SiC Txheej Graphite MOCVD Wafer Carriers Susceptors

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VET Energy SiC Coated MOCVD Susceptor rau Epitaxial Loj hlob yog cov khoom lag luam ua tau zoo tsim los muab kev ua tau zoo thiab txhim khu kev qha nyob rau lub sijhawm ntev. Nws muaj super zoo kub tsis kam thiab thermal uniformity, siab purity, yaig kuj, ua rau nws zoo meej tov rau wafer ua daim ntaub ntawv.

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SiC txheej graphite MOCVD Wafer nqa / susceptor

Tag nrho peb cov susceptors yog ua los ntawm high-strength isostatic graphite. Tau txais txiaj ntsig los ntawm kev ua siab dawb huv ntawm peb cov graphites - tsim tshwj xeeb rau cov txheej txheem nyuaj xws li epitaxy, siv lead ua loj hlob, ion implantation thiab plasma etching, nrog rau kev tsim cov chips LED.

Feature ntawm peb cov khoom:

1. Kub kub oxidation tsis kam mus txog 1700 ℃.
2. High purity thiab thermal uniformity
3. Zoo heev corrosion kuj: acid, alkali, ntsev thiab organic reagents.
4. High hardness, compact nto, zoo hais.
5. Lub neej ua haujlwm ntev dua thiab ruaj khov dua

CVD SiC薄膜基本物理性能 Basic Physical Properties ntawm CVD SiCtxheej
性质 / Khoom	典型数值 / Tus nqi
晶体结构 / Crystal Structure	FCC β theem多晶, 主要为(111) Ib
密度 / Ceev	3.21 g / cm³
硬度 / Hardness	2500 维氏硬度 (500g load)
晶粒大小 / Grain SiZe	2 ~ 10 hli
纯度 / Tshuaj Purity	99.99995%
Cov duab / Kub Muaj Peev Xwm	6 40j kg^-1· K^-1
升华温度 / Sublimation kub	2700 ℃
抗弯强度 / Flexural zog	415 MPa RT 4-point
杨氏模量 / Young's Modulus	430 Gpa 4pt khoov, 1300 ℃
导热系数 / KublKev coj ua	300 Wm^-1· K^-1
热膨胀系数 / Thermal Expansion (CTE)	4.5 × 10^-6K^-1

VET Energy yog lub chaw tsim khoom tiag tiag ntawm cov khoom siv graphite thiab silicon carbide nrog cov txheej txheem sib txawv xws li SiC txheej, TaC txheej, iav carbon txheej, pyrolytic carbon txheej, thiab lwm yam., tuaj yeem muab ntau yam khoom siv rau kev lag luam semiconductor thiab photovoltaic.

Peb pab neeg ua haujlwm los ntawm cov tsev kawm tshawb fawb saum toj kawg nkaus hauv tebchaws, tuaj yeem muab cov ntaub ntawv tshaj lij tshaj lij rau koj.

Peb tsis tu ncua tsim cov txheej txheem siab heev los muab cov ntaub ntawv zoo tshaj plaws, thiab tau ua haujlwm tawm cov cuab yeej tshwj xeeb patented, uas tuaj yeem ua rau kev sib txuas ntawm cov txheej thiab cov substrate nruj dua thiab tsis tshua muaj detachment.

Zoo siab txais tos koj tuaj xyuas peb lub Hoobkas, cia peb tham ntxiv!