4 Inch GaAs Wafer

Tsanangudzo Pfupi:

VET Energy 4 inch GaAs wafer ndeye yakakwira-kuchena semiconductor substrate inozivikanwa neakanakisa emagetsi zvivakwa, zvichiita kuti ive sarudzo yakanaka kune dzakasiyana siyana dzekushandisa. VET Energy inoshandisa hunyanzvi hwekukura kwekristaro kugadzira maGaAs mawafer ane yunifomu, yakaderera density, uye chaiyo doping mazinga.

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Iyo 4 Inch GaAs Wafer kubva kuVET Energy chinhu chakakosha kune yakakwirira-kumhanya uye optoelectronic zvishandiso, zvinosanganisira RF amplifiers, LEDs, uye solar maseru. Aya mawaferi anozivikanwa nekukwira kwawo erekitironi kufamba uye kugona kushanda pama frequency epamusoro, achiaita chinhu chakakosha mu advanced semiconductor application. VET Energy inovimbisa epamusoro-mhando yeGaAs mawafer ane yunifomu ukobvu uye kushoma hurema, akakodzera kune dzakasiyana siyana dzinoda maitiro ekugadzira.

Aya 4 Inch GaAs Wafers anoenderana neakasiyana semiconductor zvinhu zvakaita seSi Wafer, SiC Substrate, SOI Wafer, uye SiN Substrate, zvichiita kuti ive inogoneka pakubatanidzwa mune akasiyana madhizaini ezvivakwa. Kunyangwe ichishandiswa kugadzirwa kweEpi Wafer kana padivi pekucheka-kumucheto zvinhu seGallium Oxide Ga2O3 uye AlN Wafer, ivo vanopa hwaro hwakavimbika hwechizvarwa chinotevera magetsi. Pamusoro pezvo, mawafer anowirirana zvizere neCassette-based handling system, kuve nechokwadi chekushanda kwakanaka mune zvese zvekutsvagisa uye yakakwirira-vhoriyamu yekugadzira nharaunda.

VET Energy inopa yakazara portfolio ye semiconductor substrates, kusanganisira Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, Gallium Oxide Ga2O3, uye AlN Wafer. Chigadzirwa chedu chakasiyana mutsara chinopa kune zvinodiwa zveakasiyana emagetsi maapplication, kubva kumagetsi emagetsi kuenda kuRF uye optoelectronics.

VET Energy inopa customizable GaAs wafers kuti asangane nezvako chaizvo zvaunoda, zvinosanganisira akasiyana doping mazinga, kutaridzika, uye kupera kwepasi. Chikwata chedu chehunyanzvi chinopa rutsigiro rwehunyanzvi uye mushure mekutengesa-sevhisi kuti uve nechokwadi chekubudirira kwako.

WAFERING SECIFICATIONS

*n-Pm=n-type Pm-Giredhi,n-Ps=n-type Ps-Giredhi,Sl=Semi-lnsulating

Item	8-Inch	6-Inch			4-inch
Item	nP	n-Pm	n-Mapisarema	SI	SI
TTV(GBIR)	≤6um	≤6um
Bow(GF3YFCD)-Absolute Value	≤15μm	≤15μm	≤25μm		≤15μm
Warp(GF3YFER)	≤25μm	≤25μm	≤40μm		≤25μm
LTV(SBIR) -10mmx10mm	<2μm
Wafer Edge	Beveling

SURFACE FINISH

*n-Pm=n-type Pm-Giredhi,n-Ps=n-type Ps-Giredhi,Sl=Semi-lnsulating

Item	8-Inch	6-Inch			4-inch
	nP	n-Pm	n-Mapisarema	SI	SI
Surface Finish	Kaviri divi Optical Polish, Si- Face CMP
SurfaceRoughness	(10um x 10um) Si-FaceRa≤0.2nm C-Face Ra≤ 0.5nm			(5umx5um) Si-Face Ra≤0.2nm C-Face Ra≤0.5nm
Edge Chips	Hapana Inobvumidzwa (kureba nehupamhi≥0.5mm)
Indents	Hapana Inobvumirwa
Makwara (Si-Face)	Uk.≤5,Kuwedzera Kureba≤0.5×wafer dhayamita	Uk.≤5,Kuwedzera Kureba≤0.5×wafer dhayamita			Uk.≤5,Kuwedzera Kureba≤0.5×wafer dhayamita
Mitswe	Hapana Inobvumirwa
Kusabatanidzwa kumucheto	3mm