Igice cya kabiri igice -Ibikoresho bya epitaxial ibikoresho

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Ibicuruzwa birambuye

Ibicuruzwa

Igice cya SiC Gishushanyije Igice cya kabiriis a urufunguzoibice bikoreshwa mubikorwa byo gukora semiconductor, cyane cyane kubikoresho bya epitaxial ya SiC.Dukoresha tekinoroji yatanzwe kugirango dukore igice cya kabiriubuziranenge bukabije,byizagutwikirauburinganiren'ubuzima bwiza bwa serivisi, Nka Nkaimiti myinshi irwanya imiti hamwe nubushyuhe bwumuriro.

Ingufu za VET ni iuruganda nyarwo rukora ibicuruzwa bya grafite na silicon karbide hamwe na CVD,irashobora gutangazitandukanyeibice byabigenewe bya semiconductor ninganda zifotora. Our tekinike tekinike iva mubigo byubushakashatsi byo murugo, birashobora gutanga ibisubizo byumwuga byinshikuri wewe.

Dukomeje guteza imbere inzira ziterambere kugirango dutange ibikoresho byateye imbere,nabakoze ikoranabuhanga ryemewe ryemewe, rishobora gutuma isano iri hagati yikingirizo hamwe na substrate ikomera kandi ntibikunze gutandukana.

Fibiryo byibicuruzwa byacu:

1. Ubushyuhe bwo hejuru bwa okiside irwanya 1700℃.
2. Isuku ryinshi kandiuburinganire bwumuriro
3. Kurwanya ruswa nziza cyane: aside, alkali, umunyu na reagent.
4. Gukomera cyane, hejuru yuzuye, ibice byiza.
5. Kuramba kumurimo muremure kandi biramba

CVD SiC薄膜基本物理性能 Ibyingenzi bifatika bya CVD SiCgutwikira
性质 / Umutungo	典型数值 / Agaciro gasanzwe
晶体结构 / Imiterere ya Crystal	FCC β icyiciro多晶，主要为（111 ）取向
密度 Ubucucike	3.21 g / cm³
硬度 / Gukomera	2500 维氏硬度（ 500g umutwaro）
晶粒大小 / Ibinyampeke SiZe	2 ~ 10 mm
纯度 / Ubuziranenge bwa Shimi	99.99995%
热容 / Ubushyuhe	640 J · kg^-1· K.^-1
升华温度 / Ubushyuhe bwo hejuru	2700 ℃
抗弯强度 / Imbaraga zoroshye	415 MPa RT amanota 4
杨氏模量 / Modulus	430 Gpa 4pt yunamye, 1300 ℃
导热系数 / ThermalImyitwarire	300W · m^-1· K.^-1
热膨胀系数 Kwagura Ubushyuhe (CTE)	4.5 × 10^-6K^-1