6 Intshi N Uhlobo lweSiC Wafer

Incazelo emfushane:

I-SiC Wafer engu-6 Intshi N yohlobo olusuka ku-VET Energy iwuphawu oluphansi olusebenza kahle oluklanyelwe izinhlelo zokusebenza ezithuthukisiwe ze-semiconductor, enikeza ukuqhutshwa kwe-thermal okuphakeme nokusebenza kahle kwamandla. I-VET Energy isebenzisa ubuchwepheshe obusezingeni eliphezulu ukukhiqiza amawafa ekhwalithi ephezulu ahlangabezana nezidingo ezinzima zama-electronics wesimanje, aqinisekisa ukwethembeka nokuqina kumishini kagesi.

Thumela i-imeyili kithi Landa njenge-PDF

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Le Wafer engu-6 Inch N yohlobo lwe-SiC yakhelwe ukusebenza okuthuthukisiwe ezimeni ezimbi kakhulu, iyenze ibe ukukhetha okuhle ezinhlelweni ezidinga amandla aphezulu nokumelana nezinga lokushisa. Imikhiqizo engukhiye ehlotshaniswa nale wafer ihlanganisa i-Si Wafer, i-SiC Substrate, i-SOI Wafer, ne-SiN Substrate. Lezi zinto ezisetshenziswayo ziqinisekisa ukusebenza okuphelele ezinqubweni ezihlukahlukene zokukhiqiza ama-semiconductor, okunika amandla amadivayisi awonga amandla futhi ahlala isikhathi eside.

Ezinkampanini ezisebenza nge-Epi Wafer, Gallium Oxide Ga2O3, Cassette, noma AlN Wafer, 6 Inch N Type SiC Wafer ye-VET Energy inikeza isisekelo esidingekayo sokuthuthukiswa komkhiqizo omusha. Kungakhathaliseki ukuthi iku-electronics enamandla amakhulu noma ubuchwepheshe bamuva nje be-RF, lawa mawafa aqinisekisa ukusebenza kahle kakhulu kanye nokumelana nokushisa okuncane, ecindezela imingcele yokusebenza kahle nokusebenza.

IMICIMBI YOKUFAKA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into	8-Intshi	6-Intshi			4-Intshi
Into	nP	n-Pm	n-IHu	SI	SI
I-TTV(GBIR)	≤6um	≤6um
Umnsalo(GF3YFCD)-Inani Eliphelele	≤15μm	≤15μm	≤25μm		≤15μm
I-Warp(GF3YFER)	≤25μm	≤25μm	≤40μm		≤25μm
I-LTV(SBIR)-10mmx10mm	<2μm
I-Wafer Edge	Beveling

UBUHLUNGU QEDA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into	8-Intshi	6-Intshi			4-Intshi
	nP	n-Pm	n-IHu	SI	SI
I-Surface Qeda	I-Double side Optical Polish, i-Si- Face CMP
I-SurfaceRoughness	(10um x 10um) I-Si-FaceRa≤0.2nm I-C-Face Ra≤ 0.5nm			(5umx5um) I-Si-Face Ra≤0.2nm I-C-Face Ra≤0.5nm
Ama-Edge Chips	Akukho okuvunyelwe (ubude nobubanzi≥0.5mm)
Izindebe	Akukho Okuvunyelwe
Imihuzuko(Si-Face)	Ubuningi.≤5,Okuqongelelwe Ubude≤0.5× ububanzi bewafa	Ubuningi.≤5,Okuqongelelwe Ubude≤0.5× ububanzi bewafa			Ubuningi.≤5,Okuqongelelwe Ubude≤0.5× ububanzi bewafa
Imifantu	Akukho Okuvunyelwe
Ukukhishwa komkhawulo	3mm