Inkcazo:
I-Silicon Carbide inepropathi ye-resistant-corrosion egqwesileyo, amandla aphezulu omatshini, ukugcwala okuphezulu kwe-thermal, ukuthambisa okulungileyo okusetyenziselwa njengobuso betywina, iibheringi kunye neetyhubhu kwisiphekepheke, oomatshini, isinyithi, ukuprinta kunye nokudaya, ukutya, amayeza, ishishini lemoto njalo njalo. kwi. Xa ubuso be-sic zidityaniswe nobuso begraphite ukukhuhlana yeyona nto incinci kwaye ingenziwa ibe ngamatywina omatshini akwazi ukusebenza kwiimfuno eziphezulu zokusebenza.
Iipropati zeSilicon Carbide eziSisiseko:
-Ukuxinana okuphantsi
-I-thermal conductivity ephezulu (kufuphi ne-aluminium)
-Ukumelana kakuhle nokothuka kwe-thermal
-Ubungqina bolwelo kunye negesi
-I-refractoriness ephezulu (inokusetyenziswa kwi-1450 ℃ emoyeni kunye ne-1800 ℃ kwindawo engathathi hlangothi)
-Ayichatshazelwa ngumhlwa kwaye ayimanzi nge-aluminium enyibilikisiweyo okanye i-zinc enyibilikisiweyo.
-Ukuqina okuphezulu
-I-coefficient yokukhuhlana okuphantsi
-Ukuxhathisa i-abrasion
-Uxhathisa kwii-asidi ezisisiseko kunye nezomeleleyo
-Iyaphucuka
-Amandla omatshini aphezulu
Isicelo seSilicon Carbide:
-Izitywina zoomatshini, iibheringi, iibheringi zethrust, njl
-Amalungu ajikelezayo
-Semiconductor kunye nokwaleka
-Piintengiso Pump amacandelo
-Amacandelo amachiza
-Izibuko zeenkqubo zelaser zoshishino.
- Ii-reactors ezihamba ngokuqhubekayo, abatshintshi bobushushu, njl.
Uphawu
I-silicon carbide yenziwe ngeendlela ezimbini:
1)Pi-silicon carbide engaqinisekanga
Emva kokuba kufakwe i-silicon carbide impahla engenaxinzelelo, i-crystal phase diagram phantsi kwe-200X optical microscope ibonisa ukuba ukuhanjiswa kunye nobukhulu beekristali zifana, kwaye i-crystal enkulu ayidluli i-10μm.
2) Reaction sintered silicon carbide
Emva kokuba i-silicon carbide isabela ngokwekhemikhali iphatha icandelo elisicaba kunye neligudileyo lezinto, ikristale
ukusabalalisa kunye nobukhulu phantsi kwe-microscope ye-200X ebonakalayo ifana, kwaye umxholo we-silicon wamahhala awudluli kwi-12%.
| Iimpawu zobuGcisa | |||
| Isalathiso | Iyunithi | Ixabiso | |
| Igama leMathiriyeli | Uxinzelelo lweSilicon Carbide engenaxinzelelo | Ukusabela Sintered Silicon Carbide | |
| Ukuqamba | I-SSiC | I-RBSiC | |
| Unizi lolwapho kuyiwa khona | g/cm3 | 3.15 ± 0.03 | 3 |
| Amandla e-Flexural | MPa (kpsi) | 380(55) | 338(49) |
| Amandla acinezelayo | MPa (kpsi) | 3970(560) | 1120(158) |
| Ukuqina | Knoop | 2800 | 2700 |
| Ukuqhawula ukuqina | IMPa m1/2 | 4 | 4.5 |
| I-Thermal Conductivity | W/mk | 120 | 95 |
| I-Coefficient yoKwandiswa kweThermal | 10-6/°C | 4 | 5 |
| Ubushushu obuthile | Joule/g 0k | 0.67 | 0.8 |
| Ubushushu obukhulu emoyeni | ℃ | 1500 | 1200 |
| Imodyuli ye-elastic | Gpa | 410 | 360 |
