i-vet-china iqinisekisa ukuba yonke iDurableISilicon Carbide Wafer Handing Paddleinokusebenza okugqwesileyo kunye nokuqina. Le silicon carbide wafer handling paddle isebenzisa iinkqubo zokwenziwa eziphambili zokuqinisekisa ukuba uzinzo kunye nokusebenza kwayo kuhlala kubushushu obuphezulu kunye nemo engqongileyo yokubola kweekhemikhali. Olu luyilo lubonelela ngenkxaso egqwesileyo yokuphatha i-wafer ye-semiconductor, ngakumbi kwimisebenzi echanekileyo ephezulu ezenzekelayo.
ISiC Cantilever Paddlelicandelo elikhethekileyo elisetyenziswa kwizixhobo zokuvelisa i-semiconductor ezifana ne-oxidation furnace, i-diffusion furnace, kunye nesithando somlilo, eyona nto isetyenziswayo kukulayishwa kwe-wafer kunye nokukhulula, ukuxhasa kunye nokuthutha ama-wafers ngexesha leenkqubo zokushisa okuphezulu.
Izakhiwo eziqhelekileyoyeSiCcantileverpukongeza: isakhiwo se-cantilever, esisisigxina kwelinye icala kwaye sikhululekile kwelinye, ngokuqhelekileyo sinoyilo olucaba kunye ne-paddle-like.
UkusebenzaprincipleyeSiCcantileverpukongeza:
I-paddle cantilever ingahamba inyuka kwaye ihle okanye ibuye iphinde ibuye ngaphakathi kwegumbi lesithando somlilo, ingasetyenziselwa ukuhambisa ama-wafers ukusuka kwiindawo zokulayishwa ukuya kwiindawo zokulungisa, okanye ngaphandle kweendawo zokucubungula, ezixhasayo kunye nokuzinzisa ama-wafers ngexesha lokushisa okuphezulu.
Iimpawu ezibonakalayo zeRecrystallized Silicon Carbide | |
Ipropati | Ixabiso eliqhelekileyo |
Ubushushu bokusebenza (°C) | 1600°C (neoksijini), 1700°C (ukunciphisa okusingqongileyo) |
Umxholo weSiC | > 99.96% |
Isiqulatho sasimahla Si | < 0.1% |
Unizi lolwapho kuyiwa khona | 2.60-2.70 g / cm3 |
I-porosity ebonakalayo | < 16% |
Amandla oxinzelelo | > 600 MPa |
Amandla okugoba okubandayo | 80-90 MPa (20°C) |
Amandla okugoba ashushu | 90-100 MPa (1400°C) |
Ukwandiswa kweThermal @1500°C | 4.70 10-6/°C |
I-Thermal conductivity @1200°C | 23 W/m•K |
Imodyuli ye-elastic | 240 GPA |
Ukuxhathisa ukothuka kwe-Thermal | Ulunge kakhulu |