4 Iniha GaAs Wafer

ʻO ka wehewehe pōkole:

ʻO VET Energy 4 inch GaAs wafer kahi substrate semiconductor maʻemaʻe kiʻekiʻe i kaulana no kāna mau waiwai uila maikaʻi loa, e lilo ia i koho kūpono no nā ʻano noi. Hoʻohana ʻo VET Energy i nā ʻenehana ulu kristal kiʻekiʻe e hana i nā wafers GaAs me ke ʻano like ʻole, haʻahaʻa defect density, a me nā pae doping pololei.


Huahana Huahana

Huahana Huahana

ʻO ka 4 Inch GaAs Wafer mai VET Energy he mea pono ia no nā polokalamu kiʻekiʻe a me ka optoelectronic, me nā mea hoʻonui RF, nā LED, a me nā pūnaewele lā. ʻIke ʻia kēia mau wafers no ko lākou mobility electron kiʻekiʻe a me ka hiki ke hana i nā alapine kiʻekiʻe, e hana ana iā lākou i mea koʻikoʻi i nā noi semiconductor kiʻekiʻe. Mālama ʻo VET Energy i nā wafers GaAs maikaʻi loa me ka mānoanoa like ʻole a me nā hemahema liʻiliʻi, kūpono no nā ʻano hana hana koi.

Hoʻopili kēia mau 4 Inch GaAs Wafers me nā mea semiconductor like ʻole e like me Si Wafer, SiC Substrate, SOI Wafer, a me SiN Substrate, e hoʻolilo iā lākou i mea maʻalahi no ka hoʻohui ʻana i nā ʻano hana like ʻole. Inā hoʻohana ʻia no ka hana ʻana o Epi Wafer a i ʻole nā ​​​​mea ʻokiʻoki e like me Gallium Oxide Ga2O3 a me AlN Wafer, hāʻawi lākou i kahi kumu hilinaʻi no nā mea uila e hiki mai ana. Eia hou, ua kūpono nā wafers me nā ʻōnaehana hoʻokele Cassette, e hōʻoiaʻiʻo ana i nā hana maʻemaʻe ma ka noiʻi a me nā wahi hana kiʻekiʻe.

Hāʻawi ʻo VET Energy i kahi kōpili piha o nā substrate semiconductor, me Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, Gallium Oxide Ga2O3, a me AlN Wafer. Hāʻawi kā mākou laina huahana like ʻole i nā pono o nā noi uila like ʻole, mai ka uila uila a hiki i ka RF a me ka optoelectronics.

Hāʻawi ʻo VET Energy i nā wafers GaAs maʻamau e hoʻokō i kāu mau koi kikoʻī, me nā pae doping like ʻole, nā kuhikuhi, a me ka hoʻopau ʻana i ka ʻili. Hāʻawi kā mākou hui loea i ke kākoʻo ʻenehana a me ka lawelawe ma hope o ke kūʻai aku e hōʻoia i kāu kūleʻa.

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第6页-35

OLELO HOOLAHA WAFERING

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

'ikamu

8-Inika

6-Iniha

4-Iniha

nP

n-Pm

n-Ps

SI

SI

TTV(GBIR)

≤6um

≤6um

Kakaka (GF3YFCD)-Waiwai Loa

≤15μm

≤15μm

≤25μm

≤15μm

Warp(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

LTV(SBIR)-10mmx10mm

<2μm

Wafer Edge

ʻO ka beveling

ILI HOPE

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

'ikamu

8-Inika

6-Iniha

4-Iniha

nP

n-Pm

n-Ps

SI

SI

Hoʻopau ʻili

ʻaoʻao ʻelua Optical Polish, Si- Face CMP

ʻAhaʻulaʻula

(10um x 10um) Si-FaceRa≤0.2nm
C-Face Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
C-Face Ra≤0.5nm

ʻOpeʻa lihi

ʻAʻohe ʻae ʻia (lōʻihi a laula≥0.5mm)

Indents

ʻAʻole ʻae ʻia

Nā ʻōpala (Si-Face)

Ka nui.≤5, Huihui
Length≤0.5×wafer anawaena

Ka nui.≤5, Huihui
Length≤0.5×wafer anawaena

Ka nui.≤5, Huihui
Length≤0.5×wafer anawaena

māwae

ʻAʻole ʻae ʻia

Hoʻokuʻu Edge

3mm

tech_1_2_size
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