Ixabiso elihlawulelwayo GaN-Basedepitaxial kwiSic Substrates 4′′

Ixabiso elihlawulelwayo i-GaN-Basedepitaxial kwi-Sic Substrates 4′′ Umfanekiso ofakiweyo

Inkcazelo emfutshane:

Abathwali be-wafer abasetyenziselwa ukusetyenzwa kokukhula kwe-epitaxial kufuneka banyamezele amaqondo obushushu aphezulu kunye nokucoca iikhemikhali ezinzima.I-CoorsTek Clear Carbon™ susceptors zenzelwe ngokukodwa ezi zicelo ze-epitaxy ezifunwayo.Ulwakhiwo lwabo oluphezulu lwesilicon carbide (SiC) olugqunywe ngegraphite lubonelela ngamandla okumelana nobushushu, nkqu nokufana kwe-thermal kubunzima obungaguqukiyo bomaleko we-epi kunye nokuxhathisa, kunye nokunganyangeki kweekhemikhali.Ukwaleka kwekristale ye-SiC ecocekileyo ibonelela ngomphezulu ococekileyo, ogudileyo, obaluleke kakhulu ekuphathweni kuba ii-wafers ezicocekileyo zinxibelelana ne-susceptor kwiindawo ezininzi kwindawo yazo yonke.

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

Ngoku sinabasebenzi abanobuchule obuphezulu bokujongana nemibuzo evela kubathengi.Injongo yethu “yi-100% yokuzaliseka kwabathengi ngemveliso okanye inkonzo egqwesileyo, ixabiso lokuthengisa kunye nenkonzo yethu yabasebenzi” kwaye sifumane ukonwabela ukuthandwa okukhulu phakathi kwabathengi.Ngobuninzi beefektri, sinokunikezela ngexabiso elithengiweyo iGaN-Basedepitaxial kwiSic Substrates 4′′, Samkela ngezandla ezishushu amaqabane amashishini amancinci aphuma kuzo zonke iindlela zokuphila, sinethemba lokuseka ishishini elinobuhlobo kunye nentsebenziswano linxibelelane nawe kwaye sizuze. injongo yokuphumelela.
Ngoku sinabasebenzi abanobuchule obuphezulu bokujongana nemibuzo evela kubathengi.Injongo yethu “yi-100% yokuzaliseka kwabathengi ngemveliso okanye inkonzo egqwesileyo, ixabiso lokuthengisa kunye nenkonzo yethu yabasebenzi” kwaye sifumane ukonwabela ukuthandwa okukhulu phakathi kwabathengi.Ngeefektri ezininzi, sinokunikezela ngeendlela ezahlukeneyoI-China ye-GaN Substrates kunye ne-GaN Film, Sijonge phambili ngokunyanisekileyo ukusebenzisana nabathengi kwihlabathi liphela.Sikholelwa ukuba sinokukwanelisa ngeemveliso zethu ezikumgangatho ophezulu kunye nenkonzo egqibeleleyo.Sikwamkele ngokufudumeleyo abathengi ukuba bandwendwele inkampani yethu kwaye bathenge iimveliso zethu.

SiC ukutyabeka igraphite MOCVD abathwali Wafer

Zonke i-susceptors zethu zenziwe nge-graphite ye-isostatic ephezulu.Ukuxhamla kubunyulu obuphezulu beegrafu zethu - eziphuhliswe ngokukodwa kwiinkqubo ezicela umngeni ezifana ne-epitaxy, ukukhula kwekristale, ukufakwa kwe-ion kunye ne-plasma etching, kunye nokuveliswa kweetshiphusi ze-LED.

Ingcaciso yeMveliso
Ukufakwa kwe-SiC ye-Graphite substrate yezicelo ze-Semiconductor ivelisa inxalenye enobunyulu obuphezulu kunye nokumelana nomoya we-oxidizing.
I-CVD SiC okanye i-CVI SiC isetyenziswa kwiGraphite yeendawo ezilula okanye ezintsonkothileyo zoyilo.Ukugquma kungasetyenziswa kubunzima obuhlukeneyo kunye neendawo ezinkulu kakhulu.

Ikhomponi

SiC ukutyabeka igraphite MOCVD abathwali Wafer

Izinto eziluncedo ezikhethekileyo ze-SiC-coated graphite susceptors ziquka ukucoceka okuphezulu kakhulu, ukugquma okulinganayo kunye nobomi benkonzo obugqwesileyo.Kananjalo banokumelana neekhemikhali eziphezulu kunye neempawu zokuzinza kwe-thermal.

Sigcina ukunyamezelana ngokusondeleyo xa sisebenzisa i-SiC coating, usebenzisa i-high-precision machining ukuqinisekisa iprofayili ye-susceptor efanayo.Siphinda sivelise izixhobo ezineempawu ezifanelekileyo zokuxhathisa umbane ukuze zisetyenziswe kwiinkqubo ezitshisayo.Onke amacandelo agqityiweyo aza kunye nesatifikethi sokuthotyelwa kobunyulu kunye nobukhulu.

Isicelo:

Iimbonakalo:
· Okugqwesileyo kweThermal Shock Resistance
· Okugqwesileyo koKuxhathisa ukothuka koMzimba
· Ukumelana neMichiza okugqwesileyo
· Ukucoceka okuphezulu okuphezulu
· Ukufumaneka kobume obuntsonkothileyo
· Isetyenziswa phantsi kwe-Oxidizing AtmosphereIinkcazelo Ngeempawu zeSiseko seMathiriyeli yeGraphite:

Uxinzelelo olubonakalayo:	1.85 g/cm3
Ukuxhathisa koMbane:	11 μΩm
Ukuqina kweFlexural:	49 MPa (500kgf/cm2)
Ukuqina konxweme:	58
Uthuthu:	<5ppm
I-Thermal Conductivity:	116 W/mK (100 kcal/mhr-℃)

Ngoku sinabasebenzi abanobuchule obuphezulu bokujongana nemibuzo evela kubathengi.Injongo yethu “yi-100% yokuzaliseka kwabathengi ngemveliso okanye inkonzo egqwesileyo, ixabiso lokuthengisa kunye nenkonzo yethu yabasebenzi” kwaye sifumane ukonwabela ukuthandwa okukhulu phakathi kwabathengi.Ngobuninzi beefektri, sinokunikezela ngexabiso elithengiweyo iGaN-Basedepitaxial kwiSic Substrates 4′′, Samkela ngezandla ezishushu amaqabane amashishini amancinci aphuma kuzo zonke iindlela zokuphila, sinethemba lokuseka ishishini elinobuhlobo kunye nentsebenziswano linxibelelane nawe kwaye sizuze. injongo yokuphumelela.
Ixabiso elihlawulelwayoI-China ye-GaN Substrates kunye ne-GaN Film, Sijonge phambili ngokunyanisekileyo ukusebenzisana nabathengi kwihlabathi liphela.Sikholelwa ukuba sinokukwanelisa ngeemveliso zethu ezikumgangatho ophezulu kunye nenkonzo egqibeleleyo.Sikwamkele ngokufudumeleyo abathengi ukuba bandwendwele inkampani yethu kwaye bathenge iimveliso zethu.