Ulayini womkhiqizo we-VET Energy awukhawulelwe ku-GaN kumawafa e-SiC. Siphinde futhi sinikeze ngezinhlobonhlobo zezinto ezisetshenziswayo ze-semiconductor substrate, okuhlanganisa i-Si Wafer, i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, i-Epi Wafer, njll. Ngaphezu kwalokho, sithuthukisa futhi ngenkuthalo izinto ezintsha ze-bandgap semiconductor ezintsha, njenge-Gallium Oxide Ga2O3 ne-AlN. I-Wafer, ukuhlangabezana nesidingo semboni yezogesi zamandla esizayo samadivayisi asebenza kakhulu.
I-VET Energy inikeza izinsizakalo zokwenza ngokwezifiso ezivumelana nezimo, futhi ingenza ngokwezifiso izingqimba ze-GaN epitaxial ezinobukhulu obuhlukahlukene, izinhlobo ezihlukene ze-doping, namasayizi ama-wafer ahlukene ngokuya ngezidingo ezithile zamakhasimende. Ngaphezu kwalokho, siphinde sinikeze ukwesekwa kobuchwepheshe obuchwepheshile kanye nesevisi yangemuva kokuthengisa ukuze sisize amakhasimende akhe ngokushesha amadivaysi kagesi asebenza ngamandla asebenza kakhulu.
IMICIMBI YOKUFAKA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation
Into | 8-Intshi | 6-Intshi | 4-Intshi | ||
nP | n-Pm | n-IHu | SI | SI | |
I-TTV(GBIR) | ≤6um | ≤6um | |||
Umnsalo(GF3YFCD)-Inani Eliphelele | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
I-Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
I-LTV(SBIR)-10mmx10mm | <2μm | ||||
I-Wafer Edge | Beveling |
UBUHLUNGU QEDA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation
Into | 8-Intshi | 6-Intshi | 4-Intshi | ||
nP | n-Pm | n-IHu | SI | SI | |
I-Surface Qeda | I-Double side Optical Polish, i-Si- Face CMP | ||||
I-SurfaceRoughness | (10um x 10um) I-Si-FaceRa≤0.2nm | (5umx5um) I-Si-Face Ra≤0.2nm | |||
Ama-Edge Chips | Akukho okuvunyelwe (ubude nobubanzi≥0.5mm) | ||||
Izindebe | Akukho Okuvunyelwe | ||||
Imihuzuko(Si-Face) | Ubuningi.≤5,Okuqongelelwe | Ubuningi.≤5,Okuqongelelwe | Ubuningi.≤5,Okuqongelelwe | ||
Imifantu | Akukho Okuvunyelwe | ||||
Ukukhishwa komkhawulo | 3mm |