I-4 Intshi ye-GaN ku-SiC Wafer

4 Intshi GaN kuSiC Wafer Isithombe Esifakiwe

Incazelo emfushane:

I-VET Energy's 4-inch GaN ku-SiC wafer ingumkhiqizo onenguquko emkhakheni we-power electronics. Lesi silucwecwana sihlanganisa ukuguquguquka okuhle kakhulu kokushisa kwe-silicon carbide (SiC) nokuminyana kwamandla okuphezulu nokulahlekelwa okuphansi kwe-gallium nitride (GaN), okuyenza ibe ukukhetha okuhle ekwenzeni amadivaysi asebenzisa imvamisa ephezulu, amandla aphezulu. I-VET Energy iqinisekisa ukusebenza okuhle kakhulu nokuvumelana kwe-wafer ngokusebenzisa ubuchwepheshe obuphambili be-MOCVD epitaxial.

Thumela i-imeyili kithi Landa njenge-PDF

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Ulayini womkhiqizo we-VET Energy awukhawulelwe ku-GaN kumawafa e-SiC. Siphinde futhi sinikeze ngezinhlobonhlobo zezinto ezisetshenziswayo ze-semiconductor substrate, okuhlanganisa i-Si Wafer, i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, i-Epi Wafer, njll. Ngaphezu kwalokho, sithuthukisa futhi ngenkuthalo izinto ezintsha ze-bandgap semiconductor ezintsha, njenge-Gallium Oxide Ga2O3 ne-AlN. I-Wafer, ukuhlangabezana nesidingo semboni yezogesi zamandla esizayo samadivayisi asebenza kakhulu.

I-VET Energy inikeza izinsizakalo zokwenza ngokwezifiso ezivumelana nezimo, futhi ingenza ngokwezifiso izingqimba ze-GaN epitaxial ezinobukhulu obuhlukahlukene, izinhlobo ezihlukene ze-doping, namasayizi ama-wafer ahlukene ngokuya ngezidingo ezithile zamakhasimende. Ngaphezu kwalokho, siphinde sinikeze ukwesekwa kobuchwepheshe obuchwepheshile kanye nesevisi yangemuva kokuthengisa ukuze sisize amakhasimende akhe ngokushesha amadivaysi kagesi asebenza ngamandla asebenza kakhulu.

IMICIMBI YOKUFAKA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

Into	8-Intshi	6-Intshi			4-Intshi
Into	nP	n-Pm	n-IHu	SI	SI
I-TTV(GBIR)	≤6um	≤6um
Umnsalo(GF3YFCD)-Inani Eliphelele	≤15μm	≤15μm	≤25μm		≤15μm
I-Warp(GF3YFER)	≤25μm	≤25μm	≤40μm		≤25μm
I-LTV(SBIR)-10mmx10mm	<2μm
I-Wafer Edge	Beveling

UBUHLUNGU QEDA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

Into	8-Intshi	6-Intshi			4-Intshi
	nP	n-Pm	n-IHu	SI	SI
I-Surface Qeda	I-Double side Optical Polish, i-Si- Face CMP
I-SurfaceRoughness	(10um x 10um) I-Si-FaceRa≤0.2nm I-C-Face Ra≤ 0.5nm			(5umx5um) I-Si-Face Ra≤0.2nm I-C-Face Ra≤0.5nm
Ama-Edge Chips	Akukho okuvunyelwe (ubude nobubanzi≥0.5mm)
Izindebe	Akukho Okuvunyelwe
Imihuzuko(Si-Face)	Ubuningi.≤5,Okuqoqekile Ubude≤0.5× ububanzi bewafa	Ubuningi.≤5,Okuqoqekile Ubude≤0.5× ububanzi bewafa			Ubuningi.≤5,Okuqoqekile Ubude≤0.5× ububanzi bewafa
Imifantu	Akukho Okuvunyelwe
Ukukhishwa komkhawulo	3mm