I-VET Energy GaN kwi-Silicon Wafer sisisombululo esisingqinisiso se-semiconductor esenzelwe ngokukodwa usetyenziso lwerediyo (RF). Ngokukhula kwe-epitaxially yekhwalithi ephezulu ye-gallium nitride (i-GaN) kwi-silicon substrate, i-VET Amandla inikezela ngexabiso elisebenzayo kunye neqonga eliphezulu lokusebenza kuluhlu olubanzi lwezixhobo ze-RF.
Le GaN kwiSilicon wafer iyahambelana nezinye izixhobo ezifana neSi Wafer, SiC Substrate, SOI Wafer, kunye neSiN Substrate, yandisa ukuguquguquka kwayo kwiinkqubo ezahlukeneyo zokwenziwa. Ukongeza, yenzelwe ukusetyenziswa nge-Epi Wafer kunye nezixhobo eziphambili ezifana ne-Gallium Oxide Ga2O3 kunye ne-AlN Wafer, ephucula ngakumbi usetyenziso lwayo kumbane onamandla aphezulu. Ii-wafers zenzelwe ukuhlanganiswa okungenamthungo kwiinkqubo zokuvelisa usebenzisa ukuphathwa kweCassette esemgangathweni ukwenzela ukuba kube lula ukusetyenziswa kunye nokunyusa ukusebenza kakuhle kwemveliso.
I-VET Energy inikezela ngepotfoliyo ebanzi yee-semiconductor substrates, kuquka i-Si Wafer, i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, i-Epi Wafer, i-Gallium Oxide Ga2O3, kunye ne-AlN Wafer. Umgca wethu weemveliso ezahlukeneyo ubonelela kwiimfuno zezicelo ezahlukeneyo ze-elektroniki, ukusuka kumbane we-elektroniki ukuya kwi-RF kunye ne-optoelectronics.
I-GaN kwiSilicon Wafer ibonelela ngeenzuzo ezininzi kwizicelo zeRF:
• Ukusebenza kwefrikhwensi ephezulu:I-bandgap ebanzi ye-GaN kunye nokuhamba kwe-electron ephezulu kwenza ukuba i-high-frequency isebenze, iyenze ilungele i-5G kunye nezinye iinkqubo zonxibelelwano olukhawulezayo.
• Uxinaniso lwamandla aphezulu:Izixhobo ze-GaN zinokuphatha uxinaniso lwamandla oluphezulu xa kuthelekiswa nezixhobo ze-silicon zemveli, ezikhokelela kwiinkqubo ezixineneyo nezisebenzayo zeRF.
• Ukusetyenziswa kwamandla aphantsi:Izixhobo ze-GaN zibonakalisa ukusetyenziswa kwamandla aphantsi, okukhokelela ekuphuculeni ukusebenza kakuhle kwamandla kunye nokunciphisa ukuchithwa kobushushu.
Usetyenziso:
• Unxibelelwano lwe-wireless lwe-5G:I-GaN kwii-wafers ze-Silicon zibalulekile ekwakheni izikhululo zesiseko ze-5G eziphezulu kunye nezixhobo eziphathwayo.
• Iinkqubo zerada:I-GaN-based RF amplifiers isetyenziswa kwiinkqubo zeradar ngokusebenza kwazo okuphezulu kunye ne-bandwidth ebanzi.
• Unxibelelwano ngesathelayithi:Izixhobo ze-GaN zenza ukuba amandla aphezulu kunye neenkqubo zonxibelelwano zesathelayithi eziphezulu.
• Ii-elektroniki zomkhosi:Amacandelo e-RF asekwe kwi-GaN asetyenziswa kwizicelo zomkhosi njengemfazwe ye-elektroniki kunye neenkqubo zerada.
Amandla e-VET abonelela nge-GaN enokwenziwa ngokwezifiso kwii-Silicon wafers ukuhlangabezana neemfuno zakho ezithile, kubandakanya amanqanaba ahlukeneyo e-doping, ubukhulu, kunye nobukhulu be-wafer. Iqela lethu leengcali libonelela ngenkxaso yobugcisa kunye nenkonzo emva kokuthengisa ukuqinisekisa impumelelo yakho.
IINGCACISO ZOKWENZAKALELAYO
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation
Into | 8-intshi | 6-Intshi | 4-intshi | ||
nP | n-Pm | n-Nd | SI | SI | |
TTV(GBIR) | ≤6um | ≤6um | |||
I-Bow(GF3YFCD)-Ixabiso elipheleleyo | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
I-LTV(SBIR)-10mmx10mm | <2μm | ||||
Umda weWafer | Beveling |
UBUPHAKAMBE GQIBELA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation
Into | 8-intshi | 6-Intshi | 4-intshi | ||
nP | n-Pm | n-Nd | SI | SI | |
Umphezulu Gqiba | Icala eliphindwe kabini le-Optical Polish, iSi- Face CMP | ||||
Ubunzima boMphezulu | (10um x 10um) Si-FaceRa≤0.2nm | (5umx5um) Si-Face Ra≤0.2nm | |||
IiChips zoMda | Akukho okuvumelekileyo (ubude nobubanzi≥0.5mm) | ||||
Iindenti | Akukho Ivumelekileyo | ||||
Imikrwelo(Si-Face) | Ubuninzi.≤5,Yongezeleka | Ubuninzi.≤5,Yongezeleka | Ubuninzi.≤5,Yongezeleka | ||
Iintanda | Akukho Ivumelekileyo | ||||
Ukungabandakanywa kuMda | 3mm |