Iindaba

Kutheni iindonga ezisecaleni zigoba ngexesha lokukrola okomileyo?
ngu admin on 24-12-03
Non-uniformity of ion bombardment Ukuchopha okomileyo kudla ngokuba yinkqubo edibanisa iziphumo zenyama kunye neekhemikhali, apho ibhobho ye-ion iyindlela ebalulekileyo yokuqinisa umzimba. Ngethuba lenkqubo ye-etching, i-angle yesiganeko kunye nokuhanjiswa kwamandla kwee-ion kunokungafani. Ukuba i-ion iyenzeka ...
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Intshayelelo kwiitekhnoloji ezintathu eziqhelekileyo zeCVD
ngu admin on 24-12-03
I-Chemical vapor deposition (CVD) yeyona teknoloji isetyenziswa kakhulu kwishishini le-semiconductor yokufaka izinto ezahlukeneyo, kubandakanywa uluhlu olubanzi lwezinto zokugquma, izixhobo ezininzi zetsimbi kunye nemathiriyeli yealloy yesinyithi. I-CVD yitekhnoloji yemveli yokulungiselela ifilimu. Iprinci yayo...
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Ngaba idayimani ingathatha indawo yezinye izixhobo zesemiconductor yamandla aphezulu?
ngu admin on 24-11-25
Njengelitye lembombo lezixhobo zombane zanamhlanje, izixhobo ze-semiconductor zenza utshintsho olungazange lubonwe ngaphambili. Namhlanje, idayimani ngokuthe ngcembe ibonisa amandla ayo amakhulu njengesixhobo se-semiconductor yesizukulwana sesine kunye neempawu zayo ezibalaseleyo zombane kunye ne-thermal kunye nozinzo phantsi koxinzelelo olugqithisileyo ...
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Yintoni indlela yokucwangcisa yeCMP?
ngu admin on 24-11-25
I-Dual-Damascene yitekhnoloji yenkqubo esetyenziselwa ukuvelisa i-metal interconnects kwiisekethe ezidibeneyo. Luphuhliso olongezelelweyo lwenkqubo yeDamasko. Ngokwenza ngokusebenzisa imingxuma kunye ne-grooves ngexesha elifanayo kwinqanaba lenkqubo efanayo kunye nokuzalisa ngesinyithi, ukuveliswa okuhlanganisiweyo kwem...
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Igraphite enokwaleka kwe-TaC
ngu admin on 24-11-21
I. Inkqubo yokuhlola iparamitha 1. Inkqubo ye-TaCl5-C3H6-H2-Ar 2. Ubushushu bokubekwa: Ngokwefomula ye-thermodynamic, kubalwa ukuba xa iqondo lobushushu lingaphezulu kwe-1273K, amandla asimahla e-Gibbs okusabela aphantsi kakhulu kwaye ukusabela kugqibelele. Isizathu...
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Inkqubo yokukhula kwekristale ye-silicon carbide kunye neteknoloji yezixhobo
ngu admin on 24-11-21
1. Indlela yeteknoloji ye-SiC ye-crystal yokukhula kwe-PVT (indlela ye-sublimation), i-HTCVD (i-CVD ephezulu yokushisa), i-LPE (indlela yesigaba solwelo) ziindlela ezintathu eziqhelekileyo zokukhula kwe-crystal ye-SiC; Eyona ndlela eyaziwayo kwishishini yindlela yePVT, kwaye ngaphezulu kwe-95% yeekristale zeSiC enye zikhuliswa yiPVT ...
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Ukulungiswa kunye nokuPhuculwa kokuSebenza kweePorous Silicon Carbon Composite Materials
ngu admin on 24-11-13
Iibhetri zeLithium-ion ziphuhliswa ikakhulu kwicala lokuxinana kwamandla aphezulu. Kwiqondo lobushushu begumbi, i-silicon-based negative electrode materials alloy kunye ne-lithium ukuvelisa i-lithium-rich product Li3.75Si isigaba, esinomthamo othile ukuya kuthi ga kwi-3572 mAh / g, ephezulu kakhulu kunethiyori...
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I-Thermal Oxidation yeSilicon yeCrystal enye
ngu admin on 24-11-13
Ukwenziwa kwesilicon dioxide kumphezulu wesilicon kubizwa ngokuba yi-oxidation, kunye nokudalwa kwesilicon dioxide ezinzileyo kunye nebambelela ngokuqinileyo kukhokelela ekuzalweni kwe-silicon edibeneyo yeteknoloji yeplani yesekethe. Nangona zininzi iindlela zokukhulisa isilicon dioxide ngqo kumphezulu we-silico...
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Ukwenziwa kweUV yeFan-Out Wafer-Level Packaging
ngu admin on 24-11-05
I-Fan out wafer level packaging (FOWLP) yindlela engabizi kakhulu kwishishini le-semiconductor. Kodwa iziphumo ebezingalindelekanga eziqhelekileyo zale nkqubo zi-warping kunye ne-chip offset. Ngaphandle kophuculo oluqhubekayo lwenqanaba le-wafer kunye nenqanaba lephaneli yetekhnoloji yefenitshala, le miba inxulumene nokubumba isaphuma...
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