I-12 Intshi ye-SOI Wafer

Incazelo emfushane:

Zizwa ukuqamba okusha okungakaze kwenzeke ngaphambili nge-state-of-the-art 12 Inch SOI Wafer, isimangaliso sobuchwepheshe esilethwe kuwe ngokuziqhenya yi-VET Energy. Njengoba yenziwe ngokunemba nobungcweti, lesi sicwecwana se-Silicon-On-Insulator sichaza kabusha izindinganiso zomkhakha, sinikeza ikhwalithi nokusebenza okungenakuqhathaniswa.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-VET Energy 12-inch SOI wafer iwumsebenzi osezingeni eliphezulu we-semiconductor substrate, ethandwa kakhulu ngezakhiwo zayo zikagesi ezinhle kakhulu kanye nesakhiwo esiyingqayizivele. I-VET Energy isebenzisa izinqubo ezithuthukisiwe zokukhiqiza i-SOI wafer ukuze kuqinisekiswe ukuthi i-wafer inokuvuza okuphansi kakhulu kwamanje, isivinini esikhulu kanye nokumelana nemisebe, okuhlinzeka ngesisekelo esiqinile samasekethe akho ahlanganisiwe asebenza kahle kakhulu.

Ulayini womkhiqizo we-VET Energy awukhawulelwe kumawafa e-SOI. Siphinde futhi sinikeze ngezinhlobonhlobo zezinto ezisetshenziswayo ze-semiconductor substrate, okuhlanganisa i-Si Wafer, i-SiC Substrate, i-SiN Substrate, i-Epi Wafer, njll., kanye nezinto ezintsha ze-bandgap semiconductor ezintsha ezifana ne-Gallium Oxide Ga2O3 ne-AlN Wafer. Le mikhiqizo ingahlangabezana nezidingo zohlelo lokusebenza zamakhasimende ahlukene kugesi wamandla, i-RF, izinzwa neminye imikhakha.

Ngokugxila ebuhleni, amawafa ethu e-SOI aphinde asebenzise izinto ezithuthukisiwe ezifana ne-gallium oxide Ga2O3, amakhasethi namawafa e-AlN ukuze aqinisekise ukwethembeka nokusebenza kahle kuwo wonke amazinga okusebenza. Thembela i-VET Energy ukuhlinzeka ngezixazululo ezisezingeni eliphezulu ezivula indlela yentuthuko yezobuchwepheshe.

Khipha amandla ephrojekthi yakho ngokusebenza okuphezulu kwama-VET Energy 12-inch SOI wafers. Thuthukisa amakhono akho okusungula ngamawafa ahlanganisa ikhwalithi, ukunemba kanye nokuqanjwa okusha, ukubeka isisekelo sempumelelo emkhakheni oguquguqukayo wobuchwepheshe be-semiconductor. Khetha i-VET Energy yezixazululo ze-premium ze-SOI ezidlula okulindelekile.

Ikhasi 6-36
Ikhasi 6-35

IMICIMBI YOKUFAKA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

Into

8-Intshi

6-Intshi

4-Intshi

nP

n-Pm

n-IHu

SI

SI

I-TTV(GBIR)

≤6um

≤6um

Umnsalo(GF3YFCD)-Inani Eliphelele

≤15μm

≤15μm

≤25μm

≤15μm

I-Warp(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

I-LTV(SBIR)-10mmx10mm

<2μm

I-Wafer Edge

Beveling

UBUHLUNGU QEDA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

Into

8-Intshi

6-Intshi

4-Intshi

nP

n-Pm

n-IHu

SI

SI

I-Surface Qeda

I-Double side Optical Polish, i-Si- Face CMP

I-SurfaceRoughness

(10um x 10um) I-Si-FaceRa≤0.2nm
I-C-Face Ra≤ 0.5nm

(5umx5um) I-Si-Face Ra≤0.2nm
I-C-Face Ra≤0.5nm

Ama-Edge Chips

Akukho okuvunyelwe (ubude nobubanzi≥0.5mm)

Izindebe

Akukho Okuvunyelwe

Imihuzuko(Si-Face)

Ubuningi.≤5,Okuqoqekile
Ubude≤0.5× ububanzi bewafa

Ubuningi.≤5,Okuqoqekile
Ubude≤0.5× ububanzi bewafa

Ubuningi.≤5,Okuqoqekile
Ubude≤0.5× ububanzi bewafa

Imifantu

Akukho Okuvunyelwe

Ukukhishwa komkhawulo

3mm

tech_1_2_size
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