I-4 Inch GaAs Wafer evela ku-VET Energy iyinto ebalulekile yamadivayisi anesivinini esiphezulu nawe-optoelectronic, okuhlanganisa izikhulisamazwi ze-RF, ama-LED, namaseli elanga. Lawa mawafa aziwa ngokuhamba kwawo kwama-electron aphezulu namandla okusebenza kumafrikhwensi aphezulu, okuwenza abe yingxenye ebalulekile ezinhlelweni ezithuthukisiwe ze-semiconductor. I-VET Energy iqinisekisa ama-wafers ekhwalithi ephezulu e-GaAs anogqinsi olufanayo kanye namaphutha amancane, afanele izinqubo zokwenziwa ezifunwayo.
Lawa ma-4 Inch GaAs Wafers ahambisana nezinto ezahlukahlukene ze-semiconductor ezifana ne-Si Wafer, i-SiC Substrate, i-SOI Wafer, ne-SiN Substrate, iwenza abe nezinto ezihlukahlukene ukuze ahlanganiswe ekwakhiweni kwamadivayisi ahlukene. Kungakhathaliseki ukuthi isetshenziselwa ukukhiqizwa kwe-Epi Wafer noma eduze kwezinto ezisezingeni eliphezulu njenge-Gallium Oxide Ga2O3 kanye ne-AlN Wafer, zinikeza isisekelo esithembekile se-electronics yesizukulwane esilandelayo. Ukwengeza, ama-wafers ahambisana ngokugcwele nezinhlelo zokubamba ezisekelwe kwi-Cassette, okuqinisekisa ukusebenza kahle kokubili kocwaningo kanye nezindawo zokukhiqiza eziphezulu.
I-VET Energy inikeza iphothifoliyo ebanzi yama-semiconductor substrates, okuhlanganisa i-Si Wafer, i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, i-Epi Wafer, i-Gallium Oxide Ga2O3, ne-AlN Wafer. Ulayini wethu wemikhiqizo eyahlukene ubhekelela izidingo zezinhlelo zokusebenza ze-elekthronikhi ezihlukahlukene, kusukela kugesi wamandla kuya ku-RF kanye ne-optoelectronics.
I-VET Energy inikeza ama-wafers e-GaAs enziwe ngokwezifiso ukuze ahlangabezane nezidingo zakho ezithile, okuhlanganisa amazinga e-doping ahlukene, umumo, nokuqedwa kwendawo. Ithimba lethu lochwepheshe linikeza ukwesekwa kwezobuchwepheshe kanye nesevisi yangemuva kokuthengisa ukuze uqinisekise impumelelo yakho.
IMICIMBI YOKUFAKA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating
Into | 8-Intshi | 6-Intshi | 4-Intshi | ||
nP | n-Pm | n-IHu | SI | SI | |
I-TTV(GBIR) | ≤6um | ≤6um | |||
Umnsalo(GF3YFCD)-Inani Eliphelele | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
I-Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
I-LTV(SBIR)-10mmx10mm | <2μm | ||||
I-Wafer Edge | Beveling |
UBUHLUNGU QEDA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating
Into | 8-Intshi | 6-Intshi | 4-Intshi | ||
nP | n-Pm | n-IHu | SI | SI | |
I-Surface Qeda | I-Double side Optical Polish, i-Si- Face CMP | ||||
I-SurfaceRoughness | (10um x 10um) I-Si-FaceRa≤0.2nm | (5umx5um) I-Si-Face Ra≤0.2nm | |||
Ama-Edge Chips | Akukho okuvunyelwe (ubude nobubanzi≥0.5mm) | ||||
Izindebe | Akukho Okuvunyelwe | ||||
Imihuzuko(Si-Face) | Ubuningi.≤5,Okuqoqekile | Ubuningi.≤5,Okuqoqekile | Ubuningi.≤5,Okuqoqekile | ||
Imifantu | Akukho Okuvunyelwe | ||||
Ukukhishwa komkhawulo | 3mm |