I-GaN kwiSilicon Wafer yeRF

Inkcazelo emfutshane:

I-GaN kwi-Silicon Wafer ye-RF, ebonelelwa yi-VET Energy, yenzelwe ukuxhasa izicelo zerediyo ze-high-frequency radio frequency (RF). Ezi ziqwenga zidibanisa iingenelo ze-Gallium Nitride (GaN) kunye neSilicon (Si) ukuze zinike ukuhanjiswa kwe-thermal okugqwesileyo kunye nokusebenza kakuhle kwamandla aphezulu, zizenza zilungele amacandelo e-RF asetyenziswa kunxibelelwano lwe-telecommunications, radar, kunye nesathelayithi. I-VET Energy iqinisekisa ukuba iwafer nganye ihlangabezana neyona migangatho iphezulu yokusebenza efunekayo kukwenziwa kwe-semiconductor ephezulu.


Iinkcukacha zeMveliso

Iithegi zeMveliso

I-VET Energy GaN kwi-Silicon Wafer sisisombululo esisingqinisiso se-semiconductor esenzelwe ngokukodwa usetyenziso lwerediyo (RF). Ngokukhula kwe-epitaxially yekhwalithi ephezulu ye-gallium nitride (i-GaN) kwi-silicon substrate, i-VET Amandla inikezela ngexabiso elisebenzayo kunye neqonga eliphezulu lokusebenza kuluhlu olubanzi lwezixhobo ze-RF.

Le GaN kwiSilicon wafer iyahambelana nezinye izixhobo ezifana neSi Wafer, SiC Substrate, SOI Wafer, kunye neSiN Substrate, yandisa ukuguquguquka kwayo kwiinkqubo ezahlukeneyo zokwenziwa. Ukongeza, yenzelwe ukusetyenziswa nge-Epi Wafer kunye nezixhobo eziphambili ezifana ne-Gallium Oxide Ga2O3 kunye ne-AlN Wafer, ephucula ngakumbi usetyenziso lwayo kumbane onamandla aphezulu. Ii-wafers zenzelwe ukuhlanganiswa okungenamthungo kwiinkqubo zokuvelisa usebenzisa ukuphathwa kweCassette esemgangathweni ukwenzela ukuba kube lula ukusetyenziswa kunye nokunyusa ukusebenza kakuhle kwemveliso.

I-VET Energy inikezela ngepotfoliyo ebanzi yee-semiconductor substrates, kuquka i-Si Wafer, i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, i-Epi Wafer, i-Gallium Oxide Ga2O3, kunye ne-AlN Wafer. Umgca wethu weemveliso ezahlukeneyo ubonelela kwiimfuno zezicelo ezahlukeneyo ze-elektroniki, ukusuka kumbane we-elektroniki ukuya kwi-RF kunye ne-optoelectronics.

I-GaN kwiSilicon Wafer ibonelela ngeenzuzo ezininzi kwizicelo zeRF:

       • Ukusebenza kwefrikhwensi ephezulu:I-bandgap ebanzi ye-GaN kunye nokuhamba kwe-electron ephezulu kwenza ukuba i-high-frequency isebenze, iyenze ilungele i-5G kunye nezinye iinkqubo zonxibelelwano olukhawulezayo.
     • Uxinaniso lwamandla aphezulu:Izixhobo ze-GaN zinokuphatha uxinaniso lwamandla oluphezulu xa kuthelekiswa nezixhobo ze-silicon zemveli, ezikhokelela kwiinkqubo ezixineneyo nezisebenzayo zeRF.
       • Ukusetyenziswa kwamandla aphantsi:Izixhobo ze-GaN zibonakalisa ukusetyenziswa kwamandla aphantsi, okukhokelela ekuphuculeni ukusebenza kakuhle kwamandla kunye nokunciphisa ukuchithwa kobushushu.

Usetyenziso:

       • Unxibelelwano lwe-wireless lwe-5G:I-GaN kwii-wafers ze-Silicon zibalulekile ekwakheni izikhululo zesiseko ze-5G eziphezulu kunye nezixhobo eziphathwayo.
     • Iinkqubo zerada:I-GaN-based RF amplifiers isetyenziswa kwiinkqubo zeradar ngokusebenza kwazo okuphezulu kunye ne-bandwidth ebanzi.
   • Unxibelelwano ngesathelayithi:Izixhobo ze-GaN zenza ukuba amandla aphezulu kunye neenkqubo zonxibelelwano zesathelayithi eziphezulu.
     • Ii-elektroniki zomkhosi:Amacandelo e-RF asekwe kwi-GaN asetyenziswa kwizicelo zomkhosi njengemfazwe ye-elektroniki kunye neenkqubo zerada.

Amandla e-VET abonelela nge-GaN enokwenziwa ngokwezifiso kwii-Silicon wafers ukuhlangabezana neemfuno zakho ezithile, kubandakanya amanqanaba ahlukeneyo e-doping, ubukhulu, kunye nobukhulu be-wafer. Iqela lethu leengcali libonelela ngenkxaso yobugcisa kunye nenkonzo emva kokuthengisa ukuqinisekisa impumelelo yakho.

Umfanekiso we-6页-36
Umfanekiso we-6页-35

IINGCACISO ZOKWENZAKALELAYO

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into

8-intshi

6-Intshi

4-intshi

nP

n-Pm

n-Nd

SI

SI

TTV(GBIR)

≤6um

≤6um

I-Bow(GF3YFCD)-Ixabiso elipheleleyo

≤15μm

≤15μm

≤25μm

≤15μm

Warp(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

I-LTV(SBIR)-10mmx10mm

<2μm

Umda weWafer

Beveling

UBUPHAKAMBE GQIBELA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into

8-intshi

6-Intshi

4-intshi

nP

n-Pm

n-Nd

SI

SI

Umphezulu Gqiba

Icala eliphindwe kabini le-Optical Polish, iSi- Face CMP

Ubunzima boMphezulu

(10um x 10um) Si-FaceRa≤0.2nm
I-C-Face Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
I-C-Face Ra≤0.5nm

IiChips zoMda

Akukho okuvumelekileyo (ubude nobubanzi≥0.5mm)

Iindenti

Akukho Ivumelekileyo

Imikrwelo(Si-Face)

Ubuninzi.≤5,Yongezeleka
Ubude≤0.5×i-wafer diameter

Ubuninzi.≤5,Yongezeleka
Ubude≤0.5×i-wafer diameter

Ubuninzi.≤5,Yongezeleka
Ubude≤0.5×i-wafer diameter

Iintanda

Akukho Ivumelekileyo

Ukungabandakanywa kuMda

3mm

ubuchwephesha_1_2_ubungakanani
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