Ukuhlanzeka okuphezulu okungu-8 Intshi yeSilicon Wafer

Incazelo emfushane:

Amawafa ama-silicon ama-intshi angu-8 e-VET Energy ayinketho yakho ekahle yokukhiqiza i-semiconductor. Enziwe kusetshenziswa ubuchwepheshe obuthuthukisiwe, lawa mawafa anekhwalithi enhle kakhulu yekristalu kanye nokuthambile kwendawo, okuwenza afanelekele ukwenziwa kwezinhlobonhlobo zamadivayisi e-microelectronic.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Ama-silicon wafers we-VET Energy angu-8 inch asetshenziswa kakhulu kuma-electronics, izinzwa, amasekethe ahlanganisiwe neminye imikhakha. Njengomholi embonini ye-semiconductor, sizibophezele ekuhlinzekeni ngemikhiqizo ye-Si Wafer esezingeni eliphezulu ukuze sihlangabezane nezidingo ezikhulayo zamakhasimende ethu.

Ngaphezu kwe-Si Wafer, i-VET Energy iphinde ihlinzeke ngezinhlobonhlobo zezinto zokwakha ze-semiconductor substrate, okuhlanganisa i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, i-Epi Wafer, njll. Umugqa wethu womkhiqizo uphinde uhlanganise izinto ezintsha ze-bandgap semiconductor ezifana ne-Gallium Oxide Ga2O3 ne-AlN. I-Wafer, ihlinzeka ngokusekela okuqinile ekuthuthukisweni kwamadivayisi kagesi anamandla esizukulwane esilandelayo.

I-VET Energy inemishini yokukhiqiza ethuthukisiwe kanye nesistimu yokuphatha ikhwalithi ephelele ukuze kuqinisekiswe ukuthi i-wafer ngayinye ihlangabezana nezindinganiso eziqinile zemboni. Imikhiqizo yethu ayinayo kuphela izinto ezinhle kakhulu zikagesi, kodwa futhi inamandla amahle emishini nokuzinza kokushisa.

I-VET Energy ihlinzeka amakhasimende ngezixazululo ezenziwe ngokwezifiso ze-wafer, okuhlanganisa amawafa anosayizi abahlukene, izinhlobo kanye nokugxila kwe-doping. Ngaphezu kwalokho, siphinde sinikeze ukwesekwa kwezobuchwepheshe kanye nesevisi yangemuva kokuthengisa ukuze sisize amakhasimende axazulule izinkinga ezihlukahlukene okuhlangatshezwane nazo phakathi nenqubo yokukhiqiza.

Ikhasi 6-36
Ikhasi 6-35

IMICIMBI YOKUFAKA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into

8-Intshi

6-Intshi

4-Intshi

nP

n-Pm

n-IHu

SI

SI

I-TTV(GBIR)

≤6um

≤6um

Umnsalo(GF3YFCD)-Inani Eliphelele

≤15μm

≤15μm

≤25μm

≤15μm

I-Warp(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

I-LTV(SBIR)-10mmx10mm

<2μm

I-Wafer Edge

Beveling

UBUHLUNGU QEDA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into

8-Intshi

6-Intshi

4-Intshi

nP

n-Pm

n-IHu

SI

SI

I-Surface Qeda

I-Double side Optical Polish, i-Si- Face CMP

I-SurfaceRoughness

(10um x 10um) I-Si-FaceRa≤0.2nm
I-C-Face Ra≤ 0.5nm

(5umx5um) I-Si-Face Ra≤0.2nm
I-C-Face Ra≤0.5nm

Ama-Edge Chips

Akukho okuvunyelwe (ubude nobubanzi≥0.5mm)

Izindebe

Akukho Okuvunyelwe

Imihuzuko(Si-Face)

Ubuningi.≤5,Okuqongelelwe
Ubude≤0.5× ububanzi bewafa

Ubuningi.≤5,Okuqongelelwe
Ubude≤0.5× ububanzi bewafa

Ubuningi.≤5,Okuqongelelwe
Ubude≤0.5× ububanzi bewafa

Imifantu

Akukho Okuvunyelwe

Ukukhishwa komkhawulo

3mm

tech_1_2_size
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