vet-china kom ntseeg tau tias txhua qhov DurableSilicon Carbide Wafer Handling Paddlemuaj kev ua tau zoo heev thiab durability. Qhov no silicon carbide wafer tuav paddle siv cov txheej txheem tsim khoom siab heev los xyuas kom meej tias nws cov qauv kev ruaj ntseg thiab kev ua haujlwm tseem nyob hauv qhov kub thiab txias thiab tshuaj lom neeg corrosion. Qhov kev tsim tshiab no muab kev txhawb nqa zoo rau kev tuav cov semiconductor wafer, tshwj xeeb tshaj yog rau cov haujlwm ua haujlwm siab.
SiC Cantilever Paddleyog cov khoom siv tshwj xeeb siv hauv cov khoom siv hluav taws xob semiconductor xws li oxidation rauv, diffusion furnace, thiab annealing rauv, qhov tseem ceeb yog siv rau wafer loading thiab unloading, txhawb nqa thiab thauj wafers thaum lub sij hawm kub txheej txheem.
Cov qauv tsimntawmSiCcantileverpaddle: ib lub cantilever qauv, tsau ntawm ib kawg thiab dawb ntawm lwm yam, feem ntau muaj lub tiaj tus thiab paddle-zoo li tsim.
Ua haujlwmplusntawmSiCcantileverpaddle:
Lub cantilever paddle tuaj yeem txav mus los lossis rov qab mus rau hauv lub qhov cub chamber, nws tuaj yeem siv los txav wafers los ntawm chaw thau khoom mus rau qhov chaw ua haujlwm, lossis tawm ntawm qhov chaw ua haujlwm, txhawb nqa thiab ruaj khov wafers thaum lub sijhawm ua haujlwm kub.
| Lub cev muaj zog ntawm Recrystalized Silicon Carbide | |
| Khoom | Tus nqi |
| Ua haujlwm kub (°C) | 1600 ° C (nrog oxygen), 1700 ° C (txo ib puag ncig) |
| SiC cov ntsiab lus | > 99.96% |
| Dawb Si cov ntsiab lus | <0.1% |
| Qhov ntom ntom | 2.60-2.70 g / cm33 |
| Pom tseeb porosity | <16% |
| Compression zog | > 600 MPa |
| Txias dabtsi yog khoov zog | 80-90 MPa (20 ° C) |
| Kub dabtsi yog khoov zog | 90-100 MPa (1400 ° C) |
| Thermal expansion @ 1500 ° C | 4.70 10-6/°C |
| Thermal conductivity @ 1200 ° C | 23 W/m•K |
| Elastic modulus | 240 GPa |
| Thermal shock tsis kam | Zoo heev |
