12 inisi Silicon Wafer mo Semiconductor Fabrication

Fa'amatalaga Puupuu:

VET Energy 12-inisi silicon wafers o mea autu autu ia o fale gaosi semiconductor. E fa'aogaina e le VET Energy le tekonolosi fa'atuputeleina o le CZ e fa'amautinoa ai o lo'o i ai i le wafers le tulaga lelei tioata, maualalo le fa'aletonu ma maualuga le tutusa, e maua ai se mea mautu ma fa'atuatuaina mo au masini semiconductor.


Fa'amatalaga Oloa

Faailoga o oloa

O le 12 inisi Silicon Wafer mo Semiconductor Fabrication ofo mai e le VET Energy ua fa'ainisinia e fa'afetaui tulaga sa'o mana'omia i le semiconductor industry. I le avea ai o se tasi o oloa taʻutaʻua i totonu o la matou laina, VET Energy faʻamautinoaina o loʻo gaosia nei meaʻai ma le saʻo saʻo, mama, ma le lelei o luga, ma faʻaogaina lelei mo faʻaoga semiconductor pito sili ona lata mai, e aofia ai microchips, sensors, ma masini faʻaeletoroni.

O lenei wafer e fetaui lelei ma le tele o mea e pei o Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, ma Epi Wafer, e maua ai le faʻaogaina lelei mo faiga faʻavae eseese. E le gata i lea, e fetaui lelei ma tekonolosi faʻapitoa e pei o Gallium Oxide Ga2O3 ma AlN Wafer, faʻamautinoa e mafai ona tuʻufaʻatasia i totonu o faʻaoga faʻapitoa. Mo le fa'agaioiga lelei, o le wafer e fa'amalieina mo le fa'aogaina i faiga fa'a-Kaseti fa'apitoa fa'apisinisi, fa'amautinoaina le fa'atinoina lelei i le gaosiga o semiconductor.

Ole laina ole oloa ole VET Energy e le fa'atapula'aina ile u'u masi fa'a'oloa. Matou te tuʻuina atu foʻi le tele o mea faʻapipiʻi semiconductor substrate, e aofia ai le SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, ma isi, faʻapea foʻi ma mea fou faʻapipiʻi semiconductor e pei o Gallium Oxide Ga2O3 ma AlN Wafer. O nei oloa e mafai ona faʻamalieina manaʻoga o tagata faʻatau eseese ile eletise eletise, leitio, masini ma isi matāʻupu.

Vaega o talosaga:
Tala fa'atatau:Fausiaina o tupe meataalo maualuga-faatinoga pei ole PPU ma le GPU.
meataalo manatua:Le gaosiga o meataalo manatua e pei ole DRAM ma le NAND Flash.
tupe meataalo analog:Fausiaina o meataalo analog e pei ole ADC ma le DAC.
Sensors:MEMS sensors, ata fa'atusa, ma isi.

O le VET Energy e tu'uina atu ai i tagata fa'atau ni fa'aputuga fa'apitoa, ma e mafai ona fa'avasegaina wafers ma fa'afete'ese'ese eseese, ese'ese mea okesene, eseese mafiafia ma isi fa'amatalaga e tusa ai ma mana'oga patino o tagata fa'atau. E le gata i lea, matou te tuʻuina atu foʻi le lagolago faʻapitoa faʻapolofesa ma le maeʻa ona faʻatau atu auaunaga e fesoasoani ai i tagata faʻatau e faʻamalieina le gaosiga o gaosiga ma faʻaleleia le gaosiga o oloa.

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FAAMATALAGA WAFERING

*n-Pm=n-ituaiga Pm-Vaega,n-Ps=n-ituaiga Ps-Vaega,Sl=Semi-lnsulating

Aitema

8-Inisi

6-Inisi

4-Inisi

nP

n-Pm

n-Sa

SI

SI

TTV(GBIR)

≤6um

≤6um

Aufana(GF3YFCD)-Taua atoatoa

≤15μm

≤15μm

≤25μm

≤15μm

A'ai(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

LTV(SBIR)-10mmx10mm

<2μm

Wafer Edge

Fa'ata'oto

FA'ATA'U LUGA

*n-Pm=n-ituaiga Pm-Vaega,n-Ps=n-ituaiga Ps-Vaega,Sl=Semi-lnsulating

Aitema

8-Inisi

6-Inisi

4-Inisi

nP

n-Pm

n-Sa

SI

SI

Fa'ai'uga

Itulua Optical Polish, Si- Face CMP

Lau'ele'ele

(10um x 10um) Si-FaceRa≤0.2nm
C-Face Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
C-Face Ra≤0.5nm

Tipi Chips

Leai se Fa'ataga (umi ma le lautele≥0.5mm)

Indents

Leai se Fa'ataga

Manu'ese(Si-Fua'i)

Qty.≤5, Fa'aopoopo
Length≤0.5×wafer diameter

Qty.≤5, Fa'aopoopo
Length≤0.5×wafer diameter

Qty.≤5, Fa'aopoopo
Length≤0.5×wafer diameter

Ta'eta'ei

Leai se Fa'ataga

Tuusaunoaga Tupito

3mm

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