I-intshi ye-12 ye-Silicon Wafer ye-Semiconductor Fabrication

Inkcazelo emfutshane:

I-VET Energy i-12-intshi ye-silicon wafers zezona zinto zingundoqo kushishino lokwenziwa kwe-semiconductor. Amandla e-VET asebenzisa itekhnoloji yokukhula ephucukileyo ye-CZ ukuqinisekisa ukuba ii-wafers zinomgangatho ogqwesileyo wekristale, ingxinano ephantsi yesiphene kunye nokufana okuphezulu, ukubonelela nge-substrate eqinileyo nethembekileyo yezixhobo zakho ze-semiconductor.


Iinkcukacha zeMveliso

Iithegi zeMveliso

I-intshi ye-12 ye-Silicon Wafer ye-Semiconductor Fabrication enikezelwa yi-VET Energy yenzelwe ukuhlangabezana nemigangatho echanekileyo efunekayo kwishishini le-semiconductor. Njengenye yeemveliso ezikhokelayo kuluhlu lwethu, i-VET Energy iqinisekisa ukuba ezi ziqwenga ziveliswa ngokucokisekileyo, ukucoceka, kunye nomgangatho womphezulu, okwenza zibe zilungele ukusetyenziswa kwezicelo ze-semiconductor, kuquka i-microchips, i-sensors, kunye nezixhobo zombane eziphambili.

Esi siqwengana sihambelana noluhlu olubanzi lwezixhobo ezifana neSi Wafer, iSiC Substrate, i-SOI Wafer, iSiN Substrate, kunye ne-Epi Wafer, ebonelela ngokuguquguquka okugqwesileyo kwiinkqubo ezahlukeneyo zokwenziwa. Ukongeza, ihambelana kakuhle nobuchwepheshe obuphambili njengeGallium Oxide Ga2O3 kunye ne-AlN Wafer, iqinisekisa ukuba inokudityaniswa kwizicelo ezikhethekileyo. Ukusebenza kakuhle, i-wafer ilungiselelwe ukusetyenziswa kunye neenkqubo zeCassette ezisemgangathweni, ukuqinisekisa ukuphathwa ngokufanelekileyo kwimveliso ye-semiconductor.

Umgca wemveliso we-VET Energy awuphelelanga kwii-silicon wafers. Sikwabonelela ngoluhlu olubanzi lwezixhobo ze-semiconductor substrate, kubandakanya i-SiC Substrate, i-SOI Wafer, iSiN Substrate, i-Epi Wafer, njl. Ezi mveliso zinokuhlangabezana neemfuno zesicelo zabathengi abahlukeneyo kumandla ombane, amaza omoya, abenzi boluvo kunye namanye amacandelo.

Iindawo zesicelo:
Iitshiphusi ezinengqondo:Ukwenziwa kweetshiphusi ezinengqiqo ezisebenza kakhulu ezifana ne-CPU kunye ne-GPU.
Iitshiphusi zememori:Ukwenziwa kweetshiphusi zememori ezifana ne-DRAM kunye ne-NAND Flash.
Iitshiphusi zeAnalog:Ukwenziwa kweetshiphusi ze-analog ezifana ne-ADC kunye ne-DAC.
Iinzwa:Abenzi boluvo be-MEMS, abenzi boluvo bomfanekiso, njl.

I-VET Amandla ibonelela abathengi ngezisombululo ze-wafer ezilungiselelweyo, kwaye zinokwenza ngokwezifiso ii-wafers ezinokumelana neentlobo ezahlukeneyo, umxholo we-oksijini owahlukileyo, ubukhulu obahlukileyo kunye nezinye iinkcukacha ngokweemfuno ezithile zabathengi. Ukongeza, sikwabonelela ngenkxaso yobuchwephesha kunye nenkonzo emva kokuthengisa ukunceda abathengi baphucule iinkqubo zokuvelisa kunye nokuphucula imveliso yemveliso.

Umfanekiso we-6页-36
6页-35

IINGCACISO ZOKUXHAPHAZA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into

8-intshi

6-Intshi

4-intshi

nP

n-Pm

n-Nd

SI

SI

TTV(GBIR)

≤6um

≤6um

I-Bow(GF3YFCD)-Ixabiso elipheleleyo

≤15μm

≤15μm

≤25μm

≤15μm

Warp(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

I-LTV(SBIR)-10mmx10mm

<2μm

Wafer Edge

Beveling

UBUPHAKAMBE GQIBELA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into

8-intshi

6-Intshi

4-intshi

nP

n-Pm

n-Nd

SI

SI

Umphezulu Gqiba

Icala eliphindwe kabini le-Optical Polish, iSi- Face CMP

Ubunzima boMphezulu

(10um x 10um) Si-FaceRa≤0.2nm
I-C-Face Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
I-C-Face Ra≤0.5nm

IiChips zoMda

Akukho okuvunyelweyo (ubude nobubanzi≥0.5mm)

Iindenti

Akukho Ivumelekileyo

Imikrwelo(Si-Face)

Ubuninzi.≤5,Yongezeleka
Ubude≤0.5×i-wafer diameter

Ubuninzi.≤5,Yongezeleka
Ubude≤0.5×i-wafer diameter

Ubuninzi.≤5,Yongezeleka
Ubude≤0.5×i-wafer diameter

Iintanda

Akukho Ivumelekileyo

Ukungabandakanywa kuMda

3mm

ubuchwephesha_1_2_ubungakanani
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