Silicon Carbide (SiC) Epitaxial Wafer

Fa'amatalaga Puupuu:

Ole Silicon Carbide (SiC) Epitaxial Wafer mai le VET Energy o se mea e maualuga le faʻatinoga ua fuafuaina e faʻamalieina manaʻoga manaʻomia o le isi augatupulaga malosi ma masini RF. E fa'amautinoaina e le VET Energy o fa'ama'i epitaxial ta'itasi o lo'o gaosia lelei e tu'uina atu ai le fa'auluuluga o le vevela, malepelepe voltage, ma le fe'avea'i fe'avea'i, ma fa'amalieina mo fa'aoga e pei o ta'avale eletise, feso'ota'iga 5G, ma eletise eletise maualuga.


Fa'amatalaga Oloa

Faailoga o oloa

O le VET Energy silicon carbide (SiC) epitaxial wafer o se mea faʻapipiʻi semiconductor lautele lautele ma sili atu le maualuga o le teteʻeina o le vevela, maualuga taimi ma uiga maualuga. O se mea e sili ona lelei mo le augatupulaga fou o masini eletise eletise. E fa'aogaina e le VET Energy fa'atekonolosi epitaxial MOCVD e fa'atupuina ai siC ​​epitaxial layers i luga ole SiC substrates, fa'amautinoa le lelei lelei o le fa'atinoga ma le fa'amalieina ole wafer.

Ole matou Silicon Carbide (SiC) Epitaxial Wafer e ofoina atu le fetaui lelei ma le tele o mea semiconductor e aofia ai Si Wafer, SiC Substrate, SOI Wafer, ma SiN Substrate. Faatasi ai ma lona malosi epitaxial layer, e lagolagoina faiga alualu i luma e pei o le Epi Wafer tuputupu ae ma le tuufaatasia ma mea e pei o Gallium Oxide Ga2O3 ma AlN Wafer, faʻamautinoa le faʻaogaina tele i luga o tekinolosi eseese. Fuafuaina ina ia fetaui lelei ma faiga fa'atautaia o Kaseti fa'apitoa tau pisinisi, e fa'amautinoa ai le lelei ma le fa'agaoioia o galuega i totonu o si'osi'omaga fa'ata'otoga semiconductor.

Ole laina ole oloa ole VET Energy e le gata ile SiC epitaxial wafers. Matou te tuʻuina atu foʻi le tele o mea faʻapipiʻi semiconductor substrate, e aofia ai le Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, ma isi. Wafer, e faʻafetaui ai le manaʻoga eletise eletise i le lumanaʻi mo masini faʻatinoina maualuga.

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FAAMATALAGA WAFERING

*n-Pm=n-ituaiga Pm-Vaega,n-Ps=n-ituaiga Ps-Vaega,Sl=Semi-lnsulating

Aitema

8-Inisi

6-Inisi

4-Inisi

nP

n-Pm

n-Sa

SI

SI

TTV(GBIR)

≤6um

≤6um

Aufana(GF3YFCD)-Taua atoatoa

≤15μm

≤15μm

≤25μm

≤15μm

A'ai(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

LTV(SBIR)-10mmx10mm

<2μm

Wafer Edge

Fa'ata'oto

FA'AI'U LELEI

*n-Pm=n-ituaiga Pm-Vaega,n-Ps=n-ituaiga Ps-Vaega,Sl=Semi-lnsulating

Aitema

8-Inisi

6-Inisi

4-Inisi

nP

n-Pm

n-Sa

SI

SI

Fa'ai'uga

Itulua Optical Polish, Si- Face CMP

Lau'ele'ele

(10um x 10um) Si-FaceRa≤0.2nm
C-Face Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
C-Face Ra≤0.5nm

Tipi Chips

Leai se Fa'ataga (umi ma le lautele≥0.5mm)

Indents

Leai se Fa'ataga

Manu'ese(Si-Fua'i)

Qty.≤5, Fa'aopoopo
Length≤0.5×wafer diameter

Qty.≤5, Fa'aopoopo
Length≤0.5×wafer diameter

Qty.≤5, Fa'aopoopo
Length≤0.5×wafer diameter

Ta'eta'ei

Leai se Fa'ataga

Tuusaunoaga Tupito

3mm

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