Waapa Wafer pili

ʻO ka wehewehe pōkole:

Hoʻolālā ʻia ka Contiguous Wafer Boat mai vet-china no ka lawelawe ʻana i ka wafer maikaʻi i ka hana semiconductor. Hana ʻia me ka pololei, ʻo ka hopena o vet-china e hōʻoiaʻiʻo i ka paʻa wela a me ke kūpaʻa kemika, e hoʻonui ana i nā kaʻina hana ʻoiai e hōʻemi ana i ka pōʻino a me ka hoʻonui ʻana i ka throughput.

E hoʻouna i ka leka uila iā mākou Hoʻoiho ma ke ʻano he PDF

Huahana Huahana

Hoʻolauna ʻo vet-china i kahi mokuʻāina ʻo Contiguous Wafer Boat i hana ʻia no ka hanauna hou o ka hana semiconductor. Hāʻawi kēia moku i hoʻolālā maikaʻi ʻia i ka pololei like ʻole i ka lawelawe ʻana i ka wafer, e hōʻoiaʻiʻo ana i nā hana maʻemaʻe a me ka hōʻemi nui ʻana i ka pōʻino i ka wā o ka hana ʻana.

Kūkulu ʻia me nā mea waiwai kiʻekiʻe, ʻo ka Contiguous Wafer Boat ke kaena nei i ke kūpaʻa wela maikaʻi loa a me ke kūpaʻa kemika kūʻokoʻa, kūpono ia no nā kaiapuni kemika kiʻekiʻe a me ka paʻakikī. ʻO kāna hoʻolālā hou e hōʻoia i ka paʻa ʻana o nā wafers a hoʻopaʻa pono ʻia, e hoʻonui ana i ka hana a me ka hoʻonui ʻana i ka pono hana.

Hoʻopili ʻia kēia waʻa wafer ʻokiʻoki e hoʻokō i nā pono koi o nā mea hana semiconductor hou, e kākoʻo ana i nā nui wafer like ʻole a me nā hoʻonohonoho. Ma ka hoʻokomo ʻana i ka Contiguous Wafer Boat mai vet-china i kāu laina hana, hiki iā ʻoe ke manaʻo i ka hoʻonui ʻana i ka hana, hoʻemi ʻia ka manawa haʻahaʻa, a me ka hoʻonui ʻana i nā kumukūʻai.

E ʻike i ka ʻokoʻa me ka hoʻokō ʻana o vet-china i ka maikaʻi a me ka hana hou, e hāʻawi ana i nā huahana e hoʻokau i nā palena o ka hana semiconductor. E koho i ka Contiguous Wafer Boat a e hoʻokiʻekiʻe i kou hiki ke hana wafer i kahi kiʻekiʻe.

Nā waiwai o ka carbide silika i hoʻopaʻa hou ʻia

ʻO ka carbide silicon recrystallized (R-SiC) he mea hana kiʻekiʻe me ka paʻakikī lua wale nō i ke daimana, i hana ʻia ma kahi wela kiʻekiʻe ma luna o 2000 ℃. Mālama ia i nā waiwai maikaʻi he nui o SiC, e like me ka ikaika wela kiʻekiʻe, ke kūpaʻa ʻana i ka corrosion ikaika, ke kūpaʻa oxidation maikaʻi loa, ke kūpaʻa haʻalulu maikaʻi a pēlā aku.

● ʻO nā mea mechanical maikaʻi loa. ʻO ka carbide silicon recrystallized he kiʻekiʻe aʻe ka ikaika a me ka ʻoʻoleʻa ma mua o ke kalapona kalapona, ke kūpaʻa hopena kiʻekiʻe, hiki ke pāʻani i ka hana maikaʻi i nā wahi wela wela, hiki ke pāʻani i ka hana counterbalance maikaʻi i nā ʻano kūlana. Eia kekahi, loaʻa iā ia ka maʻalahi maikaʻi a ʻaʻole maʻalahi i ka pōʻino e ka hoʻolōʻihi ʻana a me ke kulou ʻana, kahi e hoʻomaikaʻi nui ai i kāna hana.

● Kiʻekiʻe corrosion kū'ē. ʻO ka carbide silicon recrystallized he kiʻekiʻe ka corrosion resistance i nā ʻano media like ʻole, hiki ke pale i ka erosion o nā ʻano media corrosive, hiki ke mālama i kāna mau waiwai mechanical no ka manawa lōʻihi, he adhesion ikaika, i ʻoi aku ka lōʻihi o ke ola lawelawe. Eia kekahi, loaʻa iā ia ka paʻa wela maikaʻi, hiki ke hoʻololi i kekahi ʻano o nā loli wela, hoʻomaikaʻi i kāna hopena noi.

● ʻAʻole e emi ka sintering. No ka emi ʻole o ke kaʻina hana sintering, ʻaʻohe koʻikoʻi koena e hoʻoneʻe i ka deformation a i ʻole ka haki ʻana o ka huahana, a hiki ke hoʻomākaukau ʻia nā ʻāpana me nā ʻano paʻakikī a me ka pololei kiʻekiʻe.

重结晶碳化硅物理特性 Nā waiwai kino o Recrystallized Silicon Carbide
性质 / Waiwai	典型数值 / Waiwai maʻamau
使用温度/ Mahana hana (°C)	1600°C (me ka oxygen), 1700°C (hoemi kaiapuni)
SiC含量/ maʻiʻo SiC	> 99.96%
自由Si含量/ Maikaʻi Si manuahi	< 0.1%
体积密度/ʻAno nui	2.60-2.70 g/cm³
气孔率/ ʻIke ʻia ka porosity	< 16%
抗压强度/ Ka ikaika hoʻoemi	> 600MPa
常温抗弯强度/Ka ikaika kulou anu	80-90 MPa (20°C)
高温抗弯强度Ka ikaika piko wela	90-100 MPa (1400°C)
热膨胀系数/ Hoʻonui wela @1500°C	4.70 10^-6/°C
导热系数/ʻO ka wela wela @1200°C	23W/m•K
杨氏模量/ Modulus elastic	240 GPa
抗热震性/ Kūleʻa haʻalulu wela	Maikaʻi loa

ʻO VET Energy ka kamea hana maoli o ka graphite maʻamau a me nā huahana silicon carbide me ka uhi CVD,hiki ke hoolakoʻokoʻanā ʻāpana i hana ʻia no ka semiconductor a me ka ʻoihana photovoltaic. OʻO kāu hui ʻenehana mai nā keʻena noiʻi kūloko kiʻekiʻe, hiki ke hāʻawi i nā ʻoihana ʻoihana ʻoi aku ka nuināu.

Hoʻomau mau mākou i nā kaʻina hana kiʻekiʻe e hāʻawi i nā mea ʻoi aku ka holomua,aUa hana ʻo ia i kahi ʻenehana patented kūʻokoʻa, hiki iā ia ke hana i ka hoʻopaʻa ʻana ma waena o ka uhi a me ka substrate i ʻoi aku ka paʻa a emi ʻole i ka wehe.

CVD SiC薄膜基本物理性能 Nā waiwai kino kumu o CVD SiCka uhi ʻana
性质 / Waiwai	典型数值 / Waiwai maʻamau
晶体结构 / Hoʻomoe Crystal	Māhele FCC β多晶，主要为（111）取向
密度 / Paʻa	3.21 g/cm³
硬度 / Oolea	2500 维氏硬度（500g load）
晶粒大小 / ʻAiʻa palaoa	2~10μm
纯度 / Maemae Kemika	99.99995%
热容 / Hikina Wela	640 J·kg^-1·K^-1
升华温度 / Kaumaha Sublimation	2700 ℃
抗弯强度 / Ka Ikaika Pilikia	415 MPa RT 4-point
杨氏模量 / 'Ōpio's Modulus	430 Gpa 4pt piko, 1300 ℃
导热系数 / ThermalʻO ka hoʻokō	300W·m^-1·K^-1
热膨胀系数 / Hoʻonui wela (CTE)	4.5×10^-6K^-1