China Wopanga SiC yokutidwa Graphite MOCVD Epitaxy Susceptor

China Wopanga SiC wokutidwa Graphite MOCVD Epitaxy Susceptor Chithunzi Chowonetsedwa

Kufotokozera Kwachidule:

Kuyera <5ppm
‣ Kufanana kwabwino kwa doping
‣ Kuchulukana kwakukulu komanso kumamatira
‣ Good anti-corrosive and carbon resistance

‣ Kusintha mwaukadaulo
‣ Nthawi yotsogolera
‣ Kupereka kokhazikika
‣ Kuwongolera kwabwino komanso kuwongolera kosalekeza

Epitaxy ya GaN pa Sapphire(RGB / Mini / Micro LED);
Epitaxy ya GaN pa Si Substrate(UVC);
Epitaxy ya GaN pa Si Substrate(Chida Chamagetsi);
Epitaxy ya Si pa Si Substrate(Integrated dera);
Epitaxy ya SiC pa SiC Substrate(Substrate);
Epitaxy ya InP pa InP

Titumizireni imelo Tsitsani ngati PDF

Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

Mtengo wapamwamba wa MOCVD Susceptor Gulani pa intaneti ku China

Chophika chimafunika kudutsa masitepe angapo chisanayambe kugwiritsidwa ntchito pazida zamagetsi. Njira imodzi yofunikira ndi silicon epitaxy, momwe zopatsirana zimanyamulidwa pa graphite susceptors. Katundu ndi mtundu wa susceptors zimakhudza kwambiri mtundu wa epitaxial wosanjikiza wa wafer.

Pazigawo zowonda zamakanema monga epitaxy kapena MOCVD, VET imapereka zida zapamwamba kwambiri za graphite zomwe zimagwiritsidwa ntchito pothandizira magawo kapena "zowotcha". Pachimake cha ndondomekoyi, zipangizozi, ma epitaxy susceptors kapena nsanja za satellite za MOCVD, zimayikidwa koyamba ndi malo osungira:

Kutentha kwakukulu.
Vuto lalikulu.
Kugwiritsa ntchito ma precursors amphamvu a gaseous.
Zero kuipitsidwa, kusowa kwa peeling.
Kukana ma asidi amphamvu panthawi yoyeretsa

VET Energy ndi omwe amapanga makonda opanga ma graphite ndi silicon carbide okhala ndi zokutira za semiconductor ndi mafakitale a photovoltaic. Gulu lathu laukadaulo limachokera ku mabungwe apamwamba ofufuza zapakhomo, litha kukupatsirani mayankho aukadaulo.

Timapitirizabe kupanga njira zapamwamba zoperekera zipangizo zamakono, ndipo tapanga teknoloji yokhayo yovomerezeka, yomwe ingapangitse mgwirizano pakati pa zokutira ndi gawo lapansi kukhala lolimba komanso losavuta kusokoneza.

Zogulitsa zathu:

1. High kutentha makutidwe ndi okosijeni kukana mpaka 1700 ℃.
2. Kuyera kwakukulu ndi kufanana kwa kutentha
3. Kukana kwabwino kwa dzimbiri: asidi, alkali, mchere ndi organic reagents.
4. High kuuma, yaying'ono pamwamba, particles zabwino.
5. Moyo wautali wautumiki komanso wokhazikika

CVD SiC薄膜基本物理性能 Zida zoyambira za CVD SiCzokutira
性质 / Katundu	典型数值 / Mtengo Wodziwika
晶体结构 / Kapangidwe ka Crystal	FCC β gawo多晶，主要為（111）取向
密度 / Kuchulukana	3.21g/cm³
硬度 / Kuuma	2500 维氏硬度 (500g katundu)
晶粒大小 / Mbewu SiZe	2 ~ 10μm
纯度 / Chemical Purity	99.99995%
热容 / Kutentha Kwambiri	640 jkg^-1·K^-1
升华温度 / Sublimation Kutentha	2700 ℃
抗弯强度 / Flexural Mphamvu	415 MPa RT 4-mfundo
杨氏模量 / Young's Modulus	430 Gpa 4pt bend, 1300 ℃
导热系数 / ThermalConductivity	300Wm^-1·K^-1
热膨胀系数 Kukula kwa Matenthedwe (CTE)	4.5 × 10^-6K^-1