Lub hauv paus ntsiab lus ntawm PECVD graphite nkoj rau hnub ci cell (txheej) | VET Zog

Ua ntej tshaj plaws, peb yuav tsum paubPECVD(Plasma Enhanced Chemical Vapor Deposition). Plasma yog qhov kev siv zog ntawm thermal txav ntawm cov khoom molecules. Kev sib tsoo ntawm lawv yuav ua rau cov roj molecules yog ionized, thiab cov khoom yuav dhau los ua ib qho kev sib xyaw ntawm kev ywj pheej txav zoo ions, hluav taws xob thiab cov khoom nruab nrab uas cuam tshuam nrog ib leeg.

 

Nws tau kwv yees tias qhov cuam tshuam qhov poob ntawm lub teeb ntawm silicon nto yog siab li 35%. Cov yeeb yaj kiab los tiv thaiv kev cuam tshuam tuaj yeem txhim kho kev siv lub hnub ci teeb pom kev zoo los ntawm lub roj teeb ntawm tes, uas yuav pab ua kom cov photogenerated tam sim no ceev thiab yog li txhim kho cov kev hloov dua siab tshiab. Nyob rau tib lub sijhawm, hydrogen nyob rau hauv zaj duab xis passivates saum npoo ntawm lub roj teeb ntawm tes, txo cov nplaim recombination tus nqi ntawm lub emitter hlws ris, txo qhov tsaus ntuj tam sim no, tsub kom lub qhib Circuit Court voltage, thiab txhim kho lub photoelectric conversion efficiency. Qhov kub-kub instantaneous annealing nyob rau hauv cov txheej txheem hlawv-los ntawm kev tawg qee Si-H thiab NH daim ntawv cog lus, thiab tso tawm H ntxiv ntxiv dag zog rau lub roj teeb passivation.

 

Txij li cov khoom siv photovoltaic-qib silicon inevitably muaj ntau ntawm impurities thiab qhov tsis xws luag, cov neeg nqa khoom tsawg lub neej thiab qhov ntev diffusion hauv silicon raug txo, ua rau txo qis hauv kev hloov pauv ntawm lub roj teeb. H tuaj yeem cuam tshuam nrog qhov tsis xws luag lossis impurities hauv silicon, yog li hloov lub zog band hauv bandgap rau hauv valence band lossis conduction band.

 

1. PECVD Txoj Cai

PECVD system yog ib lub tshuab hluav taws xob sivPECVD graphite nkoj thiab high-frequency plasma exciters. Lub tshuab hluav taws xob plasma yog ntsia ncaj qha rau hauv nruab nrab ntawm cov phaj txheej kom hnov ​​​​mob nyob rau hauv qis siab thiab siab kub. Cov roj nquag siv yog silane SiH4 thiab ammonia NH3. Cov pa roj no ua rau ntawm silicon nitride khaws cia ntawm silicon wafer. Sib txawv refractive indices tuaj yeem tau los ntawm kev hloov pauv ntawm silane rau ammonia. Thaum lub sij hawm deposition txheej txheem, ib tug loj npaum li cas ntawm hydrogen atoms thiab hydrogen ions yog generated, ua rau cov hydrogen passivation ntawm lub wafer zoo heev. Nyob rau hauv lub tshuab nqus tsev thiab qhov kub thiab txias ntawm 480 degrees Celsius, ib txheej ntawm SixNy yog coated rau saum npoo ntawm silicon wafer los ntawm kev ua tusPECVD graphite nkoj.

 PECVD graphite nkoj

3SiH4+4NH3 → Si3N4+12H2

 

2. Si3N4

Cov xim ntawm Si3N4 zaj duab xis hloov nrog nws cov tuab. Feem ntau, qhov zoo tagnrho thickness yog nyob nruab nrab ntawm 75 thiab 80 nm, uas zoo nkaus li xiav tsaus. Lub refractive index ntawm Si3N4 zaj duab xis yog qhov zoo tshaj plaws ntawm 2.0 thiab 2.5. Cawv feem ntau yog siv los ntsuas nws qhov ntsuas qhov taw qhia.

Cov txiaj ntsig zoo ntawm qhov chaw ua haujlwm, kev ua haujlwm zoo ntawm optical anti-reflection kev ua tau zoo (thickness refractive Performance index sib piv), cov txheej txheem kub tsis tshua muaj (zoo txo ​​cov nqi), thiab cov H ions generated passivate silicon wafer nto.

 

3. Cov teeb meem tshwm sim hauv kev cob qhia txheej txheej

Zaj duab xis thickness: 

Lub sij hawm deposition txawv rau txawv film thicknesses. Lub sij hawm deposition yuav tsum tsim nyog nce los yog txo raws li cov xim ntawm txheej. Yog hais tias zaj duab xis yog dawb, lub sij hawm deposition yuav tsum tau txo. Yog hais tias nws yog reddish, nws yuav tsum tau tsim nyog nce. Txhua lub nkoj ntawm cov yeeb yaj kiab yuav tsum tau lees paub tag nrho, thiab cov khoom lag luam tsis raug tso cai kom ntws mus rau cov txheej txheem tom ntej. Piv txwv li, yog tias cov txheej txheem tsis zoo, xws li cov xim me ntsis thiab cov dej tsis zoo, feem ntau ntawm cov xim dawb, xim txawv, thiab cov xim dawb ntawm cov kab ntau lawm yuav tsum tau muab tshem tawm hauv lub sijhawm. Qhov chaw ntxuav hniav dawb yog feem ntau tshwm sim los ntawm cov tuab silicon nitride zaj duab xis, uas tuaj yeem hloov kho los ntawm kev kho cov zaj duab xis deposition sij hawm; Cov xim sib txawv ntawm cov yeeb yaj kiab feem ntau yog tshwm sim los ntawm kev thaiv roj, quartz tube to, microwave tsis ua haujlwm, thiab lwm yam.; cov pob dawb yog feem ntau tshwm sim los ntawm cov me me dub hauv cov txheej txheem dhau los. Kev saib xyuas ntawm qhov cuam tshuam, qhov ntsuas qhov ntsuas tsis zoo, thiab lwm yam, kev nyab xeeb ntawm cov pa roj tshwj xeeb, thiab lwm yam.

 

Cov pob dawb ntawm qhov chaw:

PECVD yog cov txheej txheem tseem ceeb hauv lub hnub ci hlwb thiab qhov taw qhia tseem ceeb ntawm kev ua haujlwm ntawm lub tuam txhab lub hnub ci. Cov txheej txheem PECVD feem ntau tsis khoom, thiab txhua pawg ntawm cov hlwb yuav tsum tau saib xyuas. Muaj ntau txheej txheej rauv taws, thiab txhua lub raj feem ntau muaj ntau pua lub hlwb (nyob ntawm cov khoom siv). Tom qab hloov cov txheej txheem tsis, lub voj voog pov thawj yog ntev. Txheej thev naus laus zis yog thev naus laus zis uas tag nrho kev lag luam photovoltaic txuas nrog qhov tseem ceeb heev. Kev ua haujlwm ntawm lub hnub ci hlwb tuaj yeem txhim kho los ntawm kev txhim kho txheej txheej txheej txheem. Nyob rau hauv lub neej yav tom ntej, solar cell nto technology yuav dhau los ua ib qho kev ua haujlwm theoretical ntawm lub hnub ci.


Post lub sij hawm: Dec-23-2024
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