I-VET Energy 12-inch SOI wafer iwumsebenzi osezingeni eliphezulu we-semiconductor substrate, ethandwa kakhulu ngezakhiwo zayo zikagesi ezinhle kakhulu kanye nesakhiwo esiyingqayizivele. I-VET Energy isebenzisa izinqubo ezithuthukisiwe zokukhiqiza i-SOI wafer ukuze kuqinisekiswe ukuthi i-wafer inokuvuza okuphansi kakhulu kwamanje, isivinini esikhulu kanye nokumelana nemisebe, okuhlinzeka ngesisekelo esiqinile samasekethe akho ahlanganisiwe asebenza kahle kakhulu.
Ulayini womkhiqizo we-VET Energy awukhawulelwe kumawafa e-SOI. Siphinde futhi sinikeze ngezinhlobonhlobo zezinto ezisetshenziswayo ze-semiconductor substrate, okuhlanganisa i-Si Wafer, i-SiC Substrate, i-SiN Substrate, i-Epi Wafer, njll., kanye nezinto ezintsha ze-bandgap semiconductor ezintsha ezifana ne-Gallium Oxide Ga2O3 ne-AlN Wafer. Le mikhiqizo ingahlangabezana nezidingo zohlelo lokusebenza zamakhasimende ahlukene kugesi wamandla, i-RF, izinzwa neminye imikhakha.
Ngokugxila ebuhleni, amawafa ethu e-SOI aphinde asebenzise izinto ezithuthukisiwe ezifana ne-gallium oxide Ga2O3, amakhasethi namawafa e-AlN ukuze aqinisekise ukwethembeka nokusebenza kahle kuwo wonke amazinga okusebenza. Thembela i-VET Energy ukuhlinzeka ngezixazululo ezisezingeni eliphezulu ezivula indlela yentuthuko yezobuchwepheshe.
Khipha amandla ephrojekthi yakho ngokusebenza okuphezulu kwama-VET Energy 12-inch SOI wafers. Thuthukisa amakhono akho okusungula ngamawafa ahlanganisa ikhwalithi, ukunemba kanye nokuqanjwa okusha, ukubeka isisekelo sempumelelo emkhakheni oguquguqukayo wobuchwepheshe be-semiconductor. Khetha i-VET Energy yezixazululo ze-premium ze-SOI ezidlula okulindelekile.
IMICIMBI YOKUFAKA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation
Into | 8-Intshi | 6-Intshi | 4-Intshi | ||
nP | n-Pm | n-IHu | SI | SI | |
I-TTV(GBIR) | ≤6um | ≤6um | |||
Umnsalo(GF3YFCD)-Inani Eliphelele | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
I-Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
I-LTV(SBIR)-10mmx10mm | <2μm | ||||
I-Wafer Edge | Beveling |
UBUHLUNGU QEDA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation
Into | 8-Intshi | 6-Intshi | 4-Intshi | ||
nP | n-Pm | n-IHu | SI | SI | |
I-Surface Qeda | I-Double side Optical Polish, i-Si- Face CMP | ||||
I-SurfaceRoughness | (10um x 10um) I-Si-FaceRa≤0.2nm | (5umx5um) I-Si-Face Ra≤0.2nm | |||
Ama-Edge Chips | Akukho okuvunyelwe (ubude nobubanzi≥0.5mm) | ||||
Izindebe | Akukho Okuvunyelwe | ||||
Imihuzuko(Si-Face) | Ubuningi.≤5,Okuqongelelwe | Ubuningi.≤5,Okuqongelelwe | Ubuningi.≤5,Okuqongelelwe | ||
Imifantu | Akukho Okuvunyelwe | ||||
Ukukhishwa komkhawulo | 3mm |