6 Intshi P Uhlobo lweSilicon Wafer

Incazelo emfushane:

I-VET Energy 6-inch P-type silicon wafer isezingeni eliphezulu le-semiconductor base material, esetshenziswa kabanzi ekwenzeni izinto ezahlukene zikagesi. I-VET Energy isebenzisa inqubo ethuthukisiwe yokukhula ye-CZ ukuze kuqinisekiswe ukuthi iwafa inekhwalithi enhle kakhulu yekristalu, ukuminyana okunesici esiphansi kanye nokufana okuphezulu.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Ulayini womkhiqizo we-VET Energy awukhawulelwe kumawafa e-silicon. Siphinde futhi sinikeze ngezinhlobonhlobo zezinto ezisetshenziswayo ze-semiconductor substrate, okuhlanganisa i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, i-Epi Wafer, njll., kanye nezinto ezintsha ze-bandgap semiconductor ezintsha ezifana ne-Gallium Oxide Ga2O3 ne-AlN Wafer. Le mikhiqizo ingahlangabezana nezidingo zohlelo lokusebenza zamakhasimende ahlukene kugesi wamandla, imvamisa yomsakazo, izinzwa kanye neminye imikhakha.

Izinkambu zohlelo lokusebenza:
Amasekhethi ahlanganisiwe:Njengezinto eziyisisekelo zokwenziwa kwesekethe edidiyelwe, ama-wafers we-silicon wohlobo lwe-P asetshenziswa kabanzi kumasekethe anengqondo ahlukahlukene, izinkumbulo, njll.
Amadivayisi kagesi:Ama-silicon wafers ohlobo lwe-P angasetshenziswa ukwenza amadivayisi kagesi njengama-transistors amandla nama-diode.
Izinzwa:Ama-silicon wafers ohlobo lwe-P angasetshenziswa ukwenza izinhlobo ezahlukene zezinzwa, njengezinzwa zokucindezela, izinzwa zokushisa, njll.
Amaseli elanga:Ama-silicon wafers wohlobo lwe-P ayingxenye ebalulekile yamaseli elanga.

I-VET Energy ihlinzeka amakhasimende ngezixazululo ezenziwe ngezifiso ze-wafer, futhi ingenza ngendlela oyifisayo ama-wafers ane-resistivity ehlukene, okuqukethwe komoya-mpilo okuhlukile, ukujiya okuhlukile nokunye ukucaciswa ngokuya ngezidingo ezithile zamakhasimende. Ngaphezu kwalokho, siphinde sinikeze ukwesekwa kwezobuchwepheshe okuqeqeshiwe kanye nesevisi yangemuva kokuthengisa ukusiza amakhasimende axazulule izinkinga ezihlukahlukene ezihlangatshezwane nenqubo yokukhiqiza.

Ikhasi 6-36
Ikhasi 6-35

IMICIMBI YOKUFAKA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into

8-Intshi

6-Intshi

4-Intshi

nP

n-Pm

n-IHu

SI

SI

I-TTV(GBIR)

≤6um

≤6um

Umnsalo(GF3YFCD)-Inani Eliphelele

≤15μm

≤15μm

≤25μm

≤15μm

I-Warp(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

I-LTV(SBIR)-10mmx10mm

<2μm

I-Wafer Edge

Beveling

UBUHLUNGU QEDA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into

8-Intshi

6-Intshi

4-Intshi

nP

n-Pm

n-IHu

SI

SI

I-Surface Qeda

I-Double side Optical Polish, i-Si- Face CMP

I-SurfaceRoughness

(10um x 10um) I-Si-FaceRa≤0.2nm
I-C-Face Ra≤ 0.5nm

(5umx5um) I-Si-Face Ra≤0.2nm
I-C-Face Ra≤0.5nm

Ama-Edge Chips

Akukho okuvunyelwe (ubude nobubanzi≥0.5mm)

Izindebe

Akukho Okuvunyelwe

Imihuzuko(Si-Face)

Ubuningi.≤5,Okuqongelelwe
Ubude≤0.5× ububanzi bewafa

Ubuningi.≤5,Okuqongelelwe
Ubude≤0.5× ububanzi bewafa

Ubuningi.≤5,Okuqongelelwe
Ubude≤0.5× ububanzi bewafa

Imifantu

Akukho Okuvunyelwe

Ukukhishwa komkhawulo

3mm

tech_1_2_size
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