ʻO SiC Cantilever hoe no ka hana ʻana i ka wafer

ʻO ka wehewehe pōkole:

ʻO ka Advanced SiC Cantilever Paddle for Wafer Processing i hoʻokuʻu ʻia e vet-china e hoʻohana i nā mea SiC kiʻekiʻe e hoʻomaikaʻi i ka pono a me ka pololei o ka hana wafer. Hōʻike ka hoe cantilever o Vet-china i ke kūpaʻa wela maikaʻi loa a me ka pale ʻana i ka corrosion, e hōʻoiaʻiʻo ana i ka hana ʻana o ka wafer paʻa i nā wahi hana ʻino, e lilo ia i koho kūpono no ka hoʻomaikaʻi ʻana i nā hua hana.


Huahana Huahana

Huahana Huahana

ʻO ka holomuaSiC Cantilever hoeno ka Wafer Processing i hana ʻia e vet-china e hāʻawi i kahi hopena maikaʻi loa no ka hana semiconductor. Hana ʻia kēia hoe cantilever me ka mea SiC (silicon carbide), a ʻo kona paʻakikī kiʻekiʻe a me ke kūpaʻa wela e hiki ai iā ia ke mālama i ka hana maikaʻi loa ma nā wahi wela a me nā pōʻino. ʻO ka hoʻolālā o ka Cantilever Paddle e hiki ai ke kākoʻo pono i ka wafer i ka wā e hana ai, e hōʻemi ana i ka pilikia o ka ʻāpana a me ka pōʻino.

SiC Cantilever hoehe mea kūikawā i hoʻohana ʻia i nā lako hana semiconductor e like me ka umu oxidation, diffusion furnace, a me ka annealing furnace, ʻo ka hoʻohana nui no ka hoʻouka ʻana a me ka wehe ʻana, kākoʻo a lawe i nā wafers i nā kaʻina hana kiʻekiʻe.

Nā hale maʻamauoSiCcantileverpaddle: he hale cantilever, paʻa ma kekahi ʻaoʻao a manuahi ma kekahi, he ʻano palahalaha a like me ka hoe.

Hoʻohana ʻo VET Energy i nā mea hana silicon carbide maʻemaʻe kiʻekiʻe e hōʻoia i ka maikaʻi.

Nā waiwai kino o Recrystallized Silicon Carbide

Waiwai

Waiwai maʻamau

Mahana hana (°C)

1600°C (me ka oxygen), 1700°C (hoemi kaiapuni)

maʻiʻo SiC

> 99.96%

Maikaʻi Si manuahi

< 0.1%

ʻAno nui

2.60-2.70 g/cm3

ʻIke ʻia ka porosity

< 16%

Ka ikaika hoʻoemi

> 600MPa

Ka ikaika kulou anu

80-90 MPa (20°C)

Ka ikaika piko wela

90-100 MPa (1400°C)

Hoʻonui wela @1500°C

4.70 10-6/°C

ʻO ka wela wela @1200°C

23W/m•K

Modulus elastic

240 GPa

Ke kū'ē i ka ha'alulu wela

Maikaʻi loa

ʻO nā pono o ka VET Energy's Advanced SiC Cantilever Paddle no ka Wafer Processing:

-Ke kūpaʻa wela kiʻekiʻe: hiki ke hoʻohana ʻia i nā kaiapuni ma luna o 1600 ° C;

-Ka helu hoʻonui wela haʻahaʻa: mālama i ke kūpaʻa dimensional, e hōʻemi ana i ka pilikia wafer warpage;

-Maʻemaʻe kiʻekiʻe: haʻahaʻa haʻahaʻa o ka hoʻohaumia metala;

-Ke kimehana inertness: corrosion-resistant, kūpono no nā ʻano kinoea like ʻole;

-ʻO ka ikaika kiʻekiʻe a me ka paʻakikī: Keʻaʻahu kū'ē, ke ola lōʻihi;

- Ka hoʻoheheʻe wela maikaʻi: kōkua i ka hoʻomehana wafer like.

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