8 Intshi P Uhlobo lweSilicon Wafer

Incazelo emfushane:

Sethula i-premium-grade 8 Inch P yohlobo lwe-Silicon Wafer, uphawu oluhle kakhulu oluvela ku-VET Energy. Lesi sinkwa esiyisicwecwana esiyingqayizivele, esihlanganisa iphrofayela ye-doping yohlobo lwe-P, siklanywe ngobunono ukuze sihlangabezane namazinga aphezulu kakhulu ekhwalithi nokusebenza.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-Silicon Wafer engu-8 Inch P evela ku-VET Energy iyisicwecwana se-silicon esisebenza kahle esiklanyelwe uhla olubanzi lwezinhlelo zokusebenza ze-semiconductor, okuhlanganisa amaseli elanga, amadivaysi e-MEMS, namasekhethi ahlanganisiwe. Yaziwa ngokusebenza kwayo okuhle kakhulu kukagesi nokusebenza okungaguquguquki, le wafer iyinketho ekhethwayo kubakhiqizi abafuna ukukhiqiza izingxenye zikagesi ezithembekile nezisebenza kahle. I-VET Energy iqinisekisa amazinga anembile e-doping kanye nokuqedwa kwendawo ephezulu kwekhwalithi ephezulu ukuze kwenziwe idivayisi efanele.

Lawa ma-Silicon Wafers ohlobo lwe-8 Inch P ahambisana ngokuphelele nezinto ezahlukahlukene ezifana ne-SiC Substrate, i-SOI Wafer, i-SiN Substrate, futhi afanele ukukhula kwe-Epi Wafer, okuqinisekisa ukuguquguquka kwezinqubo zokukhiqiza ezisezingeni eliphezulu ze-semiconductor. Amawafa angasetshenziswa futhi ngokuhambisana nezinye izinto zobuchwepheshe obuphezulu njenge-Gallium Oxide Ga2O3 kanye ne-AlN Wafer, okuwenza alungele izinhlelo zokusebenza ze-elekthronikhi zesizukulwane esilandelayo. Idizayini yabo eqinile iphinde ingene ngaphandle komthungo ezinhlelweni ezisekelwe ku-Cassette, iqinisekisa ukuphathwa okusebenzayo nokukhiqiza ivolumu ephezulu.

I-VET Energy ihlinzeka amakhasimende ngezixazululo ezenziwe ngezifiso ze-wafer. Singakwazi ukwenza ngokwezifiso ama-wafers ane-resistivity ehlukene, okuqukethwe komoya-mpilo, ukujiya, njll. ngokuya ngezidingo ezithile zamakhasimende. Ngaphezu kwalokho, siphinde sinikeze ukwesekwa kwezobuchwepheshe kanye nesevisi yangemuva kokuthengisa ukuze sisize amakhasimende axazulule izinkinga ezihlukahlukene okuhlangatshezwane nazo phakathi nenqubo yokukhiqiza.

Ikhasi 6-36
Ikhasi 6-35

IMICIMBI YOKUFAKA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into

8-Intshi

6-Intshi

4-Intshi

nP

n-Pm

n-IHu

SI

SI

I-TTV(GBIR)

≤6um

≤6um

Umnsalo(GF3YFCD)-Inani Eliphelele

≤15μm

≤15μm

≤25μm

≤15μm

I-Warp(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

I-LTV(SBIR)-10mmx10mm

<2μm

I-Wafer Edge

Beveling

UBUHLUNGU QEDA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into

8-Intshi

6-Intshi

4-Intshi

nP

n-Pm

n-IHu

SI

SI

I-Surface Qeda

I-Double side Optical Polish, i-Si- Face CMP

I-SurfaceRoughness

(10um x 10um) I-Si-FaceRa≤0.2nm
I-C-Face Ra≤ 0.5nm

(5umx5um) I-Si-Face Ra≤0.2nm
I-C-Face Ra≤0.5nm

Ama-Edge Chips

Akukho okuvunyelwe (ubude nobubanzi≥0.5mm)

Izindebe

Akukho Okuvunyelwe

Imihuzuko(Si-Face)

Ubuningi.≤5,Okuqongelelwe
Ubude≤0.5× ububanzi bewafa

Ubuningi.≤5,Okuqongelelwe
Ubude≤0.5× ububanzi bewafa

Ubuningi.≤5,Okuqongelelwe
Ubude≤0.5× ububanzi bewafa

Imifantu

Akukho Okuvunyelwe

Ukukhishwa komkhawulo

3mm

tech_1_2_size
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