I-intshi ye-12 ye-Silicon Wafer ye-Semiconductor Fabrication enikezelwa yi-VET Energy yenzelwe ukuhlangabezana nemigangatho echanekileyo efunekayo kwishishini le-semiconductor. Njengenye yeemveliso ezikhokelayo kuluhlu lwethu, i-VET Energy iqinisekisa ukuba ezi ziqwenga ziveliswa ngokucokisekileyo, ukucoceka, kunye nomgangatho womphezulu, okwenza zibe zilungele ukusetyenziswa kwezicelo ze-semiconductor, kuquka i-microchips, i-sensors, kunye nezixhobo zombane eziphambili.
Esi siqwengana sihambelana noluhlu olubanzi lwezixhobo ezifana neSi Wafer, iSiC Substrate, i-SOI Wafer, iSiN Substrate, kunye ne-Epi Wafer, ebonelela ngokuguquguquka okugqwesileyo kwiinkqubo ezahlukeneyo zokwenziwa. Ukongeza, ihambelana kakuhle nobuchwepheshe obuphambili njengeGallium Oxide Ga2O3 kunye ne-AlN Wafer, iqinisekisa ukuba inokudityaniswa kwizicelo ezikhethekileyo. Ukusebenza kakuhle, i-wafer ilungiselelwe ukusetyenziswa kunye neenkqubo zeCassette ezisemgangathweni, ukuqinisekisa ukuphathwa ngokufanelekileyo kwimveliso ye-semiconductor.
Umgca wemveliso we-VET Energy awuphelelanga kwii-silicon wafers. Sikwabonelela ngoluhlu olubanzi lwezixhobo ze-semiconductor substrate, kubandakanya i-SiC Substrate, i-SOI Wafer, iSiN Substrate, i-Epi Wafer, njl. Ezi mveliso zinokuhlangabezana neemfuno zesicelo zabathengi abahlukeneyo kumandla ombane, amaza omoya, abenzi boluvo kunye namanye amacandelo.
Iindawo zesicelo:
•Iitshiphusi ezinengqondo:Ukwenziwa kweetshiphusi ezinengqiqo ezisebenza kakhulu ezifana ne-CPU kunye ne-GPU.
•Iitshiphusi zememori:Ukwenziwa kweetshiphusi zememori ezifana ne-DRAM kunye ne-NAND Flash.
•Iitshiphusi zeAnalog:Ukwenziwa kweetshiphusi ze-analog ezifana ne-ADC kunye ne-DAC.
•Iinzwa:Abenzi boluvo be-MEMS, abenzi boluvo bomfanekiso, njl.
I-VET Amandla ibonelela abathengi ngezisombululo ze-wafer ezilungiselelweyo, kwaye zinokwenza ngokwezifiso ii-wafers ezinokumelana neentlobo ezahlukeneyo, umxholo we-oksijini owahlukileyo, ubukhulu obahlukileyo kunye nezinye iinkcukacha ngokweemfuno ezithile zabathengi. Ukongeza, sikwabonelela ngenkxaso yobuchwephesha kunye nenkonzo emva kokuthengisa ukunceda abathengi baphucule iinkqubo zokuvelisa kunye nokuphucula imveliso yemveliso.
IINGCACISO ZOKUXHAPHAZA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation
Into | 8-intshi | 6-Intshi | 4-intshi | ||
nP | n-Pm | n-Nd | SI | SI | |
TTV(GBIR) | ≤6um | ≤6um | |||
I-Bow(GF3YFCD)-Ixabiso elipheleleyo | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
I-LTV(SBIR)-10mmx10mm | <2μm | ||||
Wafer Edge | Beveling |
UBUPHAKAMBE GQIBELA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation
Into | 8-intshi | 6-Intshi | 4-intshi | ||
nP | n-Pm | n-Nd | SI | SI | |
Umphezulu Gqiba | Icala eliphindwe kabini le-Optical Polish, iSi- Face CMP | ||||
Ubunzima boMphezulu | (10um x 10um) Si-FaceRa≤0.2nm | (5umx5um) Si-Face Ra≤0.2nm | |||
IiChips zoMda | Akukho okuvunyelweyo (ubude nobubanzi≥0.5mm) | ||||
Iindenti | Akukho Ivumelekileyo | ||||
Imikrwelo(Si-Face) | Ubuninzi.≤5,Yongezeleka | Ubuninzi.≤5,Yongezeleka | Ubuninzi.≤5,Yongezeleka | ||
Iintanda | Akukho Ivumelekileyo | ||||
Ukungabandakanywa kuMda | 3mm |