6 Intshi Semi Insulating SiC Wafer

Inkcazelo emfutshane:

I-VET Energy 6 intshi ye-semi-insulating silicon carbide (i-SiC) yi-wafer yomgangatho ophezulu we-substrate efanelekileyo kuluhlu olubanzi lwezicelo ze-elektroniki zamandla. Amandla e-VET asebenzisa iindlela zokukhula ezikumgangatho ophezulu ukuvelisa ii-wafers ze-SiC ezinomgangatho okhethekileyo wekristale, ingxinano ephantsi yesiphene, kunye nokumelana okuphezulu.


Iinkcukacha zeMveliso

Iithegi zeMveliso

I-6 Intshi ye-Semi Insulating SiC Wafer evela kwi-VET Energy sisisombululo esiphezulu samandla aphezulu kunye nezicelo eziphezulu ze-frequency, ezinikezela nge-conductivity ephezulu ye-thermal kunye nokufakelwa kombane. Ezi ziphako zi-semi-insulating zibalulekile kuphuhliso lwezixhobo ezifana ne-RF amplifiers, iiswitshi zamandla, kunye nezinye izinto ezinombane ophezulu. Amandla e-VET aqinisekisa umgangatho kunye nokusebenza okungaguqukiyo, okwenza ezi ziqwenga zilungele uluhlu olubanzi lweenkqubo zokwenziwa kwe-semiconductor.

Ukongeza kwiipropathi zabo ezibalaseleyo zokugquma, ezi ziqwenga ze-SiC ziyahambelana nezixhobo ezahlukeneyo ezibandakanya iSi Wafer, iSiC Substrate, i-SOI Wafer, iSiN Substrate, kunye ne-Epi Wafer, izenza ziguquguquke kwiintlobo ezahlukeneyo zenkqubo yokwenziwa. Ngaphezu koko, izixhobo eziphucukileyo ezifana ne-Gallium Oxide Ga2O3 kunye ne-AlN Wafer zingasetyenziswa ngokudityaniswa nezi ziphaluka ze-SiC, zibonelela nokuguquguquka okukhulu ngakumbi kwizixhobo zombane ezinamandla aphezulu. Iiwafers ziyilelwe ukuhlanganiswa okungenamthungo kunye neenkqubo zokuphatha ezisemgangathweni ezifana neenkqubo zeCassette, eziqinisekisa ukusetyenziswa ngokulula kwimimiselo yokuvelisa ubuninzi.

I-VET Energy inikezela ngepotfoliyo ebanzi yee-semiconductor substrates, kuquka i-Si Wafer, i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, i-Epi Wafer, i-Gallium Oxide Ga2O3, kunye ne-AlN Wafer. Umgca wethu weemveliso ezahlukeneyo ubonelela kwiimfuno zezicelo ezahlukeneyo ze-elektroniki, ukusuka kumbane wombane ukuya kwiRF kunye ne-optoelectronics.

I-6 intshi ye-semi-insulating ye-SiC wafer ibonelela ngeenzuzo ezininzi:
Amandla ombane aphezulu wokuqhekeka: I-bandgap ebanzi ye-SiC yenza amandla ombane aphezulu, okuvumela izixhobo zamandla ezixineneyo nezisebenzayo.
Ukusebenza kobushushu obuphezulu: I-SiC ye-thermal conductivity egqwesileyo yenza ukusebenza kumaqondo obushushu aphezulu, ukuphucula ukuthembeka kwesixhobo.
Ukumelana okuphantsi: Izixhobo ze-SiC zibonisa ukuxhathisa okuphantsi, ukunciphisa ilahleko yamandla kunye nokuphucula ukusebenza kakuhle kwamandla.

I-VET Amandla ibonelela ngeewafers zeSiC ezinokwenziwa ngokwezifiso ukuze zihlangabezane neemfuno zakho ezithile, kubandakanya ubukhulu obahlukeneyo, amanqanaba e-doping, kunye nokugqitywa komphezulu. Iqela lethu leengcali libonelela ngenkxaso yobugcisa kunye nenkonzo emva kokuthengisa ukuqinisekisa impumelelo yakho.

Umfanekiso we-6页-36
6页-35

IINGCACISO ZOKUXHAPHAZA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into

8-intshi

6-Intshi

4-intshi

nP

n-Pm

n-Nd

SI

SI

TTV(GBIR)

≤6um

≤6um

I-Bow(GF3YFCD)-Ixabiso elipheleleyo

≤15μm

≤15μm

≤25μm

≤15μm

Warp(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

I-LTV(SBIR)-10mmx10mm

<2μm

Wafer Edge

Beveling

UBUPHAKAMBE GQIBELA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into

8-intshi

6-Intshi

4-intshi

nP

n-Pm

n-Nd

SI

SI

Umphezulu Gqiba

Icala eliphindwe kabini le-Optical Polish, iSi- Face CMP

Ubunzima boMphezulu

(10um x 10um) Si-FaceRa≤0.2nm
I-C-Face Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
I-C-Face Ra≤0.5nm

IiChips zoMda

Akukho okuvunyelweyo (ubude nobubanzi≥0.5mm)

Iindenti

Akukho Ivumelekileyo

Imikrwelo(Si-Face)

Ubuninzi.≤5,Yongezeleka
Ubude≤0.5×i-wafer diameter

Ubuninzi.≤5,Yongezeleka
Ubude≤0.5×i-wafer diameter

Ubuninzi.≤5,Yongezeleka
Ubude≤0.5×i-wafer diameter

Iintanda

Akukho Ivumelekileyo

Ukungabandakanywa kuMda

3mm

ubuchwephesha_1_2_ubungakanani
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