Iholeyili yeOEM/ODM GaN-Basedepitaxial kwiiSubstrates zeSic 4′′

Iholeyili yeOEM/ODM GaN-Basedepitaxial kwiSic Substrates 4′′ Umfanekiso ofakiweyo

Inkcazelo emfutshane:

Abathwali be-wafer abasetyenziswa ekuqhubeni ukukhula kwe-epitaxial kufuneka banyamezele amaqondo obushushu aphezulu kunye nokucoca imichiza eqatha. I-CoorsTek Clear Carbon™ susceptors zenzelwe ngokukodwa ezi zicelo ze-epitaxy ezifunwayo. Ulwakhiwo lwabo oluphezulu lwesilicon carbide (SiC) olugqunywe ngegraphite lubonelela ngamandla okumelana nobushushu, nkqu nokufana kwe-thermal kubunzima obungaguqukiyo bomaleko we-epi kunye nokuxhathisa, kunye nokunganyangeki kweekhemikhali. Ukwaleka kwekristale ye-SiC ecocekileyo ibonelela ngomphezulu ococekileyo, ogudileyo, obaluleke kakhulu ekuphathweni kuba ii-wafers ezicocekileyo zinxibelelana ne-susceptor kwiindawo ezininzi kwindawo yazo yonke.

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

Ngokwenene yindlela elungileyo yokunyusa iimveliso zethu kunye nezisombululo kunye nokulungiswa. Injongo yethu kufuneka ibe kukuvelisa iimveliso ezicingelwayo kunye nezisombululo kubathengi usebenzisa amava asebenzayo amangalisayo kwiWholesale yeOEM/ODM GaN-Basedepitaxial kwiSic Substrates 4′′, Sigxile ekwakhiweni kohlobo olulolwakhe kwaye kudityaniswe nezinto ezininzi ezibonisa amava kunye nezixhobo zodidi lokuqala. . Iimpahla zethu onazo.
Ngokwenene yindlela elungileyo yokunyusa iimveliso zethu kunye nezisombululo kunye nokulungiswa. Injongo yethu kufuneka ibe kukuvelisa iimveliso ezicingelwayo kunye nezisombululo kubaxumi usebenzisa amava okusebenza amnandiI-China ye-GaN Substrates kunye ne-GaN Film, Ngoluhlu olubanzi, umgangatho olungileyo, amaxabiso afanelekileyo kunye noyilo olunesitayile, urhwebo lwethu lusetyenziswa kakhulu kubuhle nakwamanye amashishini. Iimveliso zethu kunye nezisombululo zibonwa ngokubanzi kwaye zithenjwa ngabasebenzisi kwaye zinokuhlangabezana ngokuqhubekayo nokutshintsha iimfuno zoqoqosho nezentlalo.

SiC ukutyabeka igraphite MOCVD abathwali Wafer

Zonke i-susceptors zethu zenziwe nge-graphite ye-isostatic ephezulu. Ukuxhamla kubunyulu obuphezulu beegrafu zethu - eziphuhliswe ngokukodwa kwiinkqubo ezicela umngeni ezifana ne-epitaxy, ukukhula kwekristale, ukufakwa kwe-ion kunye ne-plasma etching, kunye nokuveliswa kweetshiphusi ze-LED.

Ingcaciso yeMveliso
Ukufakwa kwe-SiC ye-Graphite substrate yezicelo ze-Semiconductor ivelisa inxalenye enobunyulu obuphezulu kunye nokumelana nomoya we-oxidizing.
I-CVD SiC okanye i-CVI SiC isetyenziswa kwiGraphite yeendawo ezilula okanye ezintsonkothileyo zoyilo. Ukugquma kungasetyenziswa kubunzima obuhlukeneyo kunye namalungu amakhulu kakhulu.

Ikhomponi

SiC ukutyabeka igraphite MOCVD abathwali Wafer

Izinto eziluncedo ezikhethekileyo ze-SiC-coated graphite susceptors ziquka ukucoceka okuphezulu kakhulu, ukugquma okulinganayo kunye nobomi benkonzo obugqwesileyo. Kananjalo banokumelana neekhemikhali eziphezulu kunye neempawu zokuzinza kwe-thermal.

Sigcina ukunyamezelana ngokusondeleyo xa sisebenzisa i-SiC coating, sisebenzisa i-high-precision machining ukuqinisekisa iprofayili ye-susceptor efanayo. Siphinda sivelise izixhobo ezineempawu ezifanelekileyo zokuxhathisa umbane ukuze zisetyenziswe kwiinkqubo ezifudumalayo. Zonke izinto ezigqityiweyo ziza kunye nesatifikethi sokuthotyelwa kobunyulu kunye nobukhulu.

Isicelo:

Iimbonakalo:
· Okugqwesileyo kweThermal Shock Resistance
· Okugqwesileyo koKuxhathisa ukothuka koMzimba
· Ukumelana neMichiza okugqwesileyo
· Ukucoceka okuphezulu okuphezulu
· Ukufumaneka kobume obuntsonkothileyo
· Isetyenziswa phantsi kwe-Oxidizing AtmosphereIinkcazelo Ngeempawu zeSiseko seMathiriyeli yeGrafite:

Uxinzelelo olubonakalayo:	1.85 g/cm3
Ukuxhathisa koMbane:	11 μΩm
Ukuqina kweFlexural:	49 MPa (500kgf/cm2)
Ukuqina konxweme:	58
Uthuthu:	<5ppm
I-Thermal Conductivity:	116 W/mK (100 kcal/mhr-℃)

Ngokwenene yindlela elungileyo yokunyusa iimveliso zethu kunye nezisombululo kunye nokulungiswa. Injongo yethu kufuneka ibe kukuvelisa iimveliso ezicingelwayo kunye nezisombululo kubathengi usebenzisa amava asebenzayo amangalisayo kwiWholesale yeOEM/ODM GaN-Basedepitaxial kwiSic Substrates 4′′, Sigxile ekwakhiweni kohlobo olulolwakhe kwaye kudityaniswe nezinto ezininzi ezibonisa amava kunye nezixhobo zodidi lokuqala. . Iimpahla zethu onazo.
Iholeyili yeOEM/ODMI-China ye-GaN Substrates kunye ne-GaN Film, Ngoluhlu olubanzi, umgangatho olungileyo, amaxabiso afanelekileyo kunye noyilo olunesitayile, urhwebo lwethu lusetyenziswa kakhulu kubuhle nakwamanye amashishini. Iimveliso zethu kunye nezisombululo zibonwa ngokubanzi kwaye zithenjwa ngabasebenzisi kwaye zinokuhlangabezana ngokuqhubekayo nokutshintsha iimfuno zoqoqosho nezentlalo.