwendalo
Ngeengxaki zongcoliseko lokusingqongileyo kwishishini le-semiconductor, ezona ngxaki ziphambili ekufuneka zisonjululwe zezi:
· Ukukhutshwa okukhulu kokungcola komoya kunye ne-volatile organic compounds (VOCs) kwinkqubo ye-photolithography;
· Ukukhutshwa kweekhompawundi ezine-perfluorinated (PFCS) kwi-plasma etching kunye neenkqubo zokubeka umphunga wekhemikhali;
· Ukusetyenziswa kwamandla amakhulu kunye namanzi kwimveliso kunye nokhuseleko lokhuseleko lwabasebenzi;
· Ukurisayikilishwa nokubeka iliso kungcoliseko lwemveliso;
· Iingxaki zokusebenzisa imichiza eyingozi kwiinkqubo zokupakisha.

Imveliso ecocekileyo
Isixhobo se-semiconductor iteknoloji yokuvelisa imveliso ecocekileyo inokuphuculwa ukusuka kwimiba yemathiriyeli ekrwada, iinkqubo kunye nolawulo lwenkqubo.

Ukuphucula imathiriyeli ekrwada kunye namandla
Okokuqala, ukucoceka kwezinto kufuneka kulawulwe ngokungqongqo ukunciphisa ukungeniswa kokungcola kunye neengqungquthela.
Okwesibini, ubushushu obahlukeneyo, ukubhaqwa kokuvuza, ukungcangcazela, ukothuka kombane onevoltage ephezulu kunye nolunye uvavanyo kufuneka lwenziwe kumacandelo angenayo okanye iimveliso ezigqityiweyo ngaphambi kokuba zifakwe kwimveliso.
Ukongezelela, ukucoceka kwezinto ezincedisayo kufuneka kulawulwe ngokungqongqo. Kukho ubugcisa obuninzi obunokusetyenziswa ukuvelisa amandla acocekileyo.

Lungiselela inkqubo yemveliso
Ishishini le-semiconductor ngokwalo lizama ukunciphisa impembelelo yalo kwindalo ngokusebenzisa ukuphuculwa kweteknoloji yenkqubo.
Ngokomzekelo, kwi-1970, i-solvents ye-organic yayisetyenziselwa ukucoca i-wafers kwi-teknoloji yokucoca isekethe edibeneyo. Ngoo-1980, izisombululo ze-asidi kunye ne-alkali ezifana ne-asidi ye-sulfuric zazisetyenziselwa ukucoca ii-wafers. Kuze kube yi-1990, iteknoloji yokucoca i-oksijini ye-plasma yaphuhliswa.
Ngokuphathelele ukupakishwa, uninzi lweenkampani okwangoku zisebenzisa itekhnoloji ye-electroplating, eya kubangela ukungcoliseka kwesinyithi esinzima kwindalo esingqongileyo.
Nangona kunjalo, izityalo zokupakisha eShanghai azisasebenzisi itekhnoloji ye-electroplating, ke akukho mpembelelo yesinyithi esinzima kokusingqongileyo. Kunokufunyaniswa ukuba ishishini le-semiconductor linciphisa ngokuthe ngcembe impembelelo yalo kwimo engqongileyo ngokuphuculwa kwenkqubo kunye nokutshintshwa kweekhemikhali kwinkqubo yalo yophuhliso, ephinda ilandele inkqubo yangoku yophuhliso lwehlabathi lwenkqubo yokukhuthaza kunye noyilo lwemveliso ngokusekelwe kokusingqongileyo.

Okwangoku, ukuphuculwa kwenkqubo yasekhaya ngakumbi kuyenziwa, kubandakanywa:
·Ukutshintshwa kunye nokunciphisa igesi ye-ammonium PFCS yonke, efana nokusebenzisa i-PFCs gas ene-low greenhouse effect ukuze ithathe indawo yerhasi nge-high greenhouse effect, njengokuphucula ukuhamba kwenkqubo kunye nokunciphisa inani legesi ye-PFCS esetyenziswa kwinkqubo;
·Ukuphucula ukucocwa kwe-multi-wafer kwi-single-wafer yokucoca ukunciphisa inani leejenti zokucoca iikhemikhali ezisetyenziswa kwinkqubo yokucoca.
·Ulawulo lwenkqubo engqongqo:
a. Ukuqonda i-automation yenkqubo yokuvelisa, enokuqonda ukusetyenzwa okuchanekileyo kunye nokuveliswa kwebhetshi, kunye nokunciphisa izinga eliphezulu lempazamo yokusebenza ngesandla;
b. Izinto ezisingqongileyo zenkqubo ecocekileyo, malunga ne-5% okanye ngaphantsi kwelahleko yesivuno ibangelwa ngabantu kunye nokusingqongileyo. Izinto ezicocekileyo zenkqubo yendalo engqongileyo zibandakanya ukucoceka komoya, amanzi acocekileyo, umoya ocinezelweyo, i-CO2, i-N2, ubushushu, umswakama, njl njl. umoya, oko kukuthi, ugxininiso lokubala kwamasuntswana;
c. Yomeleza ubhaqo, kwaye ukhethe amanqaku aphambili afanelekileyo ukuze abonwe kwiindawo zokusebenza ezinenkunkuma eninzi ngexesha lenkqubo yokuvelisa.

 

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Ixesha lokuposa: Aug-13-2024
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