O le mea moni o se auala lelei e faʻaleleia ai a tatou oloa ma fofo ma toe faʻaleleia. O la matou misiona e tatau ona tuʻuina atu oloa faʻapitoa ma fofo i tagata faʻatau e faʻaaoga ai se poto masani galue mo Wholesale OEM / ODM GaN-Basedepitaxial i luga o Sic Substrates 4′′, Matou te taulaʻi i le fausiaina o latou lava faʻailoga ma faʻatasi ai ma le tele o faʻamatalaga poto masani ma meafaigaluega muamua. . O a matou oloa e te taua ua ia te oe.
O le mea moni o se auala lelei e faʻaleleia ai a tatou oloa ma fofo ma toe faʻaleleia. O la matou misiona e tatau ona tuʻuina atu oloa faʻapitoa ma fofo i tagata faʻatau e faʻaaogaina se poto masani galue moSaina GaN Substrates ma GaN Film, Faatasi ai ma le lautele lautele, lelei lelei, tau talafeagai ma mamanu faʻalelei, oa tatou oloa e faʻaaogaina tele i le matagofie ma isi pisinisi. O a tatou oloa ma fofo e lauiloa lautele ma faʻatuatuaina e tagata faʻaoga ma e mafai ona faʻafetaui le suiga faifaipea o manaʻoga tau tamaoaiga ma agafesootai.
SiC coating graphite MOCVD Wafer carriers
O matou susceptors uma e faia i le maualuga-malosi isostatic graphite. Fa'amanuiaga mai le maualuga o le mama o tatou graphites - fa'atupuina fa'apitoa mo faiga lu'itau e pei o le epitaxy, fa'atupu tioata, fa'apipi'iina o le ion ma le fa'apipi'iina o le plasma, fa'apea fo'i ma le gaosiga o chips LED.
Fa'amatalaga o oloa
SiC coating of Graphite substrate mo Semiconductor talosaga e maua ai se vaega e sili atu le mama ma tetee atu i oxidizing atemosifia.
O le CVD SiC poʻo le CVI SiC o loʻo faʻaogaina i le Graphite o vaega faigofie pe lavelave mamanu. O le ufiufi e mafai ona faʻaoga i le mafiafia eseese ma i vaega tetele.
Compon
O faʻamanuiaga faʻapitoa o le matou SiC-coated graphite susceptors e aofia ai le mama maualuga, faʻapipiʻi tutusa ma se olaga sili ona lelei. E iai fo'i le maualuga o le kemikolo ma le mautu o le vevela.
Matou te faʻatumauina vavalalata vavalalata pe a faʻaogaina le SiC coating, faʻaaogaina machining maualuga-saʻo e faʻamautinoa ai se faʻamatalaga susceptor toniga. Matou te gaosia fo'i mea e fa'atatau i mea tau eletise lelei mo le fa'aogaina i faiga fa'avevela. O vaega uma ua mae'a o lo'o sau fa'atasi ma se tusi fa'amaonia mama ma le fua fa'atatau.
Talosaga:
Vaega:
· Lelei Fa'afefe Te'i Te'i
· Lelei Fa'aletino Tete'e Tete'e
· Tete'e Sili Vailaau Matagofie
· Mamalu Maualuga Maualuga
· Avanoa i Faiga Lavelave
· Fa'aaoga i lalo ole Oxidizing AtmosphereMeatotino masani o mea fa'avae kalafi:
E aliali mai le To'atele: | 1.85 g/cm3 |
Tete'e eletise: | 11 μΩm |
Malosi fa'afoliga: | 49 MPa (500kgf/cm2) |
Maa'a o le matafaga: | 58 |
Lefulefu: | <5ppm |
Amioga vevela: | 116 W/mK (100 kcal/mhr-℃) |
O le mea moni o se auala lelei e faʻaleleia ai a tatou oloa ma fofo ma toe faʻaleleia. O la matou misiona e tatau ona tuʻuina atu oloa faʻapitoa ma fofo i tagata faʻatau e faʻaaoga ai se poto masani galue mo Wholesale OEM / ODM GaN-Basedepitaxial i luga o Sic Substrates 4′′, Matou te taulaʻi i le fausiaina o latou lava faʻailoga ma faʻatasi ai ma le tele o faʻamatalaga poto masani ma meafaigaluega muamua. . O a matou oloa e te taua ua ia te oe.
OEM/ODM siiatoaSaina GaN Substrates ma GaN Film, Faatasi ai ma le lautele lautele, lelei lelei, tau talafeagai ma mamanu faʻalelei, oa tatou oloa e faʻaaogaina tele i le matagofie ma isi pisinisi. O a tatou oloa ma fofo e lauiloa lautele ma faʻatuatuaina e tagata faʻaoga ma e mafai ona faʻafetaui le suiga faifaipea o manaʻoga tau tamaoaiga ma agafesootai.