ʻO ka holomuaSiC Cantilever hoeno ka Wafer Processing i hana ʻia e vet-china e hāʻawi i kahi hopena maikaʻi loa no ka hana semiconductor. Hana ʻia kēia hoe cantilever me ka mea SiC (silicon carbide), a ʻo kona paʻakikī kiʻekiʻe a me ke kūpaʻa wela e hiki ai iā ia ke mālama i ka hana maikaʻi loa ma nā wahi wela a me nā pōʻino. ʻO ka hoʻolālā o ka Cantilever Paddle e hiki ai ke kākoʻo pono i ka wafer i ka wā e hana ai, e hōʻemi ana i ka pilikia o ka ʻāpana a me ka pōʻino.
SiC Cantilever hoehe mea kūikawā i hoʻohana ʻia i nā lako hana semiconductor e like me ka umu oxidation, diffusion furnace, a me ka annealing furnace, ʻo ka hoʻohana nui no ka hoʻouka ʻana a me ka wehe ʻana, kākoʻo a lawe i nā wafers i nā kaʻina hana kiʻekiʻe.
Nā hale maʻamauoSiCcantileverpaddle: he hale cantilever, paʻa ma kekahi ʻaoʻao a manuahi ma kekahi, he ʻano palahalaha a like me ka hoe.
Hoʻohana ʻo VET Energy i nā mea hana silicon carbide maʻemaʻe kiʻekiʻe e hōʻoia i ka maikaʻi.
Nā waiwai kino o Recrystallized Silicon Carbide | |
Waiwai | Waiwai maʻamau |
Mahana hana (°C) | 1600°C (me ka oxygen), 1700°C (hoemi kaiapuni) |
maʻiʻo SiC | > 99.96% |
Maikaʻi Si manuahi | < 0.1% |
ʻAno nui | 2.60-2.70 g/cm3 |
ʻIke ʻia ka porosity | < 16% |
Ka ikaika hoʻoemi | > 600MPa |
Ka ikaika kulou anu | 80-90 MPa (20°C) |
Ka ikaika piko wela | 90-100 MPa (1400°C) |
Hoʻonui wela @1500°C | 4.70 10-6/°C |
ʻO ka wela wela @1200°C | 23W/m•K |
Modulus elastic | 240 GPa |
Ke kū'ē i ka ha'alulu wela | Maikaʻi loa |
ʻO nā pono o ka VET Energy's Advanced SiC Cantilever Paddle no ka Wafer Processing:
-Ke kūpaʻa wela kiʻekiʻe: hiki ke hoʻohana ʻia i nā kaiapuni ma luna o 1600 ° C;
-Ka helu hoʻonui wela haʻahaʻa: mālama i ke kūpaʻa dimensional, e hōʻemi ana i ka pilikia wafer warpage;
-Maʻemaʻe kiʻekiʻe: haʻahaʻa haʻahaʻa o ka hoʻohaumia metala;
-Ke kimehana inertness: corrosion-resistant, kūpono no nā ʻano kinoea like ʻole;
-ʻO ka ikaika kiʻekiʻe a me ka paʻakikī: Keʻaʻahu kū'ē, ke ola lōʻihi;
- Ka hoʻoheheʻe wela maikaʻi: kōkua i ka hoʻomehana wafer like.