Silicon Carbide Txheej Graphite Tais Phaj thiab Npog

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VET Energy silicon carbide txheej graphite phaj thiab npog yog cov khoom ua tau zoo tsim los muab kev ua tau zoo thiab txhim khu kev qha nyob rau lub sijhawm ntev. Nws muaj super zoo kub tsis kam thiab thermal uniformity, siab purity, yaig kuj, ua rau nws zoo meej tov rau wafer ua daim ntaub ntawv.

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VET ZogSilicon Carbide Txheej Graphite Tais, Phaj, thiab Npog yog engineered los xa cov kev ua tau zoo tshaj plaws, muab kev lag luam txhim khu kev qha thiab zoo ib yam dhau kev siv txuas ntxiv, ua rau nws yog qhov kev xaiv tseem ceeb rau wafer ua daim ntawv thov hauv kev lag luam semiconductor. Qhov kev ua haujlwm siabSilicon Carbide Txheej Graphite Phajboasts tshwj xeeb kub tsis kam, superior thermal uniformity, thiab zoo heev tshuaj stability, tshwj xeeb tshaj yog nyob rau hauv high-kub tej yam kev mob. Nws qhov kev tsim kho siab-purity, ua ke nrog kev tiv thaiv kev yaig siab, ua rau nws tseem ceeb rau qhov xav tau ib puag ncig xws liMOCVD susceptors.

Cov yam ntxwv tseem ceeb ntawm Silicon Carbide Txheej Graphite Tais, Phaj, thiab Npog

1. Kub-kub Oxidation Resistance:Withstands kub txog li 1700 ℃, ua kom nws ua tau zoo nyob rau hauv huab cua txias.

2. High Purity thiab Thermal Uniformity:Ua tib zoo purity siab thiab txawm tias tshav kub faib yog qhov tseem ceeb rau MOCVD daim ntawv thov.

3. Exceptional Corrosion Resistance:Resistant rau acids, alkalis, ntsev, thiab ntau yam organic reagents, ua kom muaj kev ruaj ntseg mus ntev hauv ntau qhov chaw.

4. High Hardness thiab Compact nto:Features ntom ntom nrog cov khoom zoo, txhim kho zuag qhia tag nrho durability thiab tsis kam hnav.

5. Extended Service Life:Engineered rau lub neej ntev, outperforming pasilicon carbide-coated graphite susceptorsnyob rau hauv hnyav semiconductor ua ib puag ncig.

CVD SiC薄膜基本物理性能 Basic Physical Properties ntawm CVD SiCtxheej
性质 / Khoom	典型数值 / Tus nqi
晶体结构 / Crystal Structure	FCC β theem多晶, 主要为(111) Ib
密度 / Ceev	3.21 g / cm³
硬度 / Hardness	2500 维氏硬度 (500g load)
晶粒大小 / Grain SiZe	2 ~ 10 hli
纯度 / Tshuaj Purity	99.99995%
Cov duab / Kub Muaj Peev Xwm	6 40j kg^-1· K^-1
升华温度 / Sublimation kub	2700 ℃
抗弯强度 / Flexural zog	415 MPa RT 4-point
杨氏模量 / Young's Modulus	430 Gpa 4pt khoov, 1300 ℃
导热系数 / KublKev coj ua	300 Wm^-1· K^-1
热膨胀系数 / Thermal Expansion (CTE)	4.5 × 10^-6K^-1

VET Energy's Expertise nyob rau hauv Customized Graphite thiab Silicon Carbide Solutions

Raws li cov chaw tsim khoom ntseeg siab, VET Energy tshwj xeeb hauv kev tsim cov graphite susceptors thiab silicon carbide txheej daws teeb meem. Peb muab ntau yam khoom tsim nyog rau kev lag luam semiconductor thiab photovoltaic, suav nrogSiC-coated graphite Cheebtsamzoo li cov tais, phaj, thiab npog. Peb cov khoom lineup kuj muaj ntau hom txheej txheej, xws liSiC txheej rau MOCVD, TAC txheej, glassy carbon txheej, thiab pyrolytic carbon txheej, kom ntseeg tau tias peb ua tau raws li qhov sib txawv xav tau ntawm kev lag luam high-tech.

Peb pab neeg ua haujlwm paub txog, suav nrog cov kws tshaj lij los ntawm cov chaw tshawb fawb sab saum toj hauv tebchaws, muab cov khoom siv dav dav rau cov neeg siv khoom. Peb txuas ntxiv kho peb cov txheej txheem siab heev, suav nrog cov cuab yeej tshwj xeeb patented uas txhim kho kev sib raug zoo ntawm silicon carbide txheej thiab graphite substrate, txo qhov kev pheej hmoo ntawm kev tshem tawm thiab txuas ntxiv cov khoom lag luam.

Kev siv thiab txiaj ntsig hauv Semiconductor Manufacturing

CovSilicon Carbide Txheej rau MOCVDua rau cov graphite susceptors zoo heev nyob rau hauv high-temperature, corrosive ib puag ncig. Txawm hais tias siv los ua graphite wafer cov cab kuj lossis lwm cov khoom siv MOCVD, cov silicon carbide-coated susceptors ua tau zoo tshaj qhov ua tau zoo thiab ua haujlwm tau zoo. Rau cov neeg nrhiav kev txhim khu kev qha hauv lubSiC-coated graphite susceptorkev lag luam, VET Energy's silicon carbide-coated graphite tais, phaj, thiab npog muab kev xaiv muaj zog thiab ntau yam uas ua tau raws li qhov xav tau nruj ntawm kev lag luam semiconductor.

Los ntawm kev tsom mus rau kev tshawb fawb txog cov khoom siv qib siab, VET Energy tau cog lus los xa cov kev ua haujlwm siab SiC-coated graphite cov kev daws teeb meem uas tsav kev tsim kho tshiab hauv kev ua haujlwm semiconductor thiab ua kom ntseeg tau tias kev ua tau zoo hauv txhua daim ntawv thov MOCVD.

VET Energy yog lub chaw tsim khoom tiag tiag ntawm cov khoom siv graphite thiab silicon carbide nrog cov txheej txheem sib txawv xws li SiC txheej, TaC txheej, iav carbon txheej, pyrolytic carbon txheej, thiab lwm yam., tuaj yeem muab ntau yam khoom siv rau kev lag luam semiconductor thiab photovoltaic.

Peb pab neeg ua haujlwm los ntawm cov tsev kawm tshawb fawb saum toj kawg nkaus hauv tebchaws, tuaj yeem muab cov ntaub ntawv tshaj lij tshaj lij rau koj.

Peb tsis tu ncua tsim cov txheej txheem siab heev los muab cov ntaub ntawv zoo tshaj plaws, thiab tau ua haujlwm tawm cov cuab yeej tshwj xeeb patented, uas tuaj yeem ua rau kev sib txuas ntawm cov txheej thiab cov substrate nruj dua thiab tsis tshua muaj detachment.

Zoo siab txais tos koj tuaj xyuas peb lub Hoobkas, cia peb tham ntxiv!