Ua i ai nei le matou aufaigaluega sili ona lelei e faʻatautaia fesili mai tagata faʻatau. O la matou sini o le "100% faʻatauga faʻatau e ala i a matou oloa poʻo auaunaga sili ona lelei, faʻatau atu tau & a matou auvaa auaunaga" ma maua le fiafia mai le lauiloa tele i tagata faʻatau. Faatasi ai ma le tele o falegaosimea, e mafai ona matou ofoina atu le tele o tau Faʻaitiitia GaN-Basedepitaxial i luga o Sic Substrates 4′′, Matou te faʻafeiloaʻi ma le faʻafeiloaʻi au pisinisi laiti mai soʻo se ituaiga olaga, faʻamoemoe e faʻavae pisinisi faauo ma felagolagomai e faʻafesoʻotaʻi ma oe ma maua. ose faamoemoe manumalo-manumalo.
Ua i ai nei le matou aufaigaluega sili ona lelei e faʻatautaia fesili mai tagata faʻatau. O la matou sini o le "100% faʻatauga faʻatau e ala i a matou oloa poʻo auaunaga sili ona lelei, faʻatau atu tau & a matou auvaa auaunaga" ma maua le fiafia mai le lauiloa tele i tagata faʻatau. Faatasi ai ma le tele o falegaosimea, e mafai ona matou ofoina atu le tele o mea eseeseSaina GaN Substrates ma GaN Film, Matou te tulimatai atu ma le faamaoni e galulue faʻatasi ma tagata faʻatau i le lalolagi atoa. Matou te talitonu e mafai ona matou faʻamalieina oe i a matou oloa maualuga ma auaunaga atoatoa. Matou te faʻafeiloaʻi ma le faʻafeiloaʻi tagata faʻatau e asiasi i la matou kamupani ma faʻatau a matou oloa.

SiC coating graphite MOCVD Wafer carriers

O matou susceptors uma e faia i le maualuga-malosi isostatic graphite. Fa'amanuiaga mai le maualuga o le mama o tatou graphites - fa'atupuina fa'apitoa mo faiga lu'itau e pei o le epitaxy, fa'atupu tioata, fa'apipi'iina o le ion ma le fa'apipi'iina o le plasma, fa'apea fo'i ma le gaosiga o chips LED.

Fa'amatalaga o oloa
SiC coating of Graphite substrate mo Semiconductor talosaga e maua ai se vaega e sili atu le mama ma tetee atu i oxidizing atemosifia.
O le CVD SiC poʻo le CVI SiC o loʻo faʻaogaina i le Graphite o vaega faigofie pe lavelave mamanu. O le ufiufi e mafai ona faʻaoga i le mafiafia eseese ma i vaega tetele.

Compon

O faʻamanuiaga faʻapitoa o le matou SiC-coated graphite susceptors e aofia ai le mama maualuga, faʻapipiʻi tutusa ma se olaga sili ona lelei. E iai fo'i le maualuga o le kemikolo ma le mautu o le vevela.

Matou te faʻatumauina vavalalata vavalalata pe a faʻaogaina le SiC coating, faʻaaogaina machining maualuga-saʻo e faʻamautinoa ai se faʻamatalaga susceptor toniga. Matou te gaosia fo'i mea e fa'atatau i mea tau eletise lelei mo le fa'aogaina i faiga fa'avevela. O vaega uma ua mae'a o lo'o sau fa'atasi ma se tusi fa'amaonia mama ma le fua fa'atatau.

Talosaga:

Vaega:
· Lelei Fa'afefe Te'i Te'i
· Lelei Fa'aletino Tete'e Tete'e
· Tete'e Sili Vailaau Matagofie
· Mamalu Maualuga Maualuga
· Avanoa i Faiga Lavelave
· Fa'aaoga i lalo ole Oxidizing AtmosphereMeatotino masani o mea fa'avae kalafi:

Ua i ai nei le matou aufaigaluega sili ona lelei e faʻatautaia fesili mai tagata faʻatau. O la matou sini o le "100% faʻatauga faʻatau e ala i a matou oloa poʻo auaunaga sili ona lelei, faʻatau atu tau & a matou auvaa auaunaga" ma maua le fiafia mai le lauiloa tele i tagata faʻatau. Faatasi ai ma le tele o falegaosimea, e mafai ona matou ofoina atu le tele o tau Faʻaitiitia GaN-Basedepitaxial i luga o Sic Substrates 4′′, Matou te faʻafeiloaʻi ma le faʻafeiloaʻi au pisinisi laiti mai soʻo se ituaiga olaga, faʻamoemoe e faʻavae pisinisi faauo ma felagolagomai e faʻafesoʻotaʻi ma oe ma maua. ose faamoemoe manumalo-manumalo.
Tau fa'aitiitiaSaina GaN Substrates ma GaN Film, Matou te tulimatai atu ma le faamaoni e galulue faʻatasi ma tagata faʻatau i le lalolagi atoa. Matou te talitonu e mafai ona matou faʻamalieina oe i a matou oloa maualuga ma auaunaga atoatoa. Matou te faʻafeiloaʻi ma le faʻafeiloaʻi tagata faʻatau e asiasi i la matou kamupani ma faʻatau a matou oloa.