Vet-ChinaSilicon Carbide CeramicTxheej yog cov txheej txheem tiv thaiv kev ua haujlwm siab ua los ntawm cov tawv tawv heev thiab hnav-resistantsilicon carbide (SiC)cov khoom, uas muab cov tshuaj zoo heev corrosion kuj thiab high-temperature stability. Cov yam ntxwv no yog qhov tseem ceeb hauv kev tsim khoom semiconductor, yog liSilicon Carbide Ceramic Txheejyog dav siv nyob rau hauv cov khoom tseem ceeb ntawm semiconductor manufacturing khoom.
Lub luag haujlwm tshwj xeeb ntawm Vet-ChinaSilicon Carbide CeramicTxheej nyob rau hauv semiconductor ntau lawm yog raws li nram no:
Txhim kho cov khoom siv durability:Silicon Carbide Ceramic Txheej Silicon Carbide Ceramic Txheej muab kev tiv thaiv zoo heev rau cov khoom siv hluav taws xob semiconductor nrog nws cov hardness siab heev thiab hnav tsis kam. Tshwj xeeb tshaj yog nyob rau hauv high-temperature thiab corrosive txheej txheem ib puag ncig, xws li tshuaj vapor deposition (CVD) thiab plasma etching, txheej yuav zoo tiv thaiv lub nto ntawm cov khoom los ntawm kev puas tsuaj los ntawm chemical erosion los yog lub cev hnav, yog li ua kom lub neej ntev kev pab cuam. cov cuab yeej siv thiab txo qis qis los ntawm kev hloov pauv thiab kho tsis tu ncua.
Txhim kho txheej txheem purity:Nyob rau hauv cov txheej txheem tsim khoom semiconductor, kev sib kis me me tuaj yeem ua rau cov khoom tsis raug. Cov tshuaj inertness ntawm Silicon Carbide Ceramic Txheej tso cai rau nws nyob ruaj khov nyob rau hauv huab cua txias, tiv thaiv cov khoom los ntawm kev tso cov khoom los yog impurities, yog li xyuas kom meej ib puag ncig purity ntawm tus txheej txheem. Qhov no yog ib qho tseem ceeb tshwj xeeb rau kev tsim cov kauj ruam uas yuav tsum tau muaj kev ua haujlwm siab thiab kev huv huv, xws li PECVD thiab ion implantation.
Optimize thermal tswj:Nyob rau hauv high-temperature semiconductor ua, xws li ceev ceev thermal ua (RTP) thiab oxidation txheej txheem, lub siab thermal conductivity ntawm Silicon Carbide Ceramic Txheej enables uniform kub faib nyob rau hauv cov khoom. Qhov no yuav pab txo cov kev ntxhov siab thermal thiab cov khoom deformation los ntawm qhov kub thiab txias, yog li txhim kho cov khoom tsim khoom raug thiab sib xws.
Txhawb cov txheej txheem complex ib puag ncig:Hauv cov txheej txheem uas xav tau kev tswj hwm huab cua, xws li ICP etching thiab PSS etching cov txheej txheem, kev ruaj ntseg thiab oxidation tsis kam ntawm Silicon Carbide Ceramic Txheej kom ntseeg tau tias cov cuab yeej tswj kev ruaj ntseg hauv kev ua haujlwm ntev, txo qhov kev pheej hmoo ntawm cov khoom degradation los yog cov khoom puas. rau ib puag ncig kev hloov pauv.
CVD SiC薄膜基本物理性能 Basic Physical Properties ntawm CVD SiCtxheej | |
性质 / Khoom | 典型数值 / Tus nqi |
晶体结构 / Crystal Structure | FCC β theem多晶, 主要为(111) Ib |
密度 / Ceev | 3.21 g / cm³ |
硬度 / Hardness | 2500 维氏硬度 (500g load) |
晶粒大小 / Grain SiZe | 2 ~ 10 hli |
纯度 / Tshuaj Purity | 99.99995% |
Cov duab / Kub Muaj Peev Xwm | 6 40j kg-1· K-1 |
升华温度 / Sublimation kub | 2700 ℃ |
抗弯强度 / Flexural zog | 415 MPa RT 4-point |
杨氏模量 / Young's Modulus | 430 Gpa 4pt khoov, 1300 ℃ |
导热系数 / KublKev coj ua | 300 Wm-1· K-1 |
热膨胀系数 / Thermal Expansion (CTE) | 4.5 × 10-6K-1 |
Zoo siab txais tos koj tuaj xyuas peb lub Hoobkas, cia peb tham ntxiv!