Ulayini womkhiqizo we-VET Energy awukhawulelwe kumawafa e-silicon. Siphinde futhi sinikeze ngezinhlobonhlobo zezinto ezisetshenziswayo ze-semiconductor substrate, okuhlanganisa i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, i-Epi Wafer, njll., kanye nezinto ezintsha ze-bandgap semiconductor ezintsha ezifana ne-Gallium Oxide Ga2O3 ne-AlN Wafer. Le mikhiqizo ingahlangabezana nezidingo zohlelo lokusebenza zamakhasimende ahlukene kugesi wamandla, imvamisa yomsakazo, izinzwa kanye neminye imikhakha.
Izinkambu zohlelo lokusebenza:
•Amasekhethi ahlanganisiwe:Njengezinto eziyisisekelo zokwenziwa kwesekethe edidiyelwe, ama-wafers we-silicon wohlobo lwe-P asetshenziswa kabanzi kumasekethe anengqondo ahlukahlukene, izinkumbulo, njll.
•Amadivayisi kagesi:Ama-silicon wafers ohlobo lwe-P angasetshenziswa ukwenza amadivayisi kagesi njengama-transistors amandla nama-diode.
•Izinzwa:Ama-silicon wafers ohlobo lwe-P angasetshenziswa ukwenza izinhlobo ezahlukene zezinzwa, njengezinzwa zokucindezela, izinzwa zokushisa, njll.
•Amaseli elanga:Ama-silicon wafers wohlobo lwe-P ayingxenye ebalulekile yamaseli elanga.
I-VET Energy ihlinzeka amakhasimende ngezixazululo ezenziwe ngezifiso ze-wafer, futhi ingenza ngendlela oyifisayo ama-wafers ane-resistivity ehlukene, okuqukethwe komoya-mpilo okuhlukile, ukujiya okuhlukile nokunye ukucaciswa ngokuya ngezidingo ezithile zamakhasimende. Ngaphezu kwalokho, siphinde sinikeze ukwesekwa kwezobuchwepheshe okuqeqeshiwe kanye nesevisi yangemuva kokuthengisa ukusiza amakhasimende axazulule izinkinga ezihlukahlukene ezihlangatshezwane nenqubo yokukhiqiza.
IMICIMBI YOKUFAKA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation
Into | 8-Intshi | 6-Intshi | 4-Intshi | ||
nP | n-Pm | n-IHu | SI | SI | |
I-TTV(GBIR) | ≤6um | ≤6um | |||
Umnsalo(GF3YFCD)-Inani Eliphelele | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
I-Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
I-LTV(SBIR)-10mmx10mm | <2μm | ||||
I-Wafer Edge | Beveling |
UBUHLUNGU QEDA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation
Into | 8-Intshi | 6-Intshi | 4-Intshi | ||
nP | n-Pm | n-IHu | SI | SI | |
I-Surface Qeda | I-Double side Optical Polish, i-Si- Face CMP | ||||
I-SurfaceRoughness | (10um x 10um) I-Si-FaceRa≤0.2nm | (5umx5um) I-Si-Face Ra≤0.2nm | |||
Ama-Edge Chips | Akukho okuvunyelwe (ubude nobubanzi≥0.5mm) | ||||
Izindebe | Akukho Okuvunyelwe | ||||
Imihuzuko(Si-Face) | Ubuningi.≤5,Okuqongelelwe | Ubuningi.≤5,Okuqongelelwe | Ubuningi.≤5,Okuqongelelwe | ||
Imifantu | Akukho Okuvunyelwe | ||||
Ukukhishwa komkhawulo | 3mm |