Ubwato bwa Silicon carbide wafer ni igikoresho cyikorera imitwaro ya wafer, ikoreshwa cyane cyane mugukwirakwiza izuba hamwe na semiconductor. Ifite ibiranga nko kurwanya kwambara, kurwanya ruswa, kurwanya ubushyuhe bwo hejuru, kurwanya ibisasu bya plasma, ubushobozi bwo gutwara ubushyuhe bwinshi, gutwara ubushyuhe bwinshi, gukwirakwiza ubushyuhe bwinshi, no gukoresha igihe kirekire bitari byoroshye kunama no guhindura. Isosiyete yacu ikoresha ibikoresho byinshi bya silicon karbide kugirango ibone ubuzima bwa serivisi kandi itanga ibishushanyo byabigenewe, harimo ubwato butandukanye bwa vertical na horizontal.
Urupapuro rwibikoresho
| 材料Ibikoresho | R-SiC |
| 使用温度Ubushyuhe bwo gukora (° C) | 1600 ° C (environment Oxidizing ibidukikije) 1700 ° C (还原气氛 Kugabanya ibidukikije) |
| SiC content Ibirimo bya SiC (%) | > 99 |
| 自由Si content Ibirimo Si kubuntu (%) | <0.1 |
| 体积密度Ubucucike bwinshi (g / cm3) | 2.60-2.70 |
| 气孔率Ikigaragara ni uko (%) | <16 |
| 抗压强度Imbaraga zo kumenagura (MPa) | > 600 |
| 常温抗弯强度Imbaraga zikonje (MPa) | 80-90 (20 ° C) |
| 高温抗弯强度Imbaraga zunamye zishyushye (MPa) | 90-100 (1400 ° C) |
| Co Coefficient yo kwagura ubushyuhe @ 1500 ° C (10-6 / ° C) | 4.70 |
| 导热系数Ubushyuhe bwumuriro @ 1200 ° C (W / m • K) | 23 |
| 杨氏模量Modulus (GPa) | 240 |
| 抗热震性Kurwanya ubushyuhe | 很好Nibyiza cyane |
Ningbo VET Ingufu Ikoranabuhanga Co, Ltd.ni uruganda rukora tekinoroji yibanda ku bicuruzwa no kugurisha ibikoresho byo mu rwego rwo hejuru, ibikoresho n'ikoranabuhangaharimografite, silicon karbide, ceramics, kuvura hejuru nibindi. Ibicuruzwa bikoreshwa cyane mumafoto yerekana amashanyarazi, semiconductor, ingufu nshya, metallurgie, nibindi ..
Itsinda ryacu tekinike riva mubigo byubushakashatsi byo murugo, birashobora gutanga ibisubizo byumwugakuri wewe.
Murakaza neza cyane gusura uruganda rwacu, reka tuganire kubindi biganiro!
