O lenei 6 Inisi N Type SiC Wafer ua fa'ainisinia mo le fa'aleleia atili o le fa'atinoga i tulaga ogaoga, ma avea ai ma filifiliga lelei mo talosaga e mana'omia ai le malosi maualuga ma le vevela. O oloa autu e feso'ota'i ma lenei fa'atosina e aofia ai Si Wafer, SiC Substrate, SOI Wafer, ma SiN Substrate. O mea nei e fa'amautinoa ai le fa'atinoina lelei i le tele o faiga fa'agaio'iga semiconductor, e mafai ai ona fa'aogaina masini e lelei uma le malosi ma tumau.
Mo kamupani o lo'o galulue ma Epi Wafer, Gallium Oxide Ga2O3, Cassette, po'o AlN Wafer, VET Energy's 6 Inch N Type SiC Wafer e maua ai le fa'avae talafeagai mo le atina'eina o oloa fou. Pe i totonu o le eletise maualuga poʻo le mea aupito lata mai i tekinolosi RF, o nei wafers e faʻamautinoa ai le lelei o le amio ma le laʻititi o le vevela, tuleia tuaoi o le lelei ma le faʻatinoga.
FAAMATALAGA WAFERING
*n-Pm=n-ituaiga Pm-Vaega,n-Ps=n-ituaiga Ps-Vaega,Sl=Semi-lnsulating
Aitema | 8-Inisi | 6-Inisi | 4-Inisi | ||
nP | n-Pm | n-Sa | SI | SI | |
TTV(GBIR) | ≤6um | ≤6um | |||
Aufana(GF3YFCD)-Taua atoatoa | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
A'ai(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
LTV(SBIR)-10mmx10mm | <2μm | ||||
Wafer Edge | Fa'ata'oto |
FA'AI'U LELEI
*n-Pm=n-ituaiga Pm-Vaega,n-Ps=n-ituaiga Ps-Vaega,Sl=Semi-lnsulating
Aitema | 8-Inisi | 6-Inisi | 4-Inisi | ||
nP | n-Pm | n-Sa | SI | SI | |
Fa'ai'uga | Itulua Optical Polish, Si- Face CMP | ||||
Lau'ele'ele | (10um x 10um) Si-FaceRa≤0.2nm | (5umx5um) Si-Face Ra≤0.2nm | |||
Tipi Chips | Leai se Fa'ataga (umi ma le lautele≥0.5mm) | ||||
Indents | Leai se Fa'ataga | ||||
Manu'ese(Si-Fua'i) | Qty.≤5, Fa'aopoopo | Qty.≤5, Fa'aopoopo | Qty.≤5, Fa'aopoopo | ||
Ta'eta'ei | Leai se Fa'ataga | ||||
Tuusaunoaga Tupito | 3mm |