Hāʻawi ʻo vet-china i ka Vertical Column Wafer Boat & Pedestal, kahi hopena piha no ka hana semiconductor holomua. Hoʻolālā ʻia me ka pololei pololei, hāʻawi kēia ʻōnaehana lawelawe wafer i ka paʻa ʻole a me ka alignment, koʻikoʻi no nā kaiapuni hana kiʻekiʻe.
Hoʻokumu ʻia ka Vertical Column Wafer Boat & Pedestal me nā mea waiwai e hōʻoiaʻiʻo ana i ka paʻa ʻana o ka wela a me ke kū ʻana i ka corrosion kemika, e kūpono ana i nā kaʻina hana semiconductor koi nui. Kākoʻo kona hoʻolālā kolamu kū hoʻokahi i nā wafers, e hōʻemi ana i ka pilikia o ka misalignment a me ka pōʻino i ka wā o ka lawe ʻana a me ka hana ʻana.
Me ka hoʻohui ʻana o ka Vertical Column Wafer Boat & Pedestal o vet-china, hiki i nā mea hana semiconductor ke manaʻo i ka hoʻomaikaʻi ʻana i ka throughput, hoʻemi ʻia ka manawa haʻahaʻa, a me ka hoʻonui ʻana i ka huahana. Ua kūpono kēia ʻōnaehana me nā ʻano nui wafer a me nā hoʻonohonoho, hāʻawi i ka maʻalahi a me ka scalability no nā pono hana like ʻole.
ʻO ka hoʻokō o vet-china i ka maikaʻi e hōʻoia i kēlā me kēia Vertical Column Wafer Boat & Pedestal e hoʻokō i nā kūlana kiʻekiʻe o ka maikaʻi a me ka hana. Ma ke koho ʻana i kēia hopena ʻokiʻoki, hoʻopukapuka ʻoe i kahi ala e hiki mai ana i ka wā e hoʻohana ai i ka wafer e hoʻonui ai i ka pono a me ka hilinaʻi i ka hana semiconductor.
Nā waiwai o ka carbide silikona i hoʻopaʻa hou ʻia
ʻO ka carbide silicon recrystallized (R-SiC) he mea hana kiʻekiʻe me ka paʻakikī lua wale nō i ke daimana, i hana ʻia ma kahi wela kiʻekiʻe ma luna o 2000 ℃. Mālama ia i nā waiwai maikaʻi he nui o SiC, e like me ka ikaika wela kiʻekiʻe, ke kūpaʻa ʻana i ka corrosion ikaika, ke kūpaʻa oxidation maikaʻi loa, ke kūpaʻa haʻalulu maikaʻi a pēlā aku.
● ʻO nā mea mechanical maikaʻi loa. ʻO ka carbide silicon recrystallized he kiʻekiʻe aʻe ka ikaika a me ka ʻoʻoleʻa ma mua o ke kalapona kalapona, ke kūpaʻa hopena kiʻekiʻe, hiki ke pāʻani i ka hana maikaʻi i nā wahi wela wela, hiki ke pāʻani i ka hana counterbalance maikaʻi i nā ʻano kūlana. Eia kekahi, loaʻa iā ia ka maʻalahi maikaʻi a ʻaʻole maʻalahi i ka pōʻino e ka hoʻolōʻihi ʻana a me ke kulou ʻana, kahi e hoʻomaikaʻi nui ai i kāna hana.
● Kiʻekiʻe corrosion kū'ē. ʻO ka carbide silicon recrystallized he kiʻekiʻe ka corrosion kū'ē i nāʻano media likeʻole, hiki ke pale i ka erosion o nāʻano media corrosive, hiki ke mālama i kona mau mea mechanical no ka manawa lōʻihi, he paʻa ikaika, iʻoi aku ka lōʻihi o ke ola. Eia kekahi, loaʻa iā ia ka paʻa wela maikaʻi, hiki ke hoʻololi i kekahi ʻano o nā loli wela, hoʻomaikaʻi i kāna hopena noi.
● ʻAʻole e emi ka sintering. No ka emi ʻole o ke kaʻina hana sintering, ʻaʻohe koʻikoʻi koena e hoʻoneʻe i ka deformation a i ʻole ka haki ʻana o ka huahana, a hiki ke hoʻomākaukau ʻia nā ʻāpana me nā ʻano paʻakikī a me ka pololei kiʻekiʻe.
重结晶碳化硅物理特性 Nā waiwai kino o Recrystallized Silicon Carbide | |
性质 / Waiwai | 典型数值 / Waiwai maʻamau |
使用温度/ Mahana hana (°C) | 1600°C (me ka oxygen), 1700°C (hoemi kaiapuni) |
SiC含量/ maʻiʻo SiC | > 99.96% |
自由Si含量/ Maikaʻi Si manuahi | < 0.1% |
体积密度/ʻAno nui | 2.60-2.70 g/cm3 |
气孔率/ ʻIke ʻia ka porosity | < 16% |
抗压强度/ Ka ikaika hoʻoemi | > 600MPa |
常温抗弯强度/Ka ikaika kulou anu | 80-90 MPa (20°C) |
高温抗弯强度Ka ikaika piko wela | 90-100 MPa (1400°C) |
热膨胀系数/ Hoʻonui wela @1500°C | 4.70 10-6/°C |
导热系数/ʻO ka wela wela @1200°C | 23W/m•K |
杨氏模量/ Modulus elastic | 240 GPa |
抗热震性/ Ke pale ʻana i ka haʻalulu wela | Maikaʻi loa |
ʻO VET Energy ka kamea hana maoli o ka graphite maʻamau a me nā huahana silicon carbide me ka uhi CVD,hiki ke hoolakoʻokoʻanā ʻāpana i hana ʻia no ka semiconductor a me ka ʻoihana photovoltaic. OʻO kāu hui ʻenehana mai nā keʻena noiʻi kūloko kiʻekiʻe, hiki ke hāʻawi i nā ʻoihana ʻoihana ʻoi aku ka nuināu.
Hoʻomau mau mākou i nā kaʻina hana kiʻekiʻe e hāʻawi i nā mea ʻoi aku ka holomua,aUa hana ʻo ia i kahi ʻenehana patented kūʻokoʻa, hiki iā ia ke hana i ka hoʻopaʻa ʻana ma waena o ka uhi a me ka substrate i ʻoi aku ka paʻa a emi ʻole i ka wehe.
CVD SiC薄膜基本物理性能 Nā waiwai kino kumu o CVD SiCka uhi ʻana | |
性质 / Waiwai | 典型数值 / Waiwai maʻamau |
晶体结构 / Hoʻomoe Crystal | Māhele FCC β多晶,主要为(111)取向 |
密度 / Paʻa | 3.21 g/cm³ |
硬度 / Oolea | 2500 维氏硬度(500g load) |
晶粒大小 / ʻAiʻa palaoa | 2~10μm |
纯度 / Maemae Kemika | 99.99995% |
热容 / Hikina Wela | 640 J·kg-1·K-1 |
升华温度 / Kaumaha Sublimation | 2700 ℃ |
抗弯强度 / Ka Ikaika Pilikia | 415 MPa RT 4-point |
杨氏模量 / 'Ōpio's Modulus | 430 Gpa 4pt piko, 1300 ℃ |
导热系数 / ThermalʻO ka hoʻokō | 300W·m-1·K-1 |
热膨胀系数 / Hoʻonui wela (CTE) | 4.5×10-6K-1 |
Hoʻokipa maikaʻi iā ʻoe e kipa i kā mākou hale hana, e kūkākūkā hou kāua!