Ahịrị ngwaahịa VET Energy ejedebeghị na GaN na wafer SiC. Anyị na-enyekwa ihe dị iche iche nke semiconductor ihe, gụnyere Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, wdg. Na mgbakwunye, anyị na-arụsi ọrụ ike na-emepụta ihe ọhụrụ bandgap semiconductor, dị ka Gallium Oxide Ga2O3 na AlN. Wafer, iji gboo mkpa ụlọ ọrụ eletrọnịkị ike n'ọdịnihu maka ngwaọrụ arụmọrụ dị elu.
VET Energy na-enye ọrụ nhazi mgbanwe na-agbanwe agbanwe, ma nwee ike ịhazi GaN epitaxial layers nke ọkpụrụkpụ dị iche iche, ụdị doping dị iche iche, na nha wafer dị iche iche dịka mkpa ndị ahịa siri dị. Na mgbakwunye, anyị na-enyekwa nkwado teknụzụ ọkachamara na ọrụ ire ere iji nyere ndị ahịa aka ngwa ngwa mepụta ngwa elektrọn ike dị elu.
Nkọwapụta WAFERING
*n-Pm=n-ụdị Pm-Grade,n-Ps=n-ụdị Ps-Grade,Sl=Ọkara ala.
Ihe | 8-anụ ọhịa | 6-anụ ọhịa | 4-anụ ọhịa | ||
nP | n-Pm | n-Ps | SI | SI | |
TTV(GBIR) | ≤6um | ≤6um | |||
Ụta(GF3YFCD)-Uru zuru oke | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
LTV(SBIR) -10mmx10mm | <2μm | ||||
Wafer Edge | Beveling |
IMEcha elu elu
*n-Pm=n-ụdị Pm-Grade,n-Ps=n-ụdị Ps-Grade,Sl=Ọkara ala.
Ihe | 8-anụ ọhịa | 6-anụ ọhịa | 4-anụ ọhịa | ||
nP | n-Pm | n-Ps | SI | SI | |
Emecha elu elu | Akụkụ abụọ Optical Polish, Si- Face CMP | ||||
Ọdịdị elu | (10um x 10um) Si-FaceRa≤0.2nm | (5umx5um) Si-Face Ra≤0.2nm | |||
ibe ibe | Ọnweghị nke ekwenyere (ogologo na obosara≥0.5mm) | ||||
Indents | Ọnweghị nke ekwenyere | ||||
Scratches (Si-Ihu) | Qty.≤5,Nchịkọta | Qty.≤5,Nchịkọta | Qty.≤5,Nchịkọta | ||
Mgbawa | Ọnweghị nke ekwenyere | ||||
Mwepu ihu | 3mm |