Tuam Tshoj Chaw tsim tshuaj paus SiC Coated Graphite MOCVD Epitaxy Susceptor

Lus piav qhia luv luv:

Purity <5ppm
‣ Zoo doping uniformity
‣ High ceev thiab adhesion
‣ Zoo tiv thaiv corrosive thiab carbon resistant

‣ Kev kho kom haum xeeb
‣ Lub sijhawm luv luv
‣ Kev muab khoom ruaj khov
‣ Kev tswj kom zoo thiab kev txhim kho txuas ntxiv

Epitaxy ntawm GaN ntawm Sapphire(RGB / Mini / Micro LED);
Epitaxy ntawm GaN ntawm Si Substrate(UVC);
Epitaxy ntawm GaN ntawm Si Substrate(Cov Khoom Siv Hluav Taws Xob);
Epitaxy ntawm Si ntawm Si Substrate(Integrated Circuit Court);
Epitaxy ntawm SiC ntawm SiC Substrate(Substrate);
Epitaxy ntawm InP ntawm InP

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Product Detail

Khoom cim npe

Zoo siab MOCVD Susceptor Yuav online hauv Suav teb

Lub wafer yuav tsum dhau los ntawm ob peb kauj ruam ua ntej nws npaj siv rau hauv cov khoom siv hluav taws xob. Ib txheej txheem tseem ceeb yog silicon epitaxy, uas cov wafers nqa ntawm graphite susceptors. Cov khoom thiab qhov zoo ntawm cov susceptors muaj qhov cuam tshuam tseem ceeb ntawm qhov zoo ntawm wafer's epitaxial txheej.

Rau nyias zaj duab xis deposition theem xws li epitaxy los yog MOCVD, VET khoom siv ultra-ntshiab graphiteequipment siv los txhawb substrates los yog "wafers". Ntawm qhov tseem ceeb ntawm cov txheej txheem, cov cuab yeej no, epitaxy susceptors lossis satellite platforms rau MOCVD, yog thawj zaug rau qhov chaw tso nyiaj:

Kub kub.
Lub tshuab nqus tsev siab.
Kev siv cov aggressive gaseous precursors.
Zero contamination, tsis muaj peeling.
Tiv thaiv kom muaj zog acids thaum lub sijhawm ntxuav

VET Energy yog lub chaw tsim khoom tiag tiag ntawm cov khoom siv graphite thiab silicon carbide nrog txheej rau semiconductor thiab photovoltaic kev lag luam. Peb pab neeg ua haujlwm los ntawm cov tsev kawm tshawb fawb sab saum toj hauv tebchaws, tuaj yeem muab cov ntaub ntawv tshaj lij tshaj lij rau koj.

Peb tsis tu ncua tsim cov txheej txheem siab heev los muab cov ntaub ntawv zoo tshaj plaws, thiab tau ua haujlwm tawm cov cuab yeej tshwj xeeb patented, uas tuaj yeem ua rau kev sib txuas ntawm cov txheej thiab cov substrate nruj dua thiab tsis tshua muaj detachment.

Feature ntawm peb cov khoom:

1. Kub kub oxidation tsis kam mus txog 1700 ℃.
2. High purity thiab thermal uniformity
3. Zoo heev corrosion kuj: acid, alkali, ntsev thiab organic reagents.
4. High hardness, compact nto, zoo hais.
5. Lub neej ua haujlwm ntev dua thiab ruaj khov dua

CVD SiC薄膜基本物理性能 Basic Physical Properties ntawm CVD SiCtxheej
性质 / Khoom	典型数值 / Tus nqi
晶体结构 / Crystal Structure	FCC β theem多晶, 主要为(111) Ib
密度 / Ceev	3.21 g / cm³
硬度 / Hardness	2500 维氏硬度 (500g load)
晶粒大小 / Grain SiZe	2 ~ 10 hli
纯度 / Tshuaj Purity	99.99995%
Cov duab / Kub Muaj Peev Xwm	6 40j kg^-1· K^-1
升华温度 / Sublimation kub	2700 ℃
抗弯强度 / Flexural zog	415 MPa RT 4-point
杨氏模量 / Young's Modulus	430 Gpa 4pt khoov, 1300 ℃
导热系数 / KublKev coj ua	300 Wm^-1· K^-1
热膨胀系数 / Thermal Expansion (CTE)	4.5 × 10^-6K^-1