vet-china hōʻoia i kēlā me kēia DurableʻO Silicon Carbide Wafer Handling hoeloaʻa ka hana maikaʻi a me ka lōʻihi. Ke hoʻohana nei kēia ʻano hana wafer silicon carbide wafer i nā kaʻina hana kiʻekiʻe e hōʻoia i ka paʻa ʻana o kona kūkulu ʻana a me kāna mau hana i loko o ka wela kiʻekiʻe a me nā kaiapuni corrosion kemika. Hāʻawi kēia hoʻolālā hou i ke kākoʻo maikaʻi loa no ka lawelawe ʻana i ka wafer semiconductor, ʻoi aku hoʻi no nā hana automated kiʻekiʻe.
SiC Cantilever hoehe mea kūikawā i hoʻohana ʻia i nā lako hana semiconductor e like me ka umu oxidation, diffusion furnace, a me ka annealing furnace, ʻo ka hoʻohana nui no ka hoʻouka ʻana a me ka wehe ʻana, kākoʻo a lawe i nā wafers i nā kaʻina hana kiʻekiʻe.
Nā hale maʻamauoSiCcantileverpaddle: he hale cantilever, paʻa ma kekahi ʻaoʻao a manuahi ma kekahi, he ʻano palahalaha a me ka hoe.
Ke hana neipkikoʻīoSiCcantileverpaddle:
Hiki i ka hoe cantilever ke neʻe i luna a i lalo a i ʻole i hope a i ʻole i loko o ke keʻena umu, hiki ke hoʻohana ʻia e hoʻoneʻe i nā wafers mai nā wahi hoʻouka i nā wahi hana, a i ʻole ma waho o nā wahi hana, kākoʻo a hoʻopaʻa i nā wafers i ka wā o ka hana wela kiʻekiʻe.
| Nā waiwai kino o Recrystallized Silicon Carbide | |
| Waiwai | Waiwai maʻamau |
| Mahana hana (°C) | 1600°C (me ka oxygen), 1700°C (hoemi kaiapuni) |
| maʻiʻo SiC | > 99.96% |
| Maikaʻi Si manuahi | < 0.1% |
| ʻAno nui | 2.60-2.70 g/cm3 |
| ʻIke ʻia ka porosity | < 16% |
| Ka ikaika hoʻoemi | > 600 MPa |
| Ka ikaika kulou anu | 80-90 MPa (20°C) |
| Ka ikaika piko wela | 90-100 MPa (1400°C) |
| Hoʻonui wela @1500°C | 4.70 10-6/°C |
| ʻO ka wela wela @1200°C | 23 W/m•K |
| Modulus elastic | 240 GPa |
| Ke kū'ē i ka ha'alulu wela | Maikaʻi loa |
