I-Silicon Carbide Coated Carrier Tray enganyangeki ekutyeni

Inkcazelo emfutshane:

I-VET Energy Silicon Carbide Coated Carrier Tray yimveliso ephezulu yokusebenza eyenzelwe ukubonelela ngokusebenza okungaguqukiyo nokuthembekileyo ngexesha elongeziweyo. Inokumelana nobushushu obuhle kakhulu kunye nokufana kwe-thermal, ukucoceka okuphezulu, ukuxhathisa ukhukuliseko, kuyenza ibe sisisombululo esifanelekileyo sokusetyenzwa kwe-wafer.

 

 

 


Iinkcukacha zeMveliso

Iithegi zeMveliso

SiC-inductors1
SiC-inductors2

I-Silicon carbide carrier trayis a isitshixoicandelo elisetyenziswa kwiinkqubo ezahlukeneyo zokwenziwa kwe-semiconductor.Sisebenzisa itekhnoloji yethu enelungelo elilodwa lomenzi wechiza ukwenza i-silicon carbide carrier ngayoubunyulu obuphezulu kakhulu,kulungileukutyabekaukufanakunye nobomi benkonzo obugqwesileyo, njengoukumelana neekhemikhali eziphezulu kunye neempawu zokuzinza kwe-thermal.

Amandla eVET yi iumenzi wokwenyani weemveliso ezenziwe ngokwezifiso zegraphite kunye nesilicon carbide ene-CVD coating,inokubonelelaezahlukeneyoiindawo ezilungiselelwe i-semiconductor kunye ne-photovoltaic industry. OIqela le-ur lobuchwephesha livela kumaziko aphezulu ophando lwasekhaya, linokubonelela ngezisombululo zemathiriyeli yobuchwepheshayeyakho.

Siqhubeka siphuhlisa iinkqubo eziphambili ukubonelela ngemathiriyeli ephezulu kakhulu,kwayebaye benza iteknoloji ekhethekileyo yelungelo elilodwa lomenzi wechiza, enokwenza iqhina phakathi kwengubo kunye ne-substrate ibe ngqongqo kwaye ingabikho lula kwi-detachment.

Fukutya kweemveliso zethu:

1. Ukumelana nobushushu obuphezulu be-oxidation ukuya kuthi ga kwi-1700.
2. Ukucoceka okuphezulu kunyeukufana kwe-thermal
3. Ukumelana nokugqwesa okugqwesileyo: i-asidi, i-alkali, ityuwa kunye ne-organic reagents.
4. Ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.
5. Ubomi benkonzo ende kwaye buhlala ixesha elide

CVD SiC薄膜基本物理性能

Iimpawu ezisisiseko ze-CVD SiCukutyabeka

性质 / Ipropati

典型数值 / Ixabiso eliqhelekileyo

晶体结构 / Ulwakhiwo lweCrystal

iFCC β isigaba多晶,主要為(111)取向

密度 / Ubuninzi

3.21 g/cm³

硬度 / Ukuqina

2500 维氏硬度 (500g umthwalo)

晶粒大小 / Iinkozo uSiZe

2 ~ 10μm

纯度 / Ukucoceka kwemichiza

99.99995%

热容 / Umthamo wobushushu

640 J·kg-1·K-1

升华温度 / Iqondo lobushushu elisezantsi

2700℃

抗弯强度 / Amandla e-Flexural

415 MPa RT 4-point

杨氏模量 / Imodyuli yabaselula

430 Gpa 4pt bend, 1300℃

导热系数 / ThermalUkuqhuba

300Wm-1·K-1

热膨胀系数 / Ukwandiswa kweThermal(CTE)

4.5×10-6K-1

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Wamkelekile ngokufudumeleyo ukuba undwendwele umzi-mveliso wethu, makhe sibenengxoxo eyongezelelekileyo!

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