I-SiC Coated Graphite Carrier / Susceptor

SiC Coated Graphite Carrier / Susceptor Featured Image

Inkcazelo emfutshane:

I-VET Energy SiC Coated Graphite Carrier/Susceptor yimveliso ephezulu yokusebenza eyilelwe ukubonelela ngokusebenza okungaguqukiyo nokuthembekileyo kwixesha elongeziweyo.Inokumelana nobushushu obuhle kakhulu kunye nokufana kwe-thermal, ukucoceka okuphezulu, ukuxhathisa ukhukuliseko, kuyenza ibe sisisombululo esifanelekileyo sokusetyenzwa kwe-wafer.

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Iinkcukacha zeMveliso

Iithegi zeMveliso

I-SiC coated suscetpor licandelo eliphambili elisetyenziswa kwiinkqubo ezahlukeneyo zokwenziwa kwe-semiconductor.Sisebenzisa itekhnoloji yethu enelungelo elilodwa lomenzi wechiza ukwenza i-Suscetpor egqunywe nge-SiC ngobunyulu obuphezulu, ukufana okuhle kokugquma kunye nobomi benkonzo obugqwesileyo, kunye nokuxhathisa okuphezulu kweekhemikhali kunye neempawu zokuzinza kwe-thermal.

Iimpawu zeemveliso zethu:

1. Ukumelana nobushushu obuphezulu be-oxidation ukuya kuthi ga kwi-1700 ℃.
2. Ukucoceka okuphezulu kunye nokufana kwe-thermal
3. Ukumelana nokugqwesa okugqwesileyo: i-asidi, i-alkali, ityuwa kunye ne-organic reagents.
4. Ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.
5. Ubomi benkonzo ende kwaye buhlala ixesha elide

CVD SiC薄膜基本物理性能 Iimpawu ezisisiseko ze-CVD SiCukutyabeka
性质 / Ipropati	典型数值 / Ixabiso eliqhelekileyo
晶体结构 / Ulwakhiwo lweCrystal	iFCC β isigaba多晶，主要為（111）取向
密度 / Ubuninzi	3.21 g/cm³
硬度 / Ukuqina	2500 维氏硬度 (500g umthwalo)
晶粒大小 / Iinkozo uSiZe	2 ~ 10μm
纯度 / Ukucoceka kwemichiza	99.99995%
热容 / Umthamo wobushushu	640 J·kg^-1·K^-1
升华温度 / Iqondo lobushushu elisezantsi	2700℃
抗弯强度 / Amandla e-Flexural	415 MPa RT 4-point
杨氏模量 / Imodyuli yabaselula	430 Gpa 4pt bend, 1300℃
导热系数 / ThermalUkuqhuba	300Wm^-1·K^-1
热膨胀系数 / Ukwandiswa kweThermal(CTE)	4.5×10^-6K^-1