6 Iniha Semi Insulating SiC Wafer

ʻO ka wehewehe pōkole:

ʻO VET Energy 6 inch semi-insulating silicon carbide (SiC) wafer kahi substrate kiʻekiʻe kūpono no ka nui o nā noi uila uila. Hoʻohana ʻo VET Energy i nā ʻenehana ulu holomua e hana i nā wafers SiC me ka maikaʻi aniani maikaʻi loa, ka haʻahaʻa haʻahaʻa haʻahaʻa, a me ke kūpaʻa kiʻekiʻe.


Huahana Huahana

Huahana Huahana

ʻO ka 6 Inch Semi Insulating SiC Wafer mai VET Energy kahi hopena holomua no nā noi mana kiʻekiʻe a me nā alapine kiʻekiʻe, e hāʻawi ana i ka conductivity thermal kiʻekiʻe a me ka insulation uila. Pono kēia mau wafers semi-insulating i ka hoʻomohala ʻana i nā mea hana e like me RF amplifier, hoʻololi mana, a me nā mea kiʻekiʻe-voltage ʻē aʻe. Mālama ʻo VET Energy i ka maikaʻi a me ka hana ʻana, e hana ana i kēia mau wafers i kūpono no kahi ākea o nā kaʻina hana semiconductor.

Ma waho aʻe o kā lākou mau waiwai insulating koʻikoʻi, ua kūpono kēia mau wafers SiC me nā ʻano mea like ʻole me Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, a me Epi Wafer, e hoʻolilo iā lākou i mea maʻalahi no nā ʻano hana hana like ʻole. Eia kekahi, hiki ke hoʻohana ʻia nā mea kiʻekiʻe e like me Gallium Oxide Ga2O3 a me AlN Wafer i hui pū ʻia me kēia mau wafers SiC, e hāʻawi ana i ka maʻalahi o nā mea uila uila kiʻekiʻe. Hoʻolālā ʻia nā wafers no ka hoʻohui pono ʻana me nā ʻōnaehana lawelawe maʻamau e like me nā ʻōnaehana Cassette, e hōʻoiaʻiʻo ana i ka maʻalahi o ka hoʻohana ʻana i nā hoʻonohonoho hana nui.

Hāʻawi ʻo VET Energy i kahi kōpili piha o nā substrate semiconductor, me Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, Gallium Oxide Ga2O3, a me AlN Wafer. Hāʻawi kā mākou laina huahana like ʻole i nā pono o nā noi uila like ʻole, mai ka uila uila a hiki i ka RF a me ka optoelectronics.

Hāʻawi ʻo 6 inch semi-insulating SiC wafer i nā pono he nui:
Kiʻekiʻe breakdown voltage: ʻO ka bandgap ākea o SiC hiki ke kiʻekiʻe kiʻekiʻe breakdown voltages, e ʻae ai i nā mea mana paʻa a maikaʻi.
ʻO ka hana wela kiʻekiʻe: ʻO ka conductivity thermal maikaʻi loa o SiC e hiki ai ke hana i nā wela kiʻekiʻe, e hoʻomaikaʻi i ka hilinaʻi o ka mea hana.
Haʻahaʻa ma ke kū'ē: hōʻike nā mea SiC i ka haʻahaʻa ma ke kū'ē, e hōʻemi ana i ka nalowale o ka mana a me ka hoʻomaikaʻi ʻana i ka ikehu.

Hāʻawi ʻo VET Energy i nā wafers SiC maʻamau e hoʻokō i kāu mau koi kikoʻī, me nā mānoanoa like ʻole, nā pae doping, a me ka pau ʻana o ka ʻili. Hāʻawi kā mākou hui loea i ke kākoʻo ʻenehana a me ka lawelawe ma hope o ke kūʻai aku e hōʻoia i kāu kūleʻa.

第6页-36
第6页-35

OLELO HOOLAHA WAFERING

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

'ikamu

8-Inika

6-Iniha

4-Iniha

nP

n-Pm

n-Ps

SI

SI

TTV(GBIR)

≤6um

≤6um

Kakaka (GF3YFCD)-Waiwai Loa

≤15μm

≤15μm

≤25μm

≤15μm

Warp(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

LTV(SBIR)-10mmx10mm

<2μm

Wafer Edge

ʻO ka beveling

PAPA IHO

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

'ikamu

8-Inika

6-Iniha

4-Iniha

nP

n-Pm

n-Ps

SI

SI

Hoʻopau ʻili

ʻaoʻao ʻelua Optical Polish, Si- Face CMP

ʻAhaʻulaʻula

(10um x 10um) Si-FaceRa≤0.2nm
C-Face Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
C-Face Ra≤0.5nm

ʻOpi ʻEke

ʻAʻohe ʻae ʻia (lōʻihi a laula≥0.5mm)

Indents

ʻAʻole ʻae ʻia

Nā ʻōpala (Si-Face)

Ka nui.≤5, Huihui
Length≤0.5×wafer anawaena

Ka nui.≤5, Huihui
Length≤0.5×wafer anawaena

Ka nui.≤5, Huihui
Length≤0.5×wafer anawaena

māwae

ʻAʻole ʻae ʻia

Hoʻokuʻu Edge

3mm

tech_1_2_size
下载 (2)

  • Mua:
  • Aʻe:

  • WhatsApp kamaʻilio pūnaewele!