6 Inch N Iru SiC Wafer yii jẹ iṣẹ-ṣiṣe fun imudara iṣẹ ni awọn ipo to gaju, ṣiṣe ni yiyan ti o dara julọ fun awọn ohun elo ti o nilo agbara giga ati iwọn otutu. Awọn ọja pataki ti o ni nkan ṣe pẹlu wafer yii pẹlu Si Wafer, SiC Substrate, SOI Wafer, ati Sobusitireti SiN. Awọn ohun elo wọnyi ṣe idaniloju iṣẹ ṣiṣe ti o dara julọ ni ọpọlọpọ awọn ilana iṣelọpọ semikondokito, awọn ẹrọ ti n muu ṣiṣẹ ti o jẹ agbara-daradara ati ti o tọ.
Fun awọn ile-iṣẹ ti n ṣiṣẹ pẹlu Epi Wafer, Gallium Oxide Ga2O3, Cassette, tabi AlN Wafer, VET Energy's 6 Inch N Iru SiC Wafer pese ipilẹ pataki fun idagbasoke ọja tuntun. Boya o wa ninu ẹrọ itanna ti o ni agbara giga tabi tuntun ni imọ-ẹrọ RF, awọn wafers wọnyi ṣe idaniloju ifarapa ti o dara julọ ati resistance igbona kekere, titari awọn aala ti ṣiṣe ati iṣẹ ṣiṣe.
WAFERING ni pato
*n-Pm=n-iru Pm-Grade,n-Ps=n-iru Ps-Grade,Sl=Ogbede-lnsulating
| Nkan | 8-inch | 6-inch | 4-inch | ||
| nP | n-Pm | n-Ps | SI | SI | |
| TTV(GBIR) | ≤6um | ≤6um | |||
| Teriba (GF3YFCD) -Iye to peye | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
| Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
| LTV (SBIR) -10mmx10mm | <2μm | ||||
| Wafer eti | Beveling | ||||
Ipari dada
*n-Pm=n-iru Pm-Grade,n-Ps=n-iru Ps-Grade,Sl=Ogbede-lnsulating
| Nkan | 8-inch | 6-inch | 4-inch | ||
| nP | n-Pm | n-Ps | SI | SI | |
| Dada Ipari | Polish Optical ẹgbẹ meji, Si- Face CMP | ||||
| SurfaceRoughness | (10um x 10um) Si-FaceRa≤0.2nm | (5umx5um) Si-Face Ra≤0.2nm | |||
| Awọn eerun eti | Ko si Gbigbanilaaye (ipari ati iwọn≥0.5mm) | ||||
| Indents | Ko si Iyọọda | ||||
| Awọn idọti (Si-Face) | Qty.≤5, Akopọ | Qty.≤5, Akopọ | Qty.≤5, Akopọ | ||
| Awọn dojuijako | Ko si Iyọọda | ||||
| Iyasoto eti | 3mm | ||||
