Vet-ChinaI-Silicon Carbide CeramicUkwaleka lukhuselo olukumgangatho ophezulu owenziwe ngobunzima obugqithileyo kwaye obungagugiyoi-silicon carbide (SiC)izinto eziphathekayo, ezibonelela ngokugqwesileyo ukuxhathisa imichiza kunye nozinzo oluphezulu lobushushu. Ezi mpawu zibalulekile kwimveliso ye-semiconductor, ngokoI-Silicon Carbide yeCeramic Coatingisetyenziswa ngokubanzi kumacandelo aphambili ezixhobo zokwenziwa kwe-semiconductor.
Indima ethile yeVet-ChinaI-Silicon Carbide CeramicUkwaleka kwimveliso ye-semiconductor ngolu hlobo lulandelayo:
Ukomeleza ukuqina kwesixhobo:I-Silicon Carbide Ceramic Coating ye-Silicon Carbide Ceramic Coating ibonelela ngokhuseleko olubalaseleyo lomphezulu wezixhobo zokwenziwa kwe-semiconductor ezinobunzima obuphezulu kakhulu kunye nokumelana nokunxiba. Ngokukodwa kwiindawo ezinobushushu obuphezulu kunye nenkqubo eyingozi kakhulu, efana ne-chemical vapor deposition (CVD) kunye ne-plasma etching, i-coating inokuthintela ngokufanelekileyo umphezulu wesixhobo ukuba ungonakaliswe kukukhukuliseka kweekhemikhali okanye ukunxitywa komzimba, ngaloo ndlela ukwandisa kakhulu ubomi benkonzo. izixhobo kunye nokunciphisa ixesha lokuphumla okubangelwa kukutshintshwa rhoqo kunye nokulungiswa.
Phucula inkqubo yococeko:Kwinkqubo yokuvelisa i-semiconductor, ungcoliseko oluncinci lunokubangela iziphene zemveliso. I-inertness yekhemikhali ye-Silicon Carbide Ceramic Coating ivumela ukuba ihlale izinzile phantsi kweemeko ezinzima, ukukhusela izinto eziphathekayo ekukhupheni amaqhekeza okanye ukungcola, ngaloo ndlela iqinisekisa ukucoceka kokusingqongileyo kwenkqubo. Oku kubaluleke kakhulu kumanyathelo okuvelisa afuna ukuchaneka okuphezulu kunye nokucoceka okuphezulu, njenge-PECVD kunye nokufakelwa kwe-ion.
Lungisa ulawulo lobushushu:Kwi-high-temperature semiconductor processing, njenge-repeed thermal processing (RTP) kunye neenkqubo ze-oxidation, i-conductivity ephezulu ye-thermal ye-Silicon Carbide Ceramic Coating yenza ukuhanjiswa kweqondo lokushisa okufanayo ngaphakathi kwesixhobo. Oku kunceda ukunciphisa uxinzelelo lwe-thermal kunye nokuguqulwa kwezinto ezibangelwa ukuguquguquka kweqondo lokushisa, ngaloo ndlela kuphuculwe ukuchaneka kokuveliswa kwemveliso kunye nokuhambelana.
Xhasa inkqubo engqongileyo enzima:Kwiinkqubo ezifuna ukulawulwa kwe-atmospheric enzima, njenge-ICP etching kunye ne-PSS etching systems, ukuzinza kunye nokumelana ne-oxidation ye-Silicon Carbide Ceramic Coating iqinisekisa ukuba izixhobo zigcina ukusebenza okuzinzileyo ekusebenzeni kwexesha elide, ukunciphisa umngcipheko wokuthotywa kwezinto okanye umonakalo wezixhobo ngenxa. kutshintsho lwemo engqongileyo.
CVD SiC薄膜基本物理性能 Iimpawu ezisisiseko ze-CVD SiCukutyabeka | |
性质 / Ipropati | 典型数值 / Ixabiso eliqhelekileyo |
晶体结构 / Ulwakhiwo lweCrystal | FCC isigaba β多晶,主要為(111)取向 |
密度 / Ubuninzi | 3.21 g/cm³ |
硬度 / Ukuqina | 2500 维氏硬度 (500g umthwalo) |
晶粒大小 / Ukhozo SiZe | 2 ~ 10μm |
纯度 / Ukucoceka kwemichiza | 99.99995% |
热容 / Umthamo wobushushu | 640 J·kg-1·K-1 |
升华温度 / Iqondo lobushushu elisezantsi | 2700℃ |
抗弯强度 / Amandla e-Flexural | 415 MPa RT 4-inqaku |
杨氏模量 / Imodyuli yabaselula | 430 Gpa 4pt bend, 1300℃ |
导热系数 / ThermalUkuqhuba | 300Wm-1·K-1 |
热膨胀系数 / Ukwandiswa kweThermal(CTE) | 4.5×10-6K-1 |
Wamkelekile ngokufudumeleyo ukuba undwendwele umzi-mveliso wethu, makhe sibenengxoxo eyongezelelekileyo!