Waa Wafer Column Vertical & Pedestal

ʻO ka wehewehe pōkole:

Hāʻawi ka Vertical Column Wafer Boat & Pedestal mai vet-china i ke kūpaʻa a me ka pololei i ka lawelawe ʻana i ka wafer no ka hana semiconductor. Me ka hoʻolālā kiʻekiʻe o vet-china, hōʻoia kēia ʻōnaehana i ka alignment maikaʻi loa a me ka paʻa paʻa, hoʻonui i ka pono o ka hana a hōʻemi i ka pōʻino wafer.


Huahana Huahana

Huahana Huahana

Hāʻawi ʻo vet-china i ka Vertical Column Wafer Boat & Pedestal, kahi hopena piha no ka hana semiconductor holomua. Hoʻolālā ʻia me ka pololei pololei, hāʻawi kēia ʻōnaehana lawelawe wafer i ka paʻa ʻole a me ka alignment, koʻikoʻi no nā kaiapuni hana kiʻekiʻe.

Hoʻokumu ʻia ka Vertical Column Wafer Boat & Pedestal me nā mea waiwai e hōʻoiaʻiʻo ana i ka paʻa ʻana o ka wela a me ke kū ʻana i ka corrosion kemika, e kūpono ana i nā kaʻina hana semiconductor koi nui. Kākoʻo kona hoʻolālā kolamu kū hoʻokahi i nā wafers, e hōʻemi ana i ka pilikia o ka misalignment a me ka pōʻino i ka wā o ka lawe ʻana a me ka hana ʻana.

Me ka hoʻohui ʻana o ka Vertical Column Wafer Boat & Pedestal o vet-china, hiki i nā mea hana semiconductor ke manaʻo i ka hoʻomaikaʻi ʻana i ka throughput, hoʻemi ʻia ka manawa haʻahaʻa, a me ka hoʻonui ʻana i ka huahana. Ua kūpono kēia ʻōnaehana me nā ʻano nui wafer a me nā hoʻonohonoho, hāʻawi i ka maʻalahi a me ka scalability no nā pono hana like ʻole.

ʻO ka hoʻokō o vet-china i ka maikaʻi e hōʻoia i kēlā me kēia Vertical Column Wafer Boat & Pedestal e hoʻokō i nā kūlana kiʻekiʻe o ka maikaʻi a me ka hana. Ma ke koho ʻana i kēia hopena ʻokiʻoki, hoʻopukapuka ʻoe i kahi ala e hiki mai ana i ka wā e hoʻohana ai i ka wafer e hoʻonui ai i ka pono a me ka hilinaʻi i ka hana semiconductor.

Waa Wafer Column Vertical & Pedestal

Nā waiwai o ka carbide silikona i hoʻopaʻa hou ʻia

ʻO ka carbide silicon recrystallized (R-SiC) he mea hana kiʻekiʻe me ka paʻakikī lua wale nō i ke daimana, i hana ʻia ma kahi wela kiʻekiʻe ma luna o 2000 ℃. Mālama ia i nā waiwai maikaʻi he nui o SiC, e like me ka ikaika wela kiʻekiʻe, ke kūpaʻa ʻana i ka corrosion ikaika, ke kūpaʻa oxidation maikaʻi loa, ke kūpaʻa haʻalulu maikaʻi a pēlā aku.

● ʻO nā mea mechanical maikaʻi loa. ʻO ka carbide silicon recrystallized he kiʻekiʻe aʻe ka ikaika a me ka ʻoʻoleʻa ma mua o ke kalapona kalapona, ke kūpaʻa hopena kiʻekiʻe, hiki ke pāʻani i ka hana maikaʻi i nā wahi wela wela, hiki ke pāʻani i ka hana counterbalance maikaʻi i nā ʻano kūlana. Eia kekahi, loaʻa iā ia ka maʻalahi maikaʻi a ʻaʻole maʻalahi i ka pōʻino e ka hoʻolōʻihi ʻana a me ke kulou ʻana, kahi e hoʻomaikaʻi nui ai i kāna hana.

● Kiʻekiʻe corrosion kū'ē. ʻO ka carbide silicon recrystallized he kiʻekiʻe ka corrosion kū'ē i nāʻano media likeʻole, hiki ke pale i ka erosion o nāʻano media corrosive, hiki ke mālama i kona mau mea mechanical no ka manawa lōʻihi, he paʻa ikaika, iʻoi aku ka lōʻihi o ke ola. Eia kekahi, loaʻa iā ia ka paʻa wela maikaʻi, hiki ke hoʻololi i kekahi ʻano o nā loli wela, hoʻomaikaʻi i kāna hopena noi.

● ʻAʻole e emi ka sintering. No ka emi ʻole o ke kaʻina hana sintering, ʻaʻohe koʻikoʻi koena e hoʻoneʻe i ka deformation a i ʻole ka haki ʻana o ka huahana, a hiki ke hoʻomākaukau ʻia nā ʻāpana me nā ʻano paʻakikī a me ka pololei kiʻekiʻe.

重结晶碳化硅物理特性

Nā waiwai kino o Recrystallized Silicon Carbide

性质 / Waiwai

典型数值 / Waiwai maʻamau

使用温度/ Mahana hana (°C)

1600°C (me ka oxygen), 1700°C (hoemi kaiapuni)

SiC含量/ maʻiʻo SiC

> 99.96%

自由Si含量/ Maikaʻi Si manuahi

< 0.1%

体积密度/ʻAno nui

2.60-2.70 g/cm3

气孔率/ ʻIke ʻia ka porosity

< 16%

抗压强度/ Ka ikaika hoʻoemi

> 600MPa

常温抗弯强度/Ka ikaika kulou anu

80-90 MPa (20°C)

高温抗弯强度Ka ikaika piko wela

90-100 MPa (1400°C)

热膨胀系数/ Hoʻonui wela @1500°C

4.70 10-6/°C

导热系数/ʻO ka wela wela @1200°C

23W/m•K

杨氏模量/ Modulus elastic

240 GPa

抗热震性/ Ke pale ʻana i ka haʻalulu wela

Maikaʻi loa

ʻO VET Energy ka kamea hana maoli o ka graphite maʻamau a me nā huahana silicon carbide me ka uhi CVD,hiki ke hoolakoʻokoʻanā ʻāpana i hana ʻia no ka semiconductor a me ka ʻoihana photovoltaic. OʻO kāu hui ʻenehana mai nā keʻena noiʻi kūloko kiʻekiʻe, hiki ke hāʻawi i nā ʻoihana ʻoihana ʻoi aku ka nuināu.

Hoʻomau mau mākou i nā kaʻina hana kiʻekiʻe e hāʻawi i nā mea ʻoi aku ka holomua,aUa hana ʻo ia i kahi ʻenehana patented kūʻokoʻa, hiki iā ia ke hana i ka hoʻopaʻa ʻana ma waena o ka uhi a me ka substrate i ʻoi aku ka paʻa a emi ʻole i ka wehe.

CVD SiC薄膜基本物理性能

Nā waiwai kino kumu o CVD SiCka uhi ʻana

性质 / Waiwai

典型数值 / Waiwai maʻamau

晶体结构 / Hoʻomoe Crystal

Māhele FCC β多晶,主要为(111)取向

密度 / Paʻa

3.21 g/cm³

硬度 / Oolea

2500 维氏硬度(500g load)

晶粒大小 / ʻAiʻa palaoa

2~10μm

纯度 / Maemae Kemika

99.99995%

热容 / Hikina Wela

640 J·kg-1·K-1

升华温度 / Kaumaha Sublimation

2700 ℃

抗弯强度 / Ka Ikaika Pilikia

415 MPa RT 4-point

杨氏模量 / 'Ōpio's Modulus

430 Gpa 4pt piko, 1300 ℃

导热系数 / ThermalʻO ka hoʻokō

300W·m-1·K-1

热膨胀系数 / Hoʻonui wela (CTE)

4.5×10-6K-1

1

2

Hoʻokipa maikaʻi iā ʻoe e kipa i kā mākou hale hana, e kūkākūkā hou kāua!

研发团队

 

生产设备

 

公司客户


  • Mua:
  • Aʻe:

  • WhatsApp kamaʻilio pūnaewele!