4 Intshi GaAs Wafer

Incazelo emfushane:

I-VET Energy 4 inch GaAs wafer iyindawo ephansi ye-semiconductor ehlanzekile edume ngezinto zayo ezinhle kakhulu ze-elekthronikhi, okuyenza ibe yinketho ekahle ezinhlobonhlobo zezinhlelo zokusebenza. I-VET Energy isebenzisa amasu okukhula kwekristalu athuthukisiwe ukuze kukhiqizwe amawafa e-GaAs anokufana okukhethekile, ukuminyana okunesici esiphansi, namazinga e-doping anembile.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-4 Inch GaAs Wafer evela ku-VET Energy iyinto ebalulekile yamadivayisi anesivinini esiphezulu nawe-optoelectronic, okuhlanganisa izikhulisamazwi ze-RF, ama-LED, namaseli elanga. Lawa mawafa aziwa ngokuhamba kwawo kwama-electron aphezulu namandla okusebenza kumafrikhwensi aphezulu, okuwenza abe yingxenye ebalulekile ezinhlelweni ezithuthukisiwe ze-semiconductor. I-VET Energy iqinisekisa ama-wafers ekhwalithi ephezulu e-GaAs anogqinsi olufanayo kanye namaphutha amancane, afanele izinqubo zokwenziwa ezifunwayo.

Lawa ma-4 Inch GaAs Wafers ahambisana nezinto ezahlukahlukene ze-semiconductor ezifana ne-Si Wafer, i-SiC Substrate, i-SOI Wafer, ne-SiN Substrate, iwenza abe nezinto ezihlukahlukene ukuze ahlanganiswe ekwakhiweni kwamadivayisi ahlukene. Kungakhathaliseki ukuthi isetshenziselwa ukukhiqizwa kwe-Epi Wafer noma eduze kwezinto ezisezingeni eliphezulu njenge-Gallium Oxide Ga2O3 kanye ne-AlN Wafer, zinikeza isisekelo esithembekile se-electronics yesizukulwane esilandelayo. Ukwengeza, ama-wafers ahambisana ngokugcwele nezinhlelo zokubamba ezisekelwe kwi-Cassette, okuqinisekisa ukusebenza kahle kokubili kocwaningo kanye nezindawo zokukhiqiza eziphezulu.

I-VET Energy inikeza iphothifoliyo ebanzi yama-semiconductor substrates, okuhlanganisa i-Si Wafer, i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, i-Epi Wafer, i-Gallium Oxide Ga2O3, ne-AlN Wafer. Ulayini wethu wemikhiqizo eyahlukene ubhekelela izidingo zezinhlelo zokusebenza ze-elekthronikhi ezihlukahlukene, kusukela kugesi wamandla kuya ku-RF kanye ne-optoelectronics.

I-VET Energy inikeza ama-wafers e-GaAs enziwe ngokwezifiso ukuze ahlangabezane nezidingo zakho ezithile, okuhlanganisa amazinga e-doping ahlukene, umumo, nokuqedwa kwendawo. Ithimba lethu lochwepheshe linikeza ukwesekwa kwezobuchwepheshe kanye nesevisi yangemuva kokuthengisa ukuze uqinisekise impumelelo yakho.

Ikhasi 6-36
Ikhasi 6-35

IMICIMBI YOKUFAKA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

Into

8-Intshi

6-Intshi

4-Intshi

nP

n-Pm

n-IHu

SI

SI

I-TTV(GBIR)

≤6um

≤6um

Umnsalo(GF3YFCD)-Inani Eliphelele

≤15μm

≤15μm

≤25μm

≤15μm

I-Warp(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

I-LTV(SBIR)-10mmx10mm

<2μm

I-Wafer Edge

Beveling

UBUHLUNGU QEDA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

Into

8-Intshi

6-Intshi

4-Intshi

nP

n-Pm

n-IHu

SI

SI

I-Surface Qeda

I-Double side Optical Polish, i-Si- Face CMP

I-SurfaceRoughness

(10um x 10um) I-Si-FaceRa≤0.2nm
I-C-Face Ra≤ 0.5nm

(5umx5um) I-Si-Face Ra≤0.2nm
I-C-Face Ra≤0.5nm

Ama-Edge Chips

Akukho okuvunyelwe (ubude nobubanzi≥0.5mm)

Izindebe

Akukho Okuvunyelwe

Imihuzuko(Si-Face)

Ubuningi.≤5,Okuqoqekile
Ubude≤0.5× ububanzi bewafa

Ubuningi.≤5,Okuqoqekile
Ubude≤0.5× ububanzi bewafa

Ubuningi.≤5,Okuqoqekile
Ubude≤0.5× ububanzi bewafa

Imifantu

Akukho Okuvunyelwe

Ukukhishwa komkhawulo

3mm

tech_1_2_size
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