Isifudumezi seGraphite Silicon carbide (SiC) iSiC yokwambathisa iSiC iqatywe

Inkcazelo emfutshane:

Ipotfoliyo yethu ibandakanya izifudumezi, ii-crucibles zokuxhasa, izikhuselo zobushushu kunye nezixhobo zokugquma kwiinkqubo ezininzi zokukhulisa ikristale kunye nezixhobo.

Sikwabonelela ngee-susceptors ze-silicon epitaxy kunye ne-MOCVD reactors. Eyaziwayo ngomgangatho wethu ophezulu kunye nokuveliswa komntu ngamnye, sinikezela ngokugqitywa kwesicelo esithile ngokucoca, ukusetyenzwa ngoomatshini okanye ukugquma.


Iinkcukacha zeMveliso

Iithegi zeMveliso

 

Inkcazo yobuGcisa

IVET-M3

Ubuninzi Bobuninzi (g/cm3)

≥1.85

Umxholo wothuthu (PPM)

≤500

Ukuqina konxweme

≥45

Ukuchasa okuKhethekileyo (μ.Ω.m)

≤12

Amandla e-Flexural (Mpa)

≥40

Amandla acinezelayo (Mpa)

≥70

Max. Ubungakanani bozinkozo (μm)

≤43

I-Coefficient yoKwandiswa kweThermal Mm/°C

≤4.4 * 10-6

 

 

Iimveliso ezintsha zamva nje zesifudumezi segrafu Iinzuzo kukugcina amandla, ixabiso eliphezulu kunye neendleko eziphantsi zogcino.

Iimveliso ezintsha zamva nje zesifudumezi segrafu Iinzuzo kukugcina amandla, ixabiso eliphezulu kunye neendleko eziphantsi zogcino.

Iimveliso ezintsha zamva nje zesifudumezi segrafu Iinzuzo kukugcina amandla, ixabiso eliphezulu kunye neendleko eziphantsi zogcino.

Iinkcukacha zokupakisha:

Iimveliso ezintsha zamva nje zesifudumezi segrafu Iinzuzo kukugcina amandla, ixabiso eliphezulu kunye neendleko eziphantsi zogcino.


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