SiC Coated Graphite Base Carriers

Zonyamula za SiC Coated Graphite Base Zokhala ndi Chithunzi

Kufotokozera Kwachidule:

VET Energy SiC yokutidwa ndi graphite chonyamulira ndi chida chapamwamba chopangidwa kuti chipereke magwiridwe antchito osasinthika komanso odalirika pakanthawi yayitali. Ili ndi kukana kwabwino kwambiri kwa kutentha komanso kufananizidwa kwamafuta, kuyera kwakukulu, kukana kukokoloka, kupangitsa kuti ikhale yankho labwino kwambiri pakukonza mapulogalamu opaka utoto.

Malo Ochokera:China

Kapangidwe ka Crystal:FCCβ gawo

Kachulukidwe:3.21g/cm

Kuuma :2500 Vickers

Kukula Kwambewu:2 ~ 10μm

Chemical Purity:99.99995%

Kutentha Kwambiri :640J·kg-1·K-1

Kutentha kwa Sublimation:2700 ℃

Felexural Mphamvu:415 Mpa (RT 4-Point)

Young's Modulus :430 Gpa (4pt bend, 1300 ℃)

Kukula kwa Thermal (CTE):4.5 10-6K-1

Thermal conductivity:300 (W/MK)

Titumizireni imelo Tsitsani ngati PDF

Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

SiC yokutidwa ndi graphite chonyamulira ndi gawo lofunikira lomwe limagwiritsidwa ntchito popanga ma semiconductor osiyanasiyana. Timagwiritsa ntchito ukadaulo wathu wovomerezeka kuti tipange chonyamulira cha silicon carbide kukhala choyera kwambiri, kufananira bwino kwa zokutira komanso moyo wabwino kwambiri wantchito, komanso kukana kwamphamvu kwamankhwala komanso kukhazikika kwamafuta.

Zogulitsa zathu:

1. High kutentha makutidwe ndi okosijeni kukana mpaka 1700 ℃.
2. Kuyera kwakukulu ndi kufanana kwa kutentha
3. Kukana kwabwino kwa dzimbiri: asidi, alkali, mchere ndi organic reagents.
4. High kuuma, yaying'ono pamwamba, particles zabwino.
5. Moyo wautali wautumiki komanso wokhazikika

CVD SiC薄膜基本物理性能 Zida zoyambira za CVD SiCzokutira
性质 / Katundu	典型数值 / Mtengo Wodziwika
晶体结构 / Kapangidwe ka Crystal	FCC β gawo多晶，主要為（111）取向
密度 / Kuchulukana	3.21g/cm³
硬度 / Kuuma	2500 维氏硬度 (500g katundu)
晶粒大小 / Mbewu SiZe	2 ~ 10μm
纯度 / Chemical Purity	99.99995%
热容 / Kutentha Kwambiri	640 jkg^-1·K^-1
升华温度 / Sublimation Kutentha	2700 ℃
抗弯强度 / Flexural Mphamvu	415 MPa RT 4-mfundo
杨氏模量 / Young's Modulus	430 Gpa 4pt bend, 1300 ℃
导热系数 / ThermalConductivity	300Wm^-1·K^-1
热膨胀系数 Kukula kwa Matenthedwe (CTE)	4.5 × 10^-6K^-1

VET Energy ndi omwe amapanga makonda a graphite ndi silicon carbide okhala ndi zokutira zosiyanasiyana monga zokutira za SiC, zokutira za TaC, zokutira zagalasi za kaboni, zokutira kaboni za pyrolytic, ndi zina zambiri, zimatha kupereka magawo osiyanasiyana osinthika a semiconductor ndi mafakitale a photovoltaic.

Gulu lathu laukadaulo limachokera ku mabungwe apamwamba ofufuza zapakhomo, litha kukupatsirani mayankho aukadaulo.

Timapitirizabe kupanga njira zapamwamba zoperekera zipangizo zamakono, ndipo tapanga teknoloji yokhayo yovomerezeka, yomwe ingapangitse mgwirizano pakati pa zokutira ndi gawo lapansi kukhala lolimba komanso losavuta kusokoneza.

Takulandirani ndi manja awiri kuti mudzacheze fakitale yathu, tikambiranenso!